Carrier Induced Effects of Quantum Well Structure and its Application to Optical Modulators and Optical Switches
Recently there has been a considerable interest in optical properties of semiconductor quantum well (QW) structures under electric fields [1-3]. So far field induced changes in absorption  and refraction index  spectra have been examined mainly for QWs placed inside of reverse biased p-n or Schottky junctions, where carriers are nearly absent. Various applications of this quantum confined Stark effect (QCSE) have been already reported .
KeywordsQuantum Well Field Effect Transistor Refractive Index Change Exciton Peak Photoluminescence Excitation
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