Advertisement

Influence of Ion Bombardment on the Physical and Physicochemical Properties of Silicon

  • Sh. A. Ablyaev
  • V. P. Chirva
  • V. V. Arsenin

Abstract

The method of ionic doping is now finding wider and wider applications in various fields of semiconductor electronics. Although the method has been intensively studied, very little published data exist.

Keywords

Silicon Surface Radiation Defect Irradiate Surface Ultrasonic Machine Semiconductor Electronic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. M. Bredov, Dokl. Akad. Nauk SSSR, 113(4):795 (1957).Google Scholar
  2. 2.
    M. M. Bredov, Fiz. Tverd. Tela, No. 4, 2, 562–564 (1962).Google Scholar
  3. 3.
    J. O. McCaldin, J. Phys. Chem. Solids, 24(9):1073 (1963).ADSCrossRefGoogle Scholar
  4. 4.
    D. B. Medved et al., Appl. Phys. Letters, 3(12):213 (1963).ADSCrossRefGoogle Scholar
  5. 5.
    P. V. Pavlov et al., Fiz. Tverd. Tela, Vol. 81, No. 3 (1966).Google Scholar
  6. 6.
    M. Waldner and P. E. McQuaid, Solid-State Electronics, Pergamon Press, No. 7, pp. 925–931 (1964).Google Scholar
  7. 7.
    Sh. A. Ablyaev, V. M. Mikhaelyan, and V. P. Chirva, Izv. Akad. Nauk Uzbek. SSR, Ser. Fiz., No. 2, p. 93 (1968).Google Scholar
  8. 8.
    Sh. A. Ablyaev and V. P. Chirva, Geliotekhnika, No. 6, p. 9 (1967).Google Scholar
  9. 9.
    Sh. A. Ablyaev and V. P. Chirva, Geliotekhnika, No. 2, p. 45 (1968).Google Scholar

Copyright information

© Consultants Bureau, New York 1971

Authors and Affiliations

  • Sh. A. Ablyaev
  • V. P. Chirva
  • V. V. Arsenin

There are no affiliations available

Personalised recommendations