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Luminescence of GaAs/A1 GaAs MQW Structures under Picosecond and Nanosecond Excitation

  • L. Angeloni
  • A. Chiari
  • M. Collocci
  • F. Fermi
  • M. Gurioli
  • R. Querzoli
  • A. Vinattieri
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

The optical and transport properties of the quasi-two-dimensional electronic system in quantum well structures (QWS) have been extensively investigated in the last years not only because of their importance in basic semiconductor physics but also for their possible application as optoelectronic devices.

Keywords

Emission Energy Quantum Well Structure GaAs Buffer Layer High Energy Tail Solid State Comm 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • L. Angeloni
    • 1
  • A. Chiari
    • 1
  • M. Collocci
    • 2
  • F. Fermi
    • 3
  • M. Gurioli
    • 2
  • R. Querzoli
    • 2
  • A. Vinattieri
    • 2
  1. 1.Laboratorio di Spettroscopia Molecolare Dipartimento di ChimicaUniversita degli Studi di FirenzeFirenzeItaly
  2. 2.Dipartimento di FisicaUniversita degli Studi di ParmaParmaItaly
  3. 3.Dipartimento di FisicaUniversita degli Studi di FirenzeFirenzeItaly

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