Analysis and Design of High-Power Rectifiers

  • M. S. Adler
  • V. A. K. Temple
Part of the Earlier Brown Boveri Symposia book series (EBBS)


In this paper all aspects of the design and analysis of high-power rectifiers are pre­sented. In the first section, the results of a study are given which identify the limit­ing physical mechanisms affecting forward drop in power rectifiers. In the second sec­tion, the effect of packaging variations on surge and steady-state device ratings is investigated. In the third section, the effect that gold, platinum, and electron irradia­tion have on the switching speed, forward drop and “snappiness” of power rectifiers is analyzed using a method to directly measure the free-carrier concentration while the device is switching. Device analysis, wherever presented, is made using an exact numerical model in one dimension which allows for temperature- and time-dependent cal­culations on devices imbedded in inductive switching circuits.


Power Dissipation Carrier Lifetime Surface Recombination Peak Current Density Auger Recombination 
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  1. 1.
    M.S. Adler, “Accurate Calculations of the Forward Drop of Power Rectifiers and Thyristors,” IEEE Trans. Electron Devices, ED-25, (January 1978) 16–22.CrossRefGoogle Scholar
  2. 2.
    N.G. Nilsson and K.G. Svantesson, “The Spectrum and Decay of the Recombination Radiation from Strongly Excited Silicon,” Solid State Commun., 9 (1972) 155–159.CrossRefGoogle Scholar
  3. 3.
    J.W. Slotboom and H.D. DeGraaff, “Measurements of Bandgap Narrowing in Si Bipolar Transistors,” Solid-State Electron., 19 (1976) 857–862.CrossRefGoogle Scholar
  4. 4.
    D.M. Caughey and R.E. Thomas, “Carrier Mobilities in Silicon Empirically Related to Doping and Field,” Proc. IEEE (Lett.), 55 (1967) 2192–2193.Google Scholar
  5. 5.
    J. Burtscher, F. Dannhauser, and J. Krausse, “Rekombination in Thyristoren und Gleichrichtern, ” Solid-State Electron., 18 (1975) 35–63.CrossRefGoogle Scholar
  6. 6.
    F.W. Staub and M.H. McLaughlin, “High Current Solid State Power Conversion Equipment Cooling,” paper AlChE-15 presented at National Heat Transfer Conference, August 1975.Google Scholar
  7. 7.
    M.H. McLaughlin and E.E. Von Zastrow, “Power Semiconductor Equipment Cooling Methods and Application Criteria,” in Conf. Rec. 1974 9th Ann. Meet. IEEE Industry Applications Soc. (October 1974), 1119–1129.Google Scholar
  8. 8.
    D.E. Houston, M.S. Adler, and E.D. Wolley, “Measurement and Analysis of Carrier Distribution and Lifetime in Fast Switching Power Rectifiers,” IEEE Trans. Electron Devices, ED-27 (1980) 1217–1222.CrossRefGoogle Scholar
  9. 9.
    M.S. Adler, B.A. Beatty, S. Krishna, V.A.K. Temple, and M.L. Torreno, “Second Breakdown in Power Transistors Due to Avalanche Injection,” IEEE Trans. Electron Devices, ED-23 (1976) 851–857.Google Scholar
  10. 10.
    M.S. Adler and H. Glascock, “Surge Characteristics of Power Rectifiers and Thyristors,” IEEE Trans. Electron Devices, ED-26 (1979) 1085–1091.CrossRefGoogle Scholar
  11. 11.
    M.D. Miller, “Differences between Platinum- and Gold-Doped Silicon Power Devices,” IEEE Trans. Electron Devices, ED-23 (1976) 1279–1283.CrossRefGoogle Scholar
  12. 12.
    J.M. Fairfield and B.V. Gokhale, “Gold as a Recombination Center in Silicon,” Solid State Electron., 8 (1965) 685.CrossRefGoogle Scholar
  13. 13.
    K.S. Tarneja and J.E. Johnson, “Tailoring the Recovered Charge in Power Diodes Using 2 MeV Electron Irradiation,” Electrochemical Soc. Meeting, Paper 261RNP, 1975.Google Scholar
  14. 14.
    B.J. Baliga and E. Sun, “Lifetime Control in Power Rectifiers Using Gold, Platinum and Electron Irradiation,” IEEE (1976), IEDM Technical Digest, Washington, D.C., (1978) 495.Google Scholar
  15. 15.
    J.L. Brown, U.S. Patent No. 3877997.Google Scholar
  16. 16.
    A. Jaecklin, et al., U.S. Patent No. 3943549.Google Scholar

Copyright information

© Plenum Press, New York 1982

Authors and Affiliations

  • M. S. Adler
    • 1
  • V. A. K. Temple
    • 1
  1. 1.General Electric CompanySchenectadyUSA

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