Gate Turn-Off Thyristors

  • M. Kurata
  • M. Azuma
  • H. Ohashi
  • K. Takigami
  • A. Nakagawa
  • K. Kishi
Part of the Earlier Brown Boveri Symposia book series (EBBS)

Summary

A number of aspects of gate turn-off thyristors (GTOs) will be discussed, including their historical background, technical demands requiring their development, operating principles, device modeling, design considerations, characterization, gate circuits, and a number of applications to actual equipment. The device design is implemented on the basis of modeling and test-sample experiments. The maximum gate turn-off current is shown to vary proportionally to the factors (VJ1SPB) and WNB, where ρSPB repre­sents the sheet resistivity of the gated p-base layer, and WNB the thickness of the nongated n-base layer. The use of a high doped p-base often leads to excessive re­duction in the current-amplification factor of the n-p-n transistor portion, thus finally deteriorating the overall device performance. In extreme cases, it leads to abrupt in­crease in the on-state voltage, which is theoretically interpreted as resulting from bandgap narrowing. Representative characteristics are given for four types of GTO: 600 V - 200 A, 600 V - 600 A, 1300 V - 600 A, and 2500 V - 600 A units. Research and development activities at different organizations are also briefly reviewed. A num­ber of GTO applications are illustrated, including an 18-kVA VWF inverter for motor-speed control, a 170-kVA power supply for air conditioning, and a 610-kVA VWF in­verter for traction-motor control, both for electric railway coaches. A series of CVCF inverters from 30 kVA to 500 kVA output ratings is also mentioned.

Keywords

Auger Recombination Gate Current Current Crowding IEEE International Electron Device IEEE Power Electronics Specialist 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1982

Authors and Affiliations

  • M. Kurata
    • 1
  • M. Azuma
    • 1
  • H. Ohashi
    • 1
  • K. Takigami
    • 1
  • A. Nakagawa
    • 1
  • K. Kishi
    • 1
  1. 1.Toshiba Research and Development CenterKawasakiJapan

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