Junction Field-Effect Devices

  • Jun-Ichi Nishizawa
Part of the Earlier Brown Boveri Symposia book series (EBBS)


The first field-effect devices were proposed by J.E. Lilienfeld in 1926 and O. Heil in 1935 corresponding to a Schottky-gate device and a MOSFET, respectively. The principle of the junction field-effect transistor (JFET) was discovered by Shockley in 1952 and realized as a practical device by Dacey and Ross in 1953. Some years before, in 1950, Nishizawa and Watanabe had applied for a patent for a similar de­vice, which they called the “electrostatic induction transistor” (SIT). The feasibility of this device, however, could be demonstrated only in 1970 by Nishizawa, Terasaki and Shibata. The fundamental idea of the SIT in 1950 was to control a resistance by means of carrier injection into a high resistivity layer using electrostatic induction. Subsequently the term “field effect” was introduced for the same phenomenon and has become widely accepted, leading to some confusion in terminology.


Barrier Height Gate Voltage Drain Current Drain Voltage Gate Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    J.E. Lilienfeld: U.S. Patent No. 1745175 (1930), No. 1900018 (1933).Google Scholar
  2. 2.
    O. Heil: British Patent No. 439457 (Issued December 1935).Google Scholar
  3. 3.
    W. Shockley, “A Unipolar Field-Effect Transistor,” Proc. IRE, 40 (November 1952) 1365–1376.CrossRefGoogle Scholar
  4. 4.
    G.C. Dacey and I.M. Ross, “Unipolar Field-Effect Transistor,” Proc. IRE, 41 (August 1953) 970–979.CrossRefGoogle Scholar
  5. G.C. Dacey and I.M. Ross, “The Field-Effect Transistor,” BST J, 34 (1955) 1149–1189.Google Scholar
  6. 5.
    J. Nishizawa and Y. Watanabe: Japanese Patent 205068 Published Number 28-6077 (Fig. 15), Application date December 1950.Google Scholar
  7. 6.
    J. Nishizawa, T. Terasaki, and J. Shibata, “Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor),” IEEE Trans. Electron Devices, ED-22, No. 4 (April 1975) 185–197.CrossRefGoogle Scholar
  8. 7.
    J. Nishizawa, T. Terasaki, and J. Shibata, “Field-Effect Transistor Versus Ana-lot Transistor (Static Induction Transistor),” IEEE Trans. Electron Devices, ED-22, Not. 4 (April 1975) 185–197.CrossRefGoogle Scholar
  9. J. Nishizawa, “SIT Integrated Circuits,” 1977, Proc. of SRI Conference on Semiconductors, Chapter 6, Handotai Kenkyu (Semiconductor Electronics) Vol. 15, Chap. 6 (Kogyo-Chosakai, 1978).Google Scholar
  10. J. Nishizawa and K. Yamamoto, “High-Frequency High-Power Static Induction Transistor,” IEEE Trans. Electron Devices, ED-25 (March 1978) 314–322.CrossRefGoogle Scholar
  11. J. Nishizawa, “Recent Progress and Potential of SIT (Invited),” Proc. of the 11th Conference (1979 International) on Solid State Devices, Tokyo, 1979; Japanese Journal of Applied Physics, 19 (1980), Supplement 19-1, 3–11.Google Scholar
  12. 8.
    M.S. Shur and L.F. Eastman, “Ballistic Transport in Semiconductor at Low Temperature for Low-Power High-Speed Logic,” IEEE Trans. Electron Devices, ED-26, No. 11 (November 1979) 1677–1683.CrossRefGoogle Scholar
  13. 9.
    C.Y. Chen, A.Y. Cho, P. Garbinski, and G. Bethea, “A Majority-Carrier Photo-detector Grown by Molecular Beam Epitaxy,” 5th International Conference on Vapor Growth and Epitaxy (ICVGE-5), Abstracts (July 1981) 62–63.Google Scholar
  14. 10.
    J. Nishizawa, “High Frequency Base Resistance, Emitter Cut Off and Maximum Power in the Junction Type Transistor,” Trans. IECE of Japan, 44, No. 5 (May 1961) 767–776.Google Scholar
  15. 11.
    Y. Kajiwra, Y. Higaki, M. Kato, and S. Mitsui, “Analysis of Operation Mechanism of a Static Induction Transistor Using a Cross-Type Model,” Trans. IECE of Japan, J63-C, No. 8 (August 1980) 529–536.Google Scholar
  16. 12.
    J. Nishizawa, T. Ohmi, Y. Mochida, T. Matsuyama, and S. Iida, “Bipolar Mode Static Induction Transistor,” International Electron Device Meeting, Technical Digest (December 1978) 676–679.Google Scholar
  17. 13.
    Y. Terasawa, M. Miyata, S. Murakami, T. Nagano, and M. Okamura, “High Power Static Induction Thyristor,” International Electron Device Meeting, Technical Digest (December 1979) 250–253.Google Scholar
  18. Y. Terasawa, “Semiconductor Technologies,” Japan Annual Review in Electronics, Computors and Telecommunication, in press.Google Scholar

Copyright information

© Plenum Press, New York 1982

Authors and Affiliations

  • Jun-Ichi Nishizawa
    • 1
  1. 1.Research Institute of Electrical CommunicationTohoku UniversitySendaiJapan

Personalised recommendations