Abstract
The study and elucidation of the part played by impurities in semiconducting materials is of major importance in semiconductor technology. There are various analytical methods of determining impurities in solids; one convenient means is mass-spectrometer analysis, using the phenomenon of surface ionization. The surface ionization of alkali elements on a heated silicon surface has been studied on a small number of occasions [1–4] and the corresponding ion emission determined.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
N. G. Ban’kovskii and B. N. Formozov, Izv. Akad, Nauk SSSR, Ser. Fiz., 28:2048 (1964).
É. Ya. Zandberg and V. I. Paleev, Zh. Tekhn. Fiz., 35:1308 (1965).
É. Ya. Zandberg and V. I. Paleev, Zh. Tekhn. Fiz., 35:2092 (1965).
É. Ya. Zandberg and V. I. Paleev, Zh. Tekhn. Fiz., 34:2048 (1964).
L. M. Gol’shtein, Dokl. Akad. Nauk SSSR, Vol. 158, No.2 (1964).
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1971 Consultants Bureau, New York
About this chapter
Cite this chapter
Ablyaev, S.A., Alimova, L.Y. (1971). Mass-Spectrometer Determination of Traces of Alkali Elements in Silicon. In: Arifov, U.A. (eds) Secondary Emission and Structural Properties of Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7212-7_32
Download citation
DOI: https://doi.org/10.1007/978-1-4684-7212-7_32
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-7214-1
Online ISBN: 978-1-4684-7212-7
eBook Packages: Springer Book Archive