Advertisement

Semiconductors pp 149-157 | Cite as

IV-VI Compounds

  • T. F. Connolly
Part of the Solid State Physics Literature Guides book series (SSPLG)

Keywords

Epitaxial Film Lead Sulfide Lead Telluride Lead Chalcogenide Lead Selenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

13.a. General, Reviews, and Bibliographies

  1. M. Neuberger, (Electronic Properties Information Center, Hughes Aircradt Company, Culver City, California), DS-164 (Jan. 1970), 200 pp.Google Scholar
  2. L. S. Palatnik, V. K. Sorokin, and L. P. Zozulya, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (2): 224–227 (1970)Google Scholar
  3. L. S. Palatnik, V. K. Sorokin, and L. P. Zozulya, Inorg. Mater., 6 (2): 257–261 (1970)Google Scholar
  4. Yu. I. Ravich, B. A. Efimova, and I. A. Smirnov, L. S. Stil’bans, ed. (translated from Russian by Albin Tybulewicz ), Plenum Press, New York (1970), 400 pp.Google Scholar
  5. Yvonne Y. W. Tsang, UCRL-19144 (Jan. 1970), 98 pp. (Thesis)Google Scholar
  6. N. Kh. Abrikosov, V. F. Bankina, L. V. Poretskaya, L. E. Shelimova, and E. V. Skudnova, Plenum Press, New York (1969)Google Scholar
  7. R. Dalven, Infrared Phys., 9: 141–184 (1969)ADSCrossRefGoogle Scholar
  8. M. Neuberger, (Electronic Properties Information Center, Hughes Aircraft Company, Culver City, California)Google Scholar
  9. V. G. Vanyarkho, V. P. Zleomanov, and A. V. Novoselova, Izv. Akad. Nauk SSSR, Neorg. Mater., 5(11):2025–2026 (1969)Google Scholar
  10. V. G. Vanyarkho, V. P. Zleomanov, and A. V. Novoselova, Inorg. Mater., 5 (11): 1726–1727 (1969)Google Scholar
  11. E. Burstein, S. Perkowitz, and M. H. Brodsky, (Pennsylvania Univ., Philadelphia, Dept. of Phys.), Rept. No. TR-21; AD-679586 (1968), 22 pp.Google Scholar
  12. M. S. Marius, Thesis, Penn. State University, University Park, Pa. (1968), 171 pp.Google Scholar
  13. M. S. Marius, Available from University Microfilms, Ann Arbor, Mich., Order No. 69–9751Google Scholar
  14. A. J. Strauss and R. F. Brebrick, J. Phys. (Suppl), 29: C4 (1968)Google Scholar
  15. M. H. Cohen, L. M. Falicov, and S. Golin, IBM J. Res. Dev., 8 (3): 215–227 (1964)CrossRefGoogle Scholar

13.b. Silicon Compounds

  1. Hans H. Emons, Siegfried Moehlhenrich, and Lothar Theisen East German Patent 65,914 (March 21, 1969 ), 2 pp.Google Scholar
  2. E. A. Hauschild and C. R. Kannewurf, J. Phys. Chem. Solids, 30: 353 (1969)ADSCrossRefGoogle Scholar
  3. J. Hoeft, F. J. Lovas, E. Tiemann, and T. Torring, Z. Naturforschung, 24a: 1422–1423 (1969)ADSGoogle Scholar

13.c. Germanium Compounds

  1. S. G. Karbanov, V. P. Zlomanov, and Yu. M. Ukrainskii, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (1): 125–126 (1970)Google Scholar
  2. S. G. Karbanov, V. P. Zlomanov, and Yu. M. Ukrainskii, Inorg. Mater., 6 (1): 104–105 (1970)Google Scholar
  3. A. G. Mikolaichuk and A. N. Kogut, Kristallografiya, 15: 353–357 (1970)Google Scholar
  4. S. G. Karbanov, V. P. Zlomanov, and Yu. M. Ukrainskii, Soviet Phys.-Cryst., 15: 294–298 (1970)Google Scholar
  5. P. F. Weller, J. Electrochem. Soc., 113: 90–92 (1966)CrossRefGoogle Scholar
  6. C. R. Kannewurf and R. J. Cashman, J. Phys. Chem. Solids, 22: 293–298 (1961)ADSCrossRefGoogle Scholar
  7. S. M. Nikolov, H. M. Vodenicharov, S. G. Karbanov, and P. Petrov, Compt. Rend. Acad. Bulgare Sci., 23 (3): 257–260 (1970)Google Scholar
  8. R. J. Baughman and R. A. Lefever, Mat. Res. Bull., 4: 721–726 (1969)CrossRefGoogle Scholar
  9. K. L. Chopra and S. K. Bahl, J. Appl. Phys., 40: 4171–4178 (1969)ADSCrossRefGoogle Scholar
  10. S. G. Karbanov, P. Petrov, and S. Ivanov, Compt. Rend. Acad. Bulgare Sci., 22 (12): 1381–1384 (1969)Google Scholar
  11. S. G. Karbanov, V. P. Zlomanov, and A. V. Novoselova, Izv. Akad. Nauk SSSR, Neorg. Mater., 5(7):1171–1174Google Scholar
  12. S. G. Karbanov, V. P. Zlomanov, and A. V. Novoselova, Inorg. Mater., 5 (7): 997–1000 (1969)Google Scholar
  13. A. P. Lyubimov, I. I. Bespal’tseva, and L. D. Dudkin, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (7): 1287–1288 ( 1969Google Scholar
  14. A. P. Lyubimov, I. I. Bespal’tseva, and L. D. Dudkin, Inorg. Mater., 5 (7): 1095–1096 (1969)Google Scholar
  15. M. d’Amboise, G. Handfield, and M. Bourgon, Can. J. Chem., 46: 3545–3550 (1968)CrossRefGoogle Scholar
  16. N. P. Gavaleshko, M. V. Kurik, and A. I. Savchuk, Fiz. Tekh. Poluprov., 1 (7): 1099–1100 (1967)Google Scholar
  17. N. P. Gavaleshko, M. V. Kurik, and A. I. Savchuk, Sov. Phys.-Semiconductor, 1 (7): 920–921 (1968)Google Scholar
  18. Howard S. Young, E. I. duPont deNemours, Co. U.S. Patent 3,375,071, March 26, 1968, 4 pp.Google Scholar
  19. R. Nitsche, Proc. Intern. Conf. on Crystal Growth, Boston, June 20–24, 1966, Crystal Growth (H. Steffen Peiser, ed.), Pergamon Press, New York (1967) pp. 215–220Google Scholar
  20. G. Cohen-Solal, Y. Marfaing, and F. Bailly, Rev. Phys. Appl., 1: (1) 11–17 (1966)CrossRefGoogle Scholar

13.d. Tin Compounds

  1. A. G. Mikolaichuk and D. M. Freik, Fiz. Tverd. Tela, 11 (9): 2520–2525 (1969)Google Scholar
  2. A. G. Mikolaichuk and D. M. Freik, Sov. Phys. Solid State, 11 (9): 2033–2036 (1970)Google Scholar
  3. A. N. Mariano and K. L. Chopra, Appl. Phys. Letters, 10: 282 (1967)ADSCrossRefGoogle Scholar
  4. R. Nitsche, H. U. Bolsterli, and M. Lichtensteiger, J. Phys. Chem. Solids, 21: 199 (1961)ADSCrossRefGoogle Scholar
  5. W. Albers, C. Haas, and F. van der Maesen, J. Phys. Chem. Solids, 15: 306 (1960)ADSCrossRefGoogle Scholar
  6. L. E. Conroy, (Dept. of Chemistry, Minnesota Univ., Minneapolis), Contract DA-ARO(D)-31–124-G661, AROD-5532–3-C; AD-695697 (Oct. 1969), 5 pp.Google Scholar
  7. Kyu Chang Park, University Microfilms, Ann Arbor, Mich., Order No. 68–1958, 1967. Ph. D. thesis from University of MinnesotaGoogle Scholar
  8. D. L. Greenaway and R. Nitsche, J. Phys. Chem. Solids, 26: 1445 (1965)ADSCrossRefGoogle Scholar
  9. R. Nitsche, H. U. Bolsterli, and M. Lichtensteiger, J. Phys. Chem. Solids, 21: 199 (1961)ADSCrossRefGoogle Scholar
  10. R. Nitsche, J. Phys. Chem. Solids, 17: 163–165 (1960)ADSCrossRefGoogle Scholar
  11. R. C. Blair and Z. A. Munir, J. Am. Ceram. Soc., 53 (6): 301–303 (1970)CrossRefGoogle Scholar
  12. B. L. Evans and R. A. Hazelwood, British J. Appl. Phys., 2: 1507–1516 (1969)ADSGoogle Scholar
  13. A. Rabenau and H. Rau, Philips Tech. Rev., 30 (4): 89–96 (1969)Google Scholar
  14. P. A. Lee and G. Said, Brit. J. Appl. Phys. (J. Phys. D), Ser., 2:(1)837–843 (1968)ADSGoogle Scholar
  15. G. Busch, C. Frohlick, and F. Hulliger, Helv. Phys. Acta, 34: 359–368 (1961)Google Scholar
  16. Dean Lewis Mitchell, Dissertation Abstr., 20: 2857–2858 (1960)Google Scholar
  17. Henry S. Belson and Bland Houston, J. Appl. Phys., 41: 422–424 (1970)ADSCrossRefGoogle Scholar
  18. S. E. R. Hiscocks, J. Mater. Sci., 4: 310–312 (1969)ADSCrossRefGoogle Scholar
  19. Pierre C. Bourgeois, Compt, Rend., Ser. B, 265: 819–821 (1967)Google Scholar
  20. A. N. Mariano and K. L. Chopra, Appl. Phys. Letters, 10: 282 (1967)ADSCrossRefGoogle Scholar
  21. S. I. Novikova and L. E. Shelimova, Fiz. Tverd. Tela, 9 (5): 1046–1047 (1967)Google Scholar
  22. S. I. Novikova and L. E. Shelimova, Soy. Phys.—Solid State, 9 (5): 1336–1338 (1967)Google Scholar
  23. H. R. Riedl, R. B. Schoolar, and Bland Houston, Solid-State Commun., 4: 399–402 (1966)ADSCrossRefGoogle Scholar
  24. P. F. Weller, (Thomas J. Watson Research Center, IBM Corp., Yorktown Heights, N. Y.), J. Electrochem. Soc., 113: 90–92 (1966)Google Scholar
  25. M. Moldovanova, S. Dimitrova, and S. Decheva, Fiz. Tverd. Tela 6 (12): 3717 (1964)Google Scholar
  26. M. Moldovanova, S. Dimitrova, and S. Decheva, Sov. Phys.—Solid State, 6 (12): 2979 (1965)Google Scholar
  27. J. A. Kafalas, R. F. Brebrick, and A. J. Strauss, Appl. Phys, Letters, 4: 93 (1964)ADSCrossRefGoogle Scholar
  28. Chikara Hirayama, Yoshio Ichikawa, and Anthony M. DeRoo, J. Phys. Chem., 67: 1039 (1963)CrossRefGoogle Scholar
  29. W. Albers and J. Verberkt, J. Mater. Sci., 5: 24–28 (1970)ADSCrossRefGoogle Scholar
  30. W. Albers and J. Verberkt, Philips Res. Rept., 25 (1): 17–20 (1970)Google Scholar
  31. I. Lefkowitz, M. Shields, and G. Dolling, J. Crystal Growth, 6: 143–146 (1970)ADSCrossRefGoogle Scholar
  32. A. Stegherr, Thesis, Technical University Aachen, Germany, Philips Res. Repts., Suppl. No. 6 (1969)Google Scholar
  33. E. Beleites and H. Nieke, Ann. Phys. (Germany), 18: 258–267 (Nov. 1966)ADSCrossRefGoogle Scholar
  34. A. G. Talybov, Azerb. Khim. Zh. (Baku), 30 (6): 111–118 (1963)Google Scholar
  35. W. Albers, C. Haas, H. Ober, G. R. Schodder, and J. D. Wasscher, J. Phys. Chem. Solids, 23: 215–220 (1962)ADSCrossRefGoogle Scholar

13.e. Lead Compounds

  1. O. C. Kopp and G. W. Clark, J. Cryst. Growth, 8: 135–136 (1971)ADSCrossRefGoogle Scholar
  2. R. V. Kudryavtseva, S. A. Semiletov, and G. L. Perevezentseva, Kristallografiya, (12)1: 109–112 (1969)Google Scholar
  3. R. V. Kudryavtseva, S. A. Semiletov, and G. L. Perevezentseva, Sov. Phys.-Cryst., (12)1: 86–89 (1969)Google Scholar
  4. S. A. Semiletov, V. A. Vlasov, and Z. A. Magomedov, Rost Kristallov, Vol. 8, Izd. Akad. Nauk (1968), pp. 184–187Google Scholar
  5. S. A. Semiletov, V. A. Vlasov, and Z. A. Magomedov, Growth of Crystals, Vol. 8. (A. V. Shubnikov and N. N. Sheftal’, eds.), Consultants Bureau, New York (1969), pp. 150–152Google Scholar
  6. Zvi Blank, Walter Brenner, and Yoshiyuki Okamoto, Mat. Res. Bull., 3: 555–562 (1968)CrossRefGoogle Scholar
  7. Leroy C. Lewis, University Microfilms, Inc., Ann Arbor, Mich., Order No. 68–11, 915 Ph. D. thesis, Oregon State Univ., 1968Google Scholar
  8. R. F. Egerton and C. Juhasz, Brit. J. Appl. Phys., 18: 1009 (1967)ADSCrossRefGoogle Scholar
  9. P. Hudock, Trans. AIME, 239: 338 (1967)Google Scholar
  10. H. Rau and A. Rabenau, Solid State Commun., 5: 331 (1967)ADSCrossRefGoogle Scholar
  11. M. S. Seltzer, Trans. AIME, 239: 650 (1967)Google Scholar
  12. V. V. Badikov and A. A. Godovikov, Acta Cryst., 21:Pt.7, Suppl. A257 (Dec. 1966)Google Scholar
  13. V. V. Badikov and A. A. Godovikov, Seventh International Congress and Symposium International Union of Crystallography, Moscow, 1966Google Scholar
  14. V. V. Badikov and A. A. Godovikov, Zap. Vses. Mineralog. Obshchestva SSSR, 95: 526–536 (1966)Google Scholar
  15. W. Brenner, Z. Blank, and Y. Okamoto, Nature, 212: 392–393 (1966)ADSCrossRefGoogle Scholar
  16. G. I. Distler, S. A. Kobzareva, and V. S. Cudakov, Acta Cryst., 21:Pt.7, Suppl. A275 (Dec. 1966)Google Scholar
  17. G. I. Distler, S. A. Kobzareva, and V. S. Cudakov, Seventh International Congress and Symposium International Union of Crystallography, Moscow, 1966, George Hass and Rudolf E. Thun, eds., Academic Press, New York and London (1966)Google Scholar
  18. B. A. Kazennov, Rost Kristallov, Vol. 4, Izd.Akad. Nauk (1964), pp. 101–112Google Scholar
  19. B. A. Kazennov, Rost Kristallov, Growth of Crystals, Vol. 4. (A. V. Shubnikov and N. N. Sheftal’, eds.), Consultants Bureau, New York (1966), pp. 82–90Google Scholar
  20. W. Kleber and I. Meusel, Z. Physik. Chem. (Frankfurt), 231: 191–202 (1966)Google Scholar
  21. J. F. Miller, J. W. Moody, and R. C. Himes, Lincoln Lab., Massachusetts Inst. of Tech., Lexington, Mass., Contract AF 19(628)-5167Google Scholar
  22. E. G. Bylander and A. S. Rodolakis, Proc. IEEE, 53: 395 (1965)CrossRefGoogle Scholar
  23. Lucien Capella and Jean-Claude Heyraud, Compt. Rend., 261: 4053–4054 (1965)Google Scholar
  24. J. W. Moody and R. C. Himes, Battelle Tech. Rev., 14: 3 (1965)Google Scholar
  25. A. Ya. Preobrazhenskii and V. A. Stepanov, Pribory i Tekhn. Éksperim., 10: 196–198 (1965)Google Scholar
  26. E. H. Putley, (Royal Radar Establishment, Malvern, Worcs., England), Materials Used in Semiconductor Devices (C. A. Hogarth, ed.), Interscience Publishers, New York, London, Sydney (1965), p. 71Google Scholar
  27. J. N. Zemel, J. D. Jensen, and R. B. Schoolar, Phys. Rev., 140: A330 (1965)ADSCrossRefGoogle Scholar
  28. Hans Norden, Cavendish Lab., Cambridge, England, Proc. European Reg. Conf., Electron Microscopy, 3rd, Prague (1964)Google Scholar
  29. J. W. Matthews and K. Isebeck, Phil. Mag., 8: 469 (1963)ADSCrossRefGoogle Scholar
  30. L. V. Bryatov and I. P. Kuzmina, Rost Kristallov, Vol. 3, Izd. Akad. Nauk (1961), pp. 416–420Google Scholar
  31. L. V. Bryatov and I. P. Kuzmina, Growth of Crystals, Vol. 3. (A. V. Shubnikov and N. N. Sheftal’, eds.), Consultants Bureau, New York (1962), pp. 294–296Google Scholar
  32. Bernard Kopelman, U. S. Patent 3,174,823 (Cl. 23–50) (March 23, 1965 ) Appl. Dec. 15, 1961, 3 pp.Google Scholar
  33. J. Bloem, Philips Res. Rep., 11: 273–336 (1956)Google Scholar
  34. W. D. Lawson, J. Appl. Phys., 23: 495 (1952)ADSCrossRefGoogle Scholar
  35. Yu. I. Ravich, B. A. Efimova, and V I. Tamarchenko, Phys. Stat. Sol., 43B: 11–33 (1971)ADSCrossRefGoogle Scholar
  36. E. E. Hansen and Z. A. Munir, J. Electrochem. Soc., 117: 121–124 (1970)CrossRefGoogle Scholar
  37. M. I. Karklina, M. S. Ablova, and V. M. Muzhdaba, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (5): 985–987 (1970)Google Scholar
  38. M. I. Karklina, M. S. Ablova, and V. M. Muzhdaba, Inorg. Mater., 6 (5): 860–862 (1970)Google Scholar
  39. L. S. Palatnik, V. M. Kosevich, L. P. Zozulya, L. F. Zozulya, and V. K. Sorokin, Fiz. Tverd. Tela, 11 (9): 2586–2589 (1969)Google Scholar
  40. L. S. Palatnik, V. M. Kosevich, L. P. Zozulya, L. F. Zozulya, and V. K. Sorokin, Sov. Phys.—Solid State, 11 (9): 2086–2088 (1970)Google Scholar
  41. L. S. Palatnik, V. K. Sorokin, and L. P. Zozulya, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (2): 224–239 (1970)Google Scholar
  42. L. S. Palatnik, V. K. Sorokin, and L. P. Zozulya, Inorg. Mater., 6 (2): 198–202 (1970)Google Scholar
  43. L. S. Palatnik, V. K. Sorokin and L. P. Zozulya, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (2): 224–239 (1970)Google Scholar
  44. L. S. Palatnik, V. K. Sorokin and L. P. Zozulya, Inorg. Mater., 6 (2): 198–202 (1970)Google Scholar
  45. L. S. Palatnik, V. K. Sorokin, and L. P. Zozulya, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (3): 441–446 (1970)Google Scholar
  46. L. S. Palatnik, V. K. Sorokin, and L. P. Zozulya, Inorg. Mater., 6 (3): 387–391 (1970)Google Scholar
  47. Jacques Steininger, Met. Trans., 1: 2939–2941 (1970)Google Scholar
  48. J. M. Steininger, Lincoln Lab., Mass. Inst. of Tech., ESD-TR-70–33 (May 1970), pp. 15–16Google Scholar
  49. J. W. Wagner and A. G. Thompson, J. Electrochem. Soc., 117: 936–940 (1970)CrossRefGoogle Scholar
  50. S. E. R. Hiscocks, J. Mater. Sci., 4: 310–312 (1969)ADSCrossRefGoogle Scholar
  51. K. Igaki and T. Suzuki, Nippon Kinzoku Gakkaishi, 33 (2): 190–194 (1969)Google Scholar
  52. A. Rabenau and H. Rau, Philips Tech. Rev., 30 (4): 89–96 (1969)Google Scholar
  53. G. G. Sumner and L. L. Reynolds, J. Vacuum Sci. Tech., 6: 493–497 (1969)ADSCrossRefGoogle Scholar
  54. R. Suryanarayanan and C. Paparoditis, J. Vac. Sci. Tech., 6: 497 (1969)ADSCrossRefGoogle Scholar
  55. T. Suzuki, N. Ohashi, and K. Igaki, J. Japan. Inst. Metals, 33 (2): 194–198 (1969)Google Scholar
  56. Halle Abrams, Ph. D. thesis, Materials Research Center, Lehigh University (1968)Google Scholar
  57. I. S. Aver’yanov, N. P. Markina, F. P. Volkova, G. V. Pertsev, and S. P. Chashchin, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (6): 825–828 (1968)Google Scholar
  58. I. S. Aver’yanov, N. P. Markina, F. P. Volkova, G. V. Pertsev, and S. P. Chashchin, Inorg. Mater., 4 (6): 723–726 (1968)Google Scholar
  59. Ya. S. Budzhak, Rost Kristallov, Vol. 6B, Izd. Akad. Nauk (1965), pp. 229–230Google Scholar
  60. Ya. S. Budzhak, Growth of Crystals, Vol. 6B (A. V. Shubnikov and N. N. Sheftal’, eds.), Consultants Bureau, New York (1968), pp. 43–44Google Scholar
  61. M. I. Karklina, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (8): 1344–1345 (1968)Google Scholar
  62. M. I. Karklina, Inorg. Mater., 4 (8): 1178–1179 (1968)Google Scholar
  63. S. Kasimov, Dokl. Akad. Nauk Tadzh. SSR, 11 (1): 26–29 (1968)Google Scholar
  64. E. Levine and R. N. Tauber, J. Electrochem. Soc., 115: 107 (1968)CrossRefGoogle Scholar
  65. B. Lewis and D. J. Stirland, J. Cryst. Growth, 3 (4): 200–205 (1968)ADSCrossRefGoogle Scholar
  66. P. M. Starik and P. I. Voronyuk, Rost Kristallov, Vol. 6B, Izd. Akad. Nauk (1965), pp. 281–283Google Scholar
  67. P. M. Starik and P. I. Voronyuk, Growth of Crystals, Vol. 6B (A. V. Shubnikov and N. N. Sheftal, eds.), Consultants Bureau, New York (1968), pp. 91–92Google Scholar
  68. I. S. Aver’yanov, M. P. Markina, F. P. Volkova, G. V. Pertsev, and S. P. Chashchin, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (5): 877–878 (1967)Google Scholar
  69. I. S. Aver’yanov, M. P. Markina, F. P. Volkova, G. V. Pertsev, and S. P. Chashchin, Inorg. Mater., 3 (5): 783–784 (1968)Google Scholar
  70. M. A. Berchenko and A. I. Beliaev, Chalcogenides, Naukova Dumka (1967), pp. 94–100Google Scholar
  71. M. A. Berchenko and A. I. Beliaev, Lockheed Missiles and Space Co., Palo Alto, California, 7 pp.Google Scholar
  72. P. Bourgeois and P. Moch, Compt. Rend., 264: 1732–1735 (1967)Google Scholar
  73. P. C. Bourgeois and M. Y. Moulin, Compt. Rend., 264: 1830 (1967)Google Scholar
  74. A. J. Crocker, J. Phys. Chem. Solids, 281903 (1967)Google Scholar
  75. R. F. Egerton and C. Juhasz, Brit. J. Appl. Phys., 18: 1009 (1967)ADSCrossRefGoogle Scholar
  76. A. N. Mariano and K. L. Chopra, Appl. Phys. Letters, 10: 282 (1967)ADSCrossRefGoogle Scholar
  77. T. A. Mashaev, V. V. Krapkhim, and S. P. Pavlov, Chalcogenides, Kiev, pp. 101–107Google Scholar
  78. J. F. Miller, J. W. Moody, and R. C. Himes, Trans. AIME, 239: 342 (1967)Google Scholar
  79. A. V. Novoselova, V. P. Zlomanov, and O. V. Mateev, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (8): 1323–1329 (1967)Google Scholar
  80. A. V. Novoselova, V. P. Zlomanov, and O. V. Mateev, Inorg. Mater., 3 (8): 1154–1159 (1967)Google Scholar
  81. G. G. Rybnikova, B. A. Popovkin, V. G. Butkevich, and A. V. Novoselova, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (12): 1934–1937 (1967)Google Scholar
  82. G. G. Rybnikova, B. A. Popovkin, V. G. Butkevich, and A. V. Novoselova, Inorg. Mater., 3 (12): 2217–2220 (1967)Google Scholar
  83. L. A. Sergeeva, I. P. Kalinkin, and V. B. Aleskovskii, Kristallografiya, 12 (1): 113–118 (1967)Google Scholar
  84. L. A. Sergeeva, I. P. Kalinkin, and V. B. Aleskovskii, Soy. Phys.—Cryst., 12 (1): 90–94 (1967)Google Scholar
  85. O. I. Tananaeva, R. A. Sapozhnikov, and V. A. Novoselova, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (3): 578 (1967)Google Scholar
  86. O. I. Tananaeva, R. A. Sapozhnikov, and V. A. Novoselova, Inorg. Mater., 3 (3): 514–515 (1967)Google Scholar
  87. A. I. Belyaev, M. A. Berchenko, and A. A. Telegrin, Sb. Kosk. Inst. Steli i Splavov, No. 41: 366–374 (1966)Google Scholar
  88. D. M. Chizhikov and V. P. Shastlivii, Izd. Nauka, Moscow (1966), 279 pp.Google Scholar
  89. A. J. Crocker, Brit. J. Appl. Phys., 17: 433 (1966)ADSCrossRefGoogle Scholar
  90. V. I. Kaidanov, R. B. Melnik, and E. Sh. Fedorenko, Izv. Akad. Nauk SSSR, Neorg. Mater., 2 (12): 2246–2247 (1966)Google Scholar
  91. V. I. Kaidanov, R. B. Melnik, and E. Sh. Fedorenko, Inorg. Mater., 2 (12): 1939–1941 (1966)Google Scholar
  92. M. I. Karklina and T. L. Koval’chik, Izv. Akad. Nauk SSSR, Neorg. Mater., 2 (7): 1190–1193 (1966)Google Scholar
  93. M. I. Karklina and T. L. Koval’chik, Inorg. Mater., 2 (7): 1015–1017 (1966)Google Scholar
  94. J. F. Miller, J. W. Moody, and R. C. Himes, Mass. Inst. of Tech., Lincoln Lab., Lexington, Mass., Final report 15 July 1965 to 15 July 1966, Contract AF 19(628)-5167, ESD-TR-67–37 (July 1966 ), 12 pp.Google Scholar
  95. L. S. Palatnik and V. K. Sorokin, Fiz. Tverd. Tela, 8 (4): 1088–1090 (1966)Google Scholar
  96. L. S. Palatnik and V. K. Sorokin, Sov. Phys.—Solid State, 8 (4): 869–870 (1966)Google Scholar
  97. Noboru Takahashi, Henri Martina, and Jean-Jacques Trillat, Compt. Rend., 262: 824–826 (1966)Google Scholar
  98. Ya. S. Budzhak, Rost Kristallov, Vol. 6B, Izd. Akad. Nauk (1965), pp. 229–230Google Scholar
  99. Ya. S. Budzhak, Growth of Crystals, Vol. 6B (A. V. Shubnikov and N. N. Sheftal, eds.), Consultant Bureau, New York (1968), pp. 43–44Google Scholar
  100. E. G. Bylander and A. S. Rodolakis, Proc. IEEE, 53: 395–396 (1965)CrossRefGoogle Scholar
  101. H. Gobrecht, K. -E. Boeters, and H. -J. Fleischer, Z. Physik, 187: 232–242 (1965)ADSCrossRefGoogle Scholar
  102. C. A. Hogarth, ed., John Wiley and Sons, New York (1965), 243 pp.Google Scholar
  103. Bernard Kopelman, U. S. 3,174,823 (Cl. 23–50), March 23, 1965Google Scholar
  104. L. S. Palatnik and V. K. Sorokin, Izv. Vyssh. Uchebn. Zaved., Fiz., SSSR 8: 48–52 (1965)Google Scholar
  105. L. S. Palatnik and V. K. Sorokin, Izv. Vyssh. Ucheben. Zaved., Fiz., SSSR, No. 3:48–52 Sov. Phys. J., No. 3:33–35 (May/June, 1965 )Google Scholar
  106. E. H. Putley, Materials Used in Semiconductor Devices, John Wiley and Sons, New York (1965), p. 71–114Google Scholar
  107. H. M. Smith and A. F. Turner, Appl. Opt., 4: 147 (1965)ADSCrossRefGoogle Scholar
  108. P. M. Starik and P. I. Voronyuk, Rost Kristallov, Vol. 6B, Izd. Akad. Nauk (1965), pp. 281–283Google Scholar
  109. P. M. Starik and P. I. Voronyuk, Growth of Crystals, Vol. 6B (A. V. Shubnikov and N. N. Sheftal, eds.), Consultants Bureau, New York (1968), pp. 91–92Google Scholar
  110. J. N. Zemel, J. D. Jensen, and R. B. Schoolar, Phys. Rev., 140: A330 (1965)ADSCrossRefGoogle Scholar
  111. V. P. Zlomanov, O. V. Matveev, and A. V. Novoselova, Zh. Neorg. Khim., SSSR, 10: 1753 (1965)Google Scholar
  112. J. F. Butler, J. Electrochem Soc., 111: 1150 (1964)CrossRefGoogle Scholar
  113. Yoshimi Makino, J. Phys. Soc. Japan, 19: 580 (1964)ADSGoogle Scholar
  114. Martin Weinstein, Trans. AIME, 230: 321 (1964)Google Scholar
  115. R. A. Zingaro and D. O. Skovlin, J. Electrochem. Soc., 111: 42 (1964)CrossRefGoogle Scholar
  116. Richard F. Bis, J. Phys. Chem. Solids, 24: 579–581 (1963)ADSGoogle Scholar
  117. G. R. Gronin, M. E. Jones, and O. Wilson, J. Electrochem. Soc., 110: 582 (1963)CrossRefGoogle Scholar
  118. Kenzo Igaki and Nobumitsu Ohashi, J. Phys. Soc. Japan, 18 (11): 143 (1963)Google Scholar
  119. Yasuo Kanai and Katsufusa Shohno, Japan. J. Appl. Phys., 2: 6 (1963)ADSCrossRefGoogle Scholar
  120. M. K. Norr, AD-423367 (1963), 27 pp.Google Scholar
  121. R. Mazelsky, M. S. Lubell, and W. E. Kramer, J. Chem. Phys., 37: 45–47 (1962)ADSCrossRefGoogle Scholar
  122. E. P. A. Metz, R. C. Miller, and R. Mazelsky, J. Appl. Phys., 33: 2016 (1962)ADSCrossRefGoogle Scholar
  123. W. W. Scanlon, Phys. Rev., 126: 509–513 (1962)ADSCrossRefGoogle Scholar
  124. A. C. Prior, J. Electrochem. Soc., 108: 82–87 (1961)CrossRefGoogle Scholar
  125. A. C. Prior, J. Sci. Instr., 38: 198–201 (1961)ADSCrossRefGoogle Scholar
  126. V. A. Dorin and G. M. Filaretova, Fiz. Metal. i Metalloved., 9: 718–721 (1960)Google Scholar
  127. C. B. Finch and J. B. Wagner, Jr., J. Electrochem. Soc., 107: 932 (1960)CrossRefGoogle Scholar
  128. N. I. Glistenko and A. A. Yeremina, Zh. Neorgan. Khim., 5: 1003 (1960)Google Scholar
  129. H. Gobrecht, F. Niemeck, and K.-E. Boeters, Z. Physik, 159: 533–540 (1960)ADSCrossRefGoogle Scholar
  130. Karl Gurs, Z. Physik, 158: 533–552 (1960)ADSCrossRefGoogle Scholar
  131. W. D. Lawson and A. S. Young, J. Electrochem. Soc., 107: 206–210 (1960)CrossRefGoogle Scholar
  132. E. Miller, K. Komarek, and I. Cadoff, Trans. AIME, 215: 882 (1959)Google Scholar
  133. E. Miller, I. Cadoff, and K. Komarek, J. Electrochem. Soc., 105: 252C (1958)Google Scholar
  134. H. Gobrecht, F. Niemeck, and K. E. Boeters, Z. Physik, 148: 281–297 (1957)ADSCrossRefGoogle Scholar
  135. W. D. Lawson, J. Appl. Phys., 23: 495 (1952)ADSCrossRefGoogle Scholar
  136. W. D. Lawson, J. Appl. Phys., 22: 1444 (1951)ADSCrossRefGoogle Scholar
  137. Frederick C. Abbott, University of Delaware, Newark, Dissertation Abstr. 665530, 162 pp.Google Scholar
  138. E. H. Putley, Materials Used in Semiconductor Devices (C. A. Hogarth, ed.), Interscience Publishers, New York, p. 71Google Scholar

13.f. Lead-Tin Mixed Systems

  1. J. R. Butler, J. Vacuum Sci. Tech., 7: 174 (1970)ADSCrossRefGoogle Scholar
  2. T. O. Farinre and J. N. Zemel, J. Vacuum Sci. Tech., 7: 121–126 (1970)ADSCrossRefGoogle Scholar
  3. A. G. Thompson, Bell and Howell Co., Pasadena, Calif., AD-709 969 (May 1970), 103 pp.Google Scholar
  4. S. Wrobel, Bull. Am. Phys. Soc., 14: 330 (1969)Google Scholar
  5. Richard F. Bis and Jack R. Dixon, AD-697647, NOLTR-69–146 (Sept. 3, 1969 ), 102 pp.Google Scholar
  6. S. E. R. Hiscocks, J. Mater. Sci., 4: 310–312 (1969)ADSCrossRefGoogle Scholar
  7. K. J. Linden and C. A. Kennedy, J. Appl. Phys., 40: 2595–2597 (1969)ADSCrossRefGoogle Scholar
  8. John W. Wagner and Robert K. Willardson, Trans. AIME, 245: 461 (1969)Google Scholar
  9. Joy Norman Zemel, Solid State Surface Sci., 1: 291–403 (1969)Google Scholar
  10. J. F. Butler and T. C. Harman, Appl. Phys. Letters, 12: 347–349 (1968)ADSCrossRefGoogle Scholar
  11. A. R. Calawa, T. C. Harman, M. Finn, and P. Youtz, Trans. AIME, 242: 374 (1968)Google Scholar
  12. S. E. R. Hiscocks and J. B. Mullin, Royal Radar Establishment Newsletter and Res. Rev. No. 7, 1968, 3 pp.; also N69–28664 15–09Google Scholar
  13. S. E. R. Hiscocks and P. D. West, J. Mater. Sci., 3: 76–79 (1968)ADSCrossRefGoogle Scholar
  14. T. B. Reed and W. J. LaFleur, Lincoln Lab., Mass. Inst. of Tech. Rept. ESD-TR-68–17 (April 1968), pp. 20–23Google Scholar
  15. A. M. Reti, A. K. Jena, and M. B. Bever, Trans. AIME, 242: 371 (1968)Google Scholar
  16. Koichi Sugiyama, Japan. J. Appl. Phys., 7: 961–962 (1968)ADSCrossRefGoogle Scholar
  17. John W. Wagner and Robert K. Willardson, Trans. AIME, 242: 366 (1968)Google Scholar
  18. T. C. Harman, A. R. Calawa, and Mary C. Finn, ESD-TR-67–266 (May 1967), Contract AF 19(628)-5167, p. 1Google Scholar
  19. B. A. Riggs, J. Electrochem. Soc., 114: 708 (1967)CrossRefGoogle Scholar
  20. A. J. Strauss, Phys. Rev., 157: 608–611 (1967)ADSCrossRefGoogle Scholar
  21. R. F. Bis and J. N. Zemel, J. Appl. Phys., 37: 228 (1966)ADSCrossRefGoogle Scholar
  22. E. G. Bylander, Mater. Sci. Eng., Netherl., 1: 190–194 (1966)Google Scholar
  23. A. A. Machonis and I. B. Cadoff, Trans. AIME, 230: 333 (1964)Google Scholar
  24. H. Krebs, K. Grun, and D. Kallen, Z. Anorg. Allgem. Chem., 312: 307 (1961)CrossRefGoogle Scholar
  25. T. C. Harman, Mary C. Finn, and A. E. Paladino, (Lincoln Labs., Massachusetts Inst. of Tech.), ESD-TR-67–162 p. 6Google Scholar

Copyright information

© IFI/Plenum Data Corporation 1972

Authors and Affiliations

  • T. F. Connolly
    • 1
  1. 1.Research Materials Information Center, Solid State DivisionOak Ridge National LaboratoryOak RidgeUSA

Personalised recommendations