Carrier Induced Effects of Quantum Well Structure and its Application to Optical Modulators and Optical Switches

  • H. Sakaki
  • H. Yoshimura
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

Recently there has been a considerable interest in optical properties of semiconductor quantum well (QW) structures under electric fields [1-3]. So far field induced changes in absorption [1] and refraction index [3] spectra have been examined mainly for QWs placed inside of reverse biased p-n or Schottky junctions, where carriers are nearly absent. Various applications of this quantum confined Stark effect (QCSE) have been already reported [2].

Keywords

Recombination GaAs Refraction 

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • H. Sakaki
    • 1
  • H. Yoshimura
    • 1
  1. 1.Institute of Industrial ScienceUniversity of TokyoMinato-ku, Tokyo 106Japan

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