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Nonlinearities, Coherence and Dephasing in Layered GaSe and in CdSe Surface Layer

  • Jørn M. Hvam
  • Claus Dörnfeld
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

The fundamental requirement for useful optical switching devices, fast switching at low power, is not easily achieved. Low switching powers, can be obtained by making use of the strong enhancement of the nonlinear optical coefficients near electronic resonances. On the other hand, the creation of real excitations in the material tends to limit the response time to the lifetime of the electronic excitations. For direct gap semiconductors, carrier lifetimes are in the nanosecond or subnanosecond range, which is not satifactory for extensive use in all optical switching devices.1

Keywords

Nonlinear Signal Nonlinear Optical Response Exciton Resonance Exciton Density Indirect Exciton 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Jørn M. Hvam
    • 1
  • Claus Dörnfeld
    • 2
  1. 1.Fysisk InstitutOdense UniversitetOdense MDenmark
  2. 2.Fachbereich PhysikUniversität KaiserslauternKaiserslauternFR-Germany

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