Stabilization of the Thermophysical Conditions Governing the Growth of Single Crystals of Refractory Metals

  • I. A. Brodskii
  • E. E. Petushkov
  • S. M. Mikhailov


The mechanism of crystal growth lies in the tangential development of layers oriented along the planes having the greatest reticular density. This process is accompanied by the formation of a crystallization front, which largely determines the properties of the emerging single crystal.


Molten Metal Crystallization Front Cathode Temperature Cathode Unit Electrothermal Feedback 
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Copyright information

© Consultants Bureau, New York 1971

Authors and Affiliations

  • I. A. Brodskii
  • E. E. Petushkov
  • S. M. Mikhailov

There are no affiliations available

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