Excitons in II-VI Compound Semiconductor Superlattices: A Range of Possibilities with ZnSe Based Heterostructures
In a recently short time, less than four years, application of advanced epitaxial methods have yielded a number of semiconductor artificial microstructures which are based on II-VI compound semiconductors. Excluding here the Hg-based narrow gap materials, among the wide gap II-VI’s the basic building blocks are CdTe, ZnSe, ZnTe, ZnS and related alloys. One of the technological motivations behind these materials is their potential in light emitting and electro-optical switching applications in the visible, especially the blue portion of the spectrum.
KeywordsZeeman Splitting Multiple Quantum Well High Energy Peak ZnTe Layer Exciton Lifetime
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