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Summary

Novel power MOSFETs suitable for the power range below 10 kW are faster than bipo­lar power transistors and need less input current. Although easy to use, they also have some inherent problems. New advanced devices such as MOS thyristors, MOS Darlingtons, opto-MOS thyristors and triacs are now feasible in which MOS and bipo­lar structures are functionally integrated to good advantage.

Keywords

Epitaxial Layer Input Current Chip Area Bipolar Transistor Switching Speed 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1982

Authors and Affiliations

  • J. Tihanyi
    • 1
  1. 1.Siemens AGMunichFed. Ref. Germany

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