Summary
The application of semiconductor devices in power installations is continuously growing due to the improved performance and the resulting cost reductions of such systems. This advancement is made possible by adapting the device characteristics to the circuit requirements. This is particularly the case with reverse-conducting thyristors. In applications where soft commutation through an antiparallel feedback diode is used, new asymmetric device structures are possible which double the power-handling capability for a given turn-off time. By integrating the feedback diode into the asymmetric thyristor chip the dynamic devices properties are further improved and the number of power devices for a given circuit is reduced to a minimum. The analysis of important applications, e.g. PWM-inverter and chopper circuits, is used to demonstrate the ability of reverse-conducting thyristors to reduce the costs and the volume of installations, and to open new high-frequency applications. The important fabrication techniques of the reverse-conducting thyristor are described.
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References
R.A. Kokosa and B.R. Tuft, “A High-Voltage, High-Temperature Reverse Conducting Thyristor,” IEEE Trans. Electron Devices, ED-17 (1970) 667–672.
T. Yatsuo, T. Ogawa, Y. Terasawa, K. Morita, and K. Wajima, “A Diode Integrated High-Speed Thyristor,” Proc. 2nd Conf. Solid State Devices, Tokyo, 1970.
H. Gamo, S. Funakawa, and J. Shimizu, “The Present Status and Applications of Power Reverse Conducting Thyristors,” PESC, 77, 50–60.
P. De Bruyne, A.A. Jaecklin, and T. Vlasak, “The Reverse Conducting Thyristor and Its Applications,” Brown Boveri Review, 66, No. 1 (1979) 5–10.
J. Cornu and M. Lietz, “Numerical Investigation of the Thyristor Forward Characteristic,” IEEE Trans. Electron Devices, ED-19 (1972) 975–981.
M.J. Hill, P.M. van Iseghem, and W. Zimmermann, “Preparation and Application of Neutron Transmutation Doped Silicon for Power Devices Research,” IEEE Trans. Electron Devices, ED-23 (1976) 809–813.
R. Kumar, D.J. Roulston, and S.G. Chamberlain, “Two-Dimensional Simulation of a High Voltage p-i-n Diode with Overhanging Metallization,” IEEE Trans. Electron Devices, ED-28 (1981) 534–540.
A.A. Jaecklin and H. Lawatsch, “On the Dynamic Phase of Thyristor Turn-On,” BBC publication CH-E 4.0309.OE and Bulletin SEV/VSE, Switzerland, 68 (1977) 299–303.
A.A. Jaecklin and H. Lawatsch, “A High-Speed Thyristor with Optimum Turn-On Behaviour,” Brown Boveri Review, 66, No. 1 (1979) 11–16.
J. Vitins and P. Wetzel, “Rückwärtsleitende Thyristoren für die Leistungselektronik,” BBC-Nachrichten, No. 2 (1981) 74–82.
J. Vitins and P. De Bruyne, “The CSR 146: A New 25-kHz Power Thyristor,” IEEE-IAS Conf. Proc. (1980) 695.
S.D. Prough and J. Knobloch, “Solderless Construction of Large Diameter Silicon Power Devices,” IEEE-IAS Conf. Proc. (1977) 817–821.
P.M. van Iseghem, “p-i-n Epitaxial Structures for High Power Devices,”IEEE Trans. Electron Devices, ED-23 (1976) 823–825.
P. De Bruyne and P. Wetzel, “Improved Overvoltage Protection in Power Electronics Using Active Protection Devices,” Electric Power Appl., 2.1 (1979) 29–36.
J. Vitins, “New Reverse Conducting Thyristors for Modern ac and dc Motor Drives,” 3rd. Int. Power-Conversion Conference, Munich, 1981.
J. Vitins and O. Kolb, “Der rückwärtsleitende Thyristor, ein neues Bauelement der Leistungselektronik,” Elektroniker, No. 5, EL 22 – EL 26 (1981).
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© 1982 Plenum Press, New York
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De Bruyne, P., Vitins, J., Sittig, R. (1982). Reverse-Conducting Thyristors. In: Sittig, R., Roggwiller, P. (eds) Semiconductor Devices for Power Conditioning. Earlier Brown Boveri Symposia. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7263-9_7
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DOI: https://doi.org/10.1007/978-1-4684-7263-9_7
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