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Carrier Induced Effects of Quantum Well Structure and its Application to Optical Modulators and Optical Switches

  • H. Sakaki
  • H. Yoshimura
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

Recently there has been a considerable interest in optical properties of semiconductor quantum well (QW) structures under electric fields [1-3]. So far field induced changes in absorption [1] and refraction index [3] spectra have been examined mainly for QWs placed inside of reverse biased p-n or Schottky junctions, where carriers are nearly absent. Various applications of this quantum confined Stark effect (QCSE) have been already reported [2].

Keywords

Quantum Well Field Effect Transistor Refractive Index Change Exciton Peak Photoluminescence Excitation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • H. Sakaki
    • 1
  • H. Yoshimura
    • 1
  1. 1.Institute of Industrial ScienceUniversity of TokyoMinato-ku, Tokyo 106Japan

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