Novel power MOSFETs suitable for the power range below 10 kW are faster than bipo­lar power transistors and need less input current. Although easy to use, they also have some inherent problems. New advanced devices such as MOS thyristors, MOS Darlingtons, opto-MOS thyristors and triacs are now feasible in which MOS and bipo­lar structures are functionally integrated to good advantage.


Epitaxial Layer Input Current Chip Area Bipolar Transistor Switching Speed 
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Copyright information

© Plenum Press, New York 1982

Authors and Affiliations

  • J. Tihanyi
    • 1
  1. 1.Siemens AGMunichFed. Ref. Germany

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