Influence of Ion Bombardment on the Physical and Physicochemical Properties of Silicon

  • Sh. A. Ablyaev
  • V. P. Chirva
  • V. V. Arsenin


The method of ionic doping is now finding wider and wider applications in various fields of semiconductor electronics. Although the method has been intensively studied, very little published data exist.


Silicon Surface Radiation Defect Irradiate Surface Ultrasonic Machine Semiconductor Electronic 
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Copyright information

© Consultants Bureau, New York 1971

Authors and Affiliations

  • Sh. A. Ablyaev
  • V. P. Chirva
  • V. V. Arsenin

There are no affiliations available

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