Despite its age, the bipolar transistor is still one of the major switching components used for power electronics applications. For those cases where controlled turn-off is required, it is probably the dominant component. In recent years this dominance has been challenged by the emergence of power MOSFETs and GTOs as possible alternatives for power-switching applications. In this paper the three devices are compared. The bipolar receives the most attention, with particular emphasis on performance limitations imposed by the physical properties of the starting material (silicon) and processing techniques. The failure modes and turn-off behavior are also considered. The paper concludes with a discussion of possible future trends in the design and fabrication of power bipolar transistors.
KeywordsBipolar Transistor Power Transistor IEDM Tech Output Transistor Power Electronic Application
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