Advertisement

III-V Compounds

  • T. F. Connolly
Part of the Solid State Physics Literature Guides book series (SSPLG)

Keywords

Epitaxial Growth Gallium Arsenide Aluminum Nitride Gallium Nitride Yorktown Height 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

10.a. General, Reviews, and Bibliographies

  1. G. Bougnot, J. Chevrier, D. Etienne, and C. Bohe, Mat. Res. Bull., 6: 137–144 (1971)CrossRefGoogle Scholar
  2. David Brust, Solid State Commun., 9: 481–85 (1971)ADSCrossRefGoogle Scholar
  3. H. Wieder, J. Vacuum Sci. Tech., 8: 210–223 (1971)ADSCrossRefGoogle Scholar
  4. A. E. Attard, J. Phys. C: Solid State Phys., 3: 184–89 (1970)ADSCrossRefGoogle Scholar
  5. M. Cardona, W. Gudat, E. E. Koch, M. Sklbowski, B. Sonntag, and P. Y. Yu, Phys. Rev. Letters, 25: 659–661 (1970)ADSCrossRefGoogle Scholar
  6. H. C. Casey, Jr., and F. A. Trumbore, Mater. Sci. Eng., 6: 69–109 (1970)CrossRefGoogle Scholar
  7. A. Marcus Gray, Phys. Stat. Sol„ 37: 11–28 (1970)ADSCrossRefGoogle Scholar
  8. K. Hubner, Phys, Letters, 31A: 365–366 (1970)ADSCrossRefGoogle Scholar
  9. V. K. Jain and S. K. Sharma, Solid-State Electron., 13: 1145–1162 (1970)ADSCrossRefGoogle Scholar
  10. E. D. Jungbluth, Met. Trans., 1: 575–585 (1970)CrossRefGoogle Scholar
  11. H. M. Manasevit and A. C. Thorsen, Autonetics, Anaheim, Calif., NASA-CR-86408 (Jan. 1970), 102 pp.Google Scholar
  12. M. Neuberger, Electronics Properties Information Center, Hughes Aircraft Co., Culver City, Calif., DS-144 (Supp1. 6 ), Oct. 1970Google Scholar
  13. B. R. Pamplin, Contemp. Phys„ 11 (1): 1–19 (1970)ADSCrossRefGoogle Scholar
  14. J. J. Tietjen, R. Clough, R. Enstrom, M. Ettenberg, H. P. Maruska, et al., Radio Corp. of America, Princeton, N. J., ISR-3; NASA-CR110194 (April 1970), 34 pp.Google Scholar
  15. J. D. Wiley and M. DiDomenico, Phys. Rev., B, Solid State, 2: 427–433 (1970)ADSCrossRefGoogle Scholar
  16. Robert K. Willardson, Worth P. Allred, and James E. Cook, Bell and Howell Co., U. S. Patent 3,496,118 (Feb. 17, 1970 ) 8 pp.Google Scholar
  17. R, Banerjee and Y. P. Varshni, Canad. J. Phys., 47 (4): 451–462 (1969)Google Scholar
  18. A. R. Billings, J. Vacuum Sci. Tech., 6 (4): 757–765 (1969)ADSCrossRefGoogle Scholar
  19. N. M. Builova and V. B. Sandomirskii, Usp. Fiz. Nauk, 97: 119–192 (1969)Google Scholar
  20. N. M. Builova and V. B. Sandomirskii, Sov. Phys.—Usp., 12 (1): 64–69 (1969)ADSCrossRefGoogle Scholar
  21. C. V. Festenberg, Z. Phys., 227: 453–481 (1969)ADSCrossRefGoogle Scholar
  22. C. Flytzanis, Compt. Rend., B269 (8): 325–328 (1969)Google Scholar
  23. Chr. Flytzanis and J. Ducuing, Phys. Rev., 178: 1218–1228 (1969)ADSCrossRefGoogle Scholar
  24. T. K. Gaylord, P. L. Shah, and T. A. Tabson, Trans. IEEE Electron Devices, ED-16: 490–494 (1969)Google Scholar
  25. C. H. Gooch, Wiley-Interscience, New York (1969), 348 pp.Google Scholar
  26. J. J. Haggerty and J. F. Wenckus, Arthur D. Little, Inc., Cambridge, Mass. Contract NAS12–2020, NASA-CR-86308 (June 1969), 67 pp.Google Scholar
  27. S. E. R. Hiscocks and J. B. Mullin, J. Mater. Sci., 4: 962–973 (1969)ADSCrossRefGoogle Scholar
  28. J. K. Kubler, Phys. Stat. Sol., 35: 189–195 (1969)ADSCrossRefGoogle Scholar
  29. U. M. Kulish and A. P. Vyatkin, Rost Kristallov, Izd. Akad. Nauk, SSSR (1968), pp. 72–77 Growth of Crystals, Vol. 8 (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1969), pp. 59–62Google Scholar
  30. H. M. Manasevit and W. I. Simpson, J. Electrochem. Soc., 116: 1725 (1969)CrossRefGoogle Scholar
  31. L. I. Marina and A. Ya. Nashelskii, Russ. J. Phys. Chem., 43: 963–966 (1969)Google Scholar
  32. M. Neuberger, Hughes Aircraft Company, Culver City, California, Contract F33615–68-C-1225, Report No. S-13 (Dec. 1969), 92 pp. 394 refs.Google Scholar
  33. P. G. Rustamov, Z. D. Melikova, Ya. N. Nasirov, and M. A. Alidzhsaov, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (5): 881–884 (1969)Google Scholar
  34. P. G. Rustamov, Z. D. Melikova, Ya. N. Nasirov, and M. A. Alidzhsaov, Inorg. Mater., 5 (5): 750–752 (1969)Google Scholar
  35. D. G. Thomas, Brit. J. Appl. Phys., 2: 637–654 (1969)Google Scholar
  36. J. J. Ttetjan, R. Clough, A. B. Dreeben, R. Enstrom, and D. Richman, RCA, Princeton, New Jersey, Contract NAS12–538, NASACR-86192; ISR-2 (March 1969), 29 pp.Google Scholar
  37. J. E. Wardill and D. J. Dowling, Chem. Britain, 5 (5): 226–228 (1969)Google Scholar
  38. W. Michael Yim, J. Appl. Phys., 40: 2617–2624 (1969)ADSCrossRefGoogle Scholar
  39. R. J. Caveney, Phil. Mag., 17: 943–950 (1968)ADSCrossRefGoogle Scholar
  40. P. J. Dean, Trans. AIME, 242: 384–400 (1968)Google Scholar
  41. J. Frey, Atomic Energy Research Establishment, Harwell, England, AERE-R 5757 (March 1968)Google Scholar
  42. T. K. Gaylord, P. L. Shah, and T. A. Tabson, Trans. IEEE Electron Devices, ED-15: 777–788 (1968).Google Scholar
  43. A. Lawley, Techniques of Metals Research, Vol. 1, Part 2, Techniques of Materials and Handling (R. F. Bunsbah, ed.), Inter-science Publishers, New York (1968), pp. 8451–8920Google Scholar
  44. J. B. Mullin, R. J. Heritage, C. H. Holliday, and B. W. Straughan, J. Crystal Growth, 3 (4): 281–285 (1968)ADSCrossRefGoogle Scholar
  45. M. Neuberger, Electronic Properties Information Center, Hughes Aircraft Co., Culver City, Calif., Contract AF 33(616)-8438, Project 7381, Task 738103, DS-121 (Feb. 1963) 2nd edition, DS-121 (Dec. 1965); also 2nd edition, Suppl. 1 (June 1968)Google Scholar
  46. R. K. Willardson and A. C. Beer, eds., Academic Press, New York (1968), 511 pp.Google Scholar
  47. David W. Yarbrough, U. S. Govt. Res. Develop. Rept. 68:162 (1968); Ad-670014, 69 ppGoogle Scholar
  48. Louis G. Bailey, Trans. AIME, 239: 310 (1967)Google Scholar
  49. R. H. Bube, Semiconductors and Semimetals. III. Optical Properties of III— V Compounds (R. K. Willardson and A. C. Beer, eds.), Academic Press, New York (1967), pp. 461–495Google Scholar
  50. R. Cadoret and J. C. Monier, J. Crystal Growth, 1: 59–66 (1967)ADSCrossRefGoogle Scholar
  51. N. P. Sazhin, N. Kh. Abrikosov, N. P. Luzhnaya, and E. G. Ippolitov, Razv. Obshch., Neorg. Anal. Khtm. SSSR, 1917–1967, Akad. Nauk SSSR, Inst. Istor, Estestvozn. Tekh., 214–223 (1967)Google Scholar
  52. R. C. Taylor, IBM Corp., Yorktown Heights, N. Y., NC-684 (Jan. 1967)Google Scholar
  53. S. D. Gromakov, Z. M. Latypov, and P. S. Kirilyuk, Russian J. Phys. Chem., 40 (6): 677 (1966)Google Scholar
  54. E. W. Mehal and G. R. Cronin, Electrochem. Tech., 4: 540 (1966)Google Scholar
  55. M. Neuberger, Electronic Properties Information Center, Hughes Aircraft Co., Culver City, Calif., EPIC Interim Report IR-23 (March 1966)Google Scholar
  56. Alois A. Slepicka, Master’s thesis, Naval Postgraduate School, Monterey, Calif., AD-800479 (May 1966), 74 pp.Google Scholar
  57. Ireneusz Wojcik, Przegl. Elektron., 7 (12): 584–595 (1966)Google Scholar
  58. C. Hilsum, Progress in Semiconductors, Vol. 9 (A. F. Gibson and R. E. Burgess, eds.), Heywood Book, Temple Press Books Ltd., London (1965), pp. 135–178Google Scholar
  59. T. S. Moss, Reports on Progress in Physics, Vol. XXVIII (A. C. Stickland, ed.), The Institute of Physics and the Physical Society, 47 Belgrave Square, London (1965), pp. 41–51Google Scholar
  60. John L. Richards, Philco Corp., Blue Bell, Penn., Contract AF 19(628)-2937, AFCRL-65–412; A049-Final Sc Rpt (April 30, 1965 ), 80 pp.Google Scholar
  61. D. L. Stierwalt and R. F. Potter, Naval Ordnance Lab., Corona, Calif., Task R360–FR104/211–1/R001–O1–01, NASA–W–11–400–B, Rept. No. NOLC–630; AD–626411 (Nov. 1965), 32 pp.Google Scholar
  62. J. W. Faust, Jr., and H. F. John, J. Phys. Chem. Solids, 25: 1407–1415 (1964)ADSCrossRefGoogle Scholar
  63. G. R. Cronin, Morton E. Jones, and O. Wilson, J. Electrochem. Soc., 110: 582–584 (1963)CrossRefGoogle Scholar
  64. M. J. Pool, R. W. Sullivan, and C. E. Lundin, Denver Research Institute, Univ. of Denver, Colorado, Contract AF 19(604)-7222, Project 4608, AFCRL-63–156 (May 1963)Google Scholar
  65. R, H. Rediker and T. M. Quist, Solid-State Electron., 6: 657–665 (1963)ADSCrossRefGoogle Scholar
  66. Gallium Pierre de la Breteque Société Françaisepour l’Industrie de l’Aluminium, Marseille and Aluminium Suisse S A, Zurich et Neuhausen, Switzerland (1968) 6th Suppl. to bibi. published in 1962Google Scholar
  67. K. F. Hulme and J. B. Mullin, Solid-State Electron., 5: 211–247 (1962)ADSCrossRefGoogle Scholar
  68. R. K. Willardson and H. L. Goering, (Reinhold, 1962), 553 pp. Contains bibliography by R. C. Sangster, pp. 509–548, 1172 refs., catalogued by compoundGoogle Scholar
  69. Metallurgy of Elemental and Compound Semiconductors, Proceedings of a Technical Conference, Boston, Massachusetts, August 29–31, 1960, Vol. 12 (Ralph O. Grubel, ed.), Interscience Publishers, New York (1961), pp. 303–380Google Scholar
  70. C. lithium and A. C. Rose-Iimes, Pergamon Press (1961), 239 pp.Google Scholar
  71. L. R. Weisberg, F. D. Rosi, and P. G. Herkart, Properties of Elemental and Compound Semiconductors, Vol. 5, Interscience Publishers, New York (1960), pp. 25–67Google Scholar
  72. O. G. Folberth and H. Welker, J. Phys. Chem. Solids, 8: 14–20 (1959)ADSCrossRefGoogle Scholar
  73. H. T. Minden, Semicond. Prod., 2: 30–42 (Feb. 1959)Google Scholar
  74. M. E. Tanner, H. C. Gorton, and R. K. Willardson, Battelle Memorial Institute, 505 King Avenue, Columbus, Ohio, Technical Memorandum No. 1 Consists of refs. to pertinent literature through 1957Google Scholar

10.b. Boron Compounds

  1. K. E. Maass, Z. Anorg. Allgem. Chem., 374(1):1–10(1970)Google Scholar
  2. N. E. Filonenko, T. P. Nikitina, and N. M. Kamentseva, Dokl. Akad. Nauk, 187 (3): 569–570 (1969)Google Scholar
  3. G. N. Bezrukov, V. P. Butuzov, T. P. Nikitina, et al., Dokl. Akad. Nauk SSSR, 179: 1326–1328 (1968)Google Scholar
  4. A. S. Bolger, S. P. Gordienko, E. A. Ryklis, and V. V. Fesenko, Chemistry and Physics of the Nitrides, Naukova Dumka, Kiev (1968), pp. 151–156Google Scholar
  5. N. E. Filonenko, G. M. Zaretskaya, N. M. Kamentseva, et al., Dokl. Akad. Nauk SSSR, 179 (1): 88–89 (1968)Google Scholar
  6. V. K. Kazakov, Chemistry and Physics of the Nitrides, Naukova Dumka, Kiev (1968), pp. 121–129Google Scholar
  7. M. J. Rand and J. F. Roberts, J. Electrochem. Soc., 115: 423 (1968)CrossRefGoogle Scholar
  8. L. F. Vereshchagin, E. V. Zubova, L. N. Burenkova, and N. I. Revin, Dokl. Akad. Nauk SSSR, 178 (1): 72–73 (1968)Google Scholar
  9. L. F. Vereshchagin, E. V. Zubova, L. N. Burenkova, and N. I. Revin, Soy. Phys. — Dokl., 13 (1): 25–26 (1968)ADSGoogle Scholar
  10. C. E. Frahme, (Rutgers State Univ., New Brunswick, N. J.), Dissertation Abstr., 28 (3): 885 (1967)Google Scholar
  11. P. Gross, C. Hayman, and M. C. Stuart, Proc. Brit. Ceram. Soc., 8: 39–50 (1967)Google Scholar
  12. R. L. Heestand, D. W. Short, and W. C. Robinson, (Oak Ridge National Lab., Tenn.), Proceedings of the Conference on Chemical Vapor Deposition of Refractory Metals, Alloys, and Compounds (A. C. Schaffhauser, ed.), Gatlin-burg, Tenn., Sept. 12–14, 1967, American Nuclear Soc., Inc., Hinsdale, Ill. (1967), pp. 175–191Google Scholar
  13. H. Tagawa and K. Ishii, Denkt Kagaku, 35 (1): 50–53 (1967)Google Scholar
  14. K. Kudaka, H. Konno, and T. Matoba, J. Chem. Soc. Japan, 69: 365 (1966)Google Scholar
  15. W. E. Kuhn, Electrochem. Tech., 4: 166 (1966)Google Scholar
  16. David G. McMaster, U. S. Army Electronics Command, Fort Monmouth, New Jersey, Tech. Rept. ECOM-2681 (March 1966)Google Scholar
  17. P. C. Li, A. J. Capriulo, and M. P. Lepie, Vol. 1A, Proc. of OSU-RTD Symposium on Electromagnetic Windows, Dept. of Electrical Engineering, Ohio State University, Columbus, Ohio (June 1964)Google Scholar
  18. Wacker-Chemie GmbH, British Patent 968,590 (Sept. 2, 1964 )Google Scholar
  19. F. P. Bundy and R. H. Wentorf, Jr., J. Chem. Phys., 38: 1144 (1963)ADSCrossRefGoogle Scholar
  20. R. H. Wentorf, Jr., J. Chem. Phys., 36: 1990 (1962)Google Scholar
  21. R. H. Wentorf, Jr., J. Chem. Phys., 34: 809 (1961)ADSCrossRefGoogle Scholar
  22. H. J. Milledge, E. Nave, and F. H. Weller, Nature, 184: 715 (1959)ADSCrossRefGoogle Scholar
  23. V. D. Romanov, G. V. Samsonov, and D. I. Nikitin, USSR Patent 120,509 (June 19, 1959 )Google Scholar
  24. R. C. Vickery, Nature, 184: 268 (1959)ADSCrossRefGoogle Scholar
  25. Siemens and Halske, British Patent 806,697 (Dec. 31, 1958 )Google Scholar
  26. A. R. Globus, United International Research, Inc., U. S. Patent 2,812,240 (Nov. 5, 1957 )Google Scholar
  27. K. M. Taylor, Ind. Eng. Chem., 47: 2506 (1955)CrossRefGoogle Scholar
  28. G. R. Finlay and G. H. Fetterley, Am. Ceram. Soc. Bull., 31: 141 (1952)Google Scholar
  29. I. C. Montemartini and L. Losana, Giorn. Chim. Ind. Ed. Appl., 6:323 (1924)Google Scholar
  30. A. R. Lindblad, U. S. Patent 1,311,568 (July 29, 1919 )Google Scholar
  31. T. L. Chu, J. M. Jackson, A. E. Hyslop, and S. C. Chu, J. Appl. Phys., 42: 420–424 (1971)ADSCrossRefGoogle Scholar
  32. Z. S. Medvedeva, J. H. Greenberg, and E. G. Zhukov, Krist. Tech., 4 (4): 487–493 (1969)CrossRefGoogle Scholar
  33. Alton F. Armington, J. Cryst. Growth, 1: 47–48 (1967)ADSCrossRefGoogle Scholar
  34. B. V. Baranov, V. D. Prochukhan, and N. A. Goryunova, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (9): 1691–1692 (1967)Google Scholar
  35. B. V. Baranov, V. D. Prochukhan, and N. A. Goryunova, Inorg. Mater., 3 (9): 1477–1478 (1967)Google Scholar
  36. Z. S. Medvedeva, Ya. Kh. Grinberg, E. G. Zhukov, and N. P. Luzhnaya, Krist. Tech., 2 (4): 523–534 (1967)CrossRefGoogle Scholar
  37. I. A. Goryunova, B. V. Baranov, and V. D. Prochukhan, A. F. Ioffe, Phys. Tech. Inst., USSR Patent 185,087 (July 30, 1966 )Google Scholar
  38. Edward T. Peters, Irita Grierson, and S. A. Kulin, AFCRL-66–132 (Feb. 1966), Contract AF19 (628)-2438Google Scholar
  39. Ya. Kh. Grinberg, Z. S. Medvedeva, A. A. Eliseev, and E. G. Zhukov, Dokl. Akad. Nauk SSSR, 160 (2): 337 (1965)Google Scholar
  40. Ya. Kh. Grinberg, Z. S. Medvedeva, A. A. Eliseev, and E. G. Zhukov, Sov. Phys. — Dokl., 10 (1): 6 (1965)ADSGoogle Scholar
  41. Ya. Kh. Grinberg, Z. S. Medvedeva, and L. A. Klinkova, Izv. Akad. Nauk SSSR, Neorg. Mater., 1 (4): 478–479 (1965)Google Scholar
  42. Ya. Kh. Grinberg, Z. S. Medvedeva, and L. A. Klinkova, Inorg. Mater., 1 (4): 440–441 (1965)Google Scholar
  43. James L. Peret, J. Am. Ceram. Soc., 47: 44 (1964)CrossRefGoogle Scholar
  44. C. C. Wang, M. Cardona, and A. G. Fischer, RCA Review, 25 (2): 159–167 (1964)Google Scholar
  45. G. V. Samsonov and Y. B. Tithov, Russian J. Appl. Chem., 36: 669 (1963)Google Scholar
  46. D. Stone and Robert A. Ruehrwein, Monsanto Chemical, U. S. Patent 3,073,670 (Jan. 15, 1963 )Google Scholar
  47. B. D. Stone, U. S. Patent 3,009, 780 (1961)Google Scholar
  48. E. S. Greiner, Boron, Vol. 2, Synthesis, Structure, and Properties Proceedings of the Conference on Boron sponsored by the Institute for Exploratory Research, U. S. Army Signal Research and Development Laboratory, Fort Monmouth, N. J. (J. A. Kohn, W. F. Nye, and G. K. Gaulé, eds.), Plenum Press, New York (1960)Google Scholar
  49. F. V. Williams and R. A. Ruehrwein, J. Am. Chem. Soc., 82: 1330 (1960)CrossRefGoogle Scholar
  50. B. Stone and D. Hill, Bull. Am. Phys. Soc., Ser. II, 4:408(A) (Nov. 27, 1959 )Google Scholar
  51. K. Vickery, Nature, 184:268 (July 25, 1959 )Google Scholar
  52. P. Popper and T. A. Ingles, Nature, 179:1075 (May 25, 1957 )Google Scholar
  53. Alton F. Armington, J. Crystal Growth, 1: 47–48 (1967)ADSCrossRefGoogle Scholar
  54. S. M. Ku, J. Electrochem. Soc., 113: 813 (1966)CrossRefGoogle Scholar
  55. F. V. Williams, Monsanto Company, U. S. Patent 3,413,092 (July 21, 1958 )Google Scholar
  56. 10.
    c. Aluminum CompoundsGoogle Scholar
  57. D. W. Lewis, J. Electrochem. Soc., 117: 978–982 (1970)CrossRefGoogle Scholar
  58. B. Hejda and K. Hauptmanova, Phys. Sta. Sol., 36:1(95–99 (1969)Google Scholar
  59. M. D. Lyutaya, I. G. Chernysh, and Z. A. Yaremenko, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (11): 1929–1932 (1969)Google Scholar
  60. M. D. Lyutaya, I. G. Chernysh, and Z. A. Yaremenko, Inorg. Mater., 5 (11): 1642–1644 (1969)Google Scholar
  61. N. F. Foster, 6th Sendai Symp. Acoustoelectron. (1968), pp. 11–20Google Scholar
  62. Osamu Matsumoto, J. Electrochem. Soc. Japan, 36: 207–212 (1968)Google Scholar
  63. T. L. Chu, D. W. Ing, and A. J. Noreika, Solid-State Electron., 10: 1023–1027 (1967)ADSCrossRefGoogle Scholar
  64. A. T. Collins, E. C. Lightowlers, and P. J. Dean, Phys. Rev., 158: 833 (1967)ADSCrossRefGoogle Scholar
  65. G. A. Cox, D. O. Cummins, K. Kawabe, and R. H. Tredgold, J. Phys. Chem. Solids, 28: 543 (1967)ADSCrossRefGoogle Scholar
  66. K. Kawabe, R. H. Tredgold, and Y. Inuishi, Electron. Eng. (Japan), 87: 62–70 (1967)Google Scholar
  67. K. Kawabe, K. Yoshino, and Y. Inuishi, J. Phys. Soc. Japan, 21: 1604 (1966)ADSCrossRefGoogle Scholar
  68. D. W. Lewis, D. E. Sestrich, J. N. Esposito, T. W. Dakin, and D. Berg, Westinghouse Research Labs., Pittsburgh, Pa., Annual summary report - June 1968 to June 1966, Contract AF 33(615)-2782, AFML-TR-66–320, Pt. 1 (July 1966)Google Scholar
  69. T. J. Davies and P. E. Evans, Nature, 207: 254–255 (1965)ADSCrossRefGoogle Scholar
  70. J. Edwards, K. Kawabe, G. Stevens, and R. H. Tredgold, Solid State Commun., 3: 99–100 (1965)ADSCrossRefGoogle Scholar
  71. J. Pastrnak and L. Roskovcova, Phys. Stat. Sol., 9: K73 (1965)ADSCrossRefGoogle Scholar
  72. M. L Prikhod’ko, Vestn. Kiev Politekhn. Inst., Mekhan. -tekhnol., 2: 59–63 (1965)Google Scholar
  73. N. M. Sisakyan, Vestn. Akad. Nauk SSSR, 3: 52–53 (1965)Google Scholar
  74. T. V. Andreeva, I. G. Barantseva, E. M. Dudnik, and V. L. Yupko, High Temp. (English Transi.), 2: 742–744 (1964)Google Scholar
  75. J. Pastrnak and L. Roskovcova, Phys. Stat. Sol., 7: 331 (1964)ADSCrossRefGoogle Scholar
  76. R. H. Tredgold, NASA Accession No. N65–16148, AD-451467 (Sept. 1964)Google Scholar
  77. A. M. Lejus, J. Thery, J. C. Gilles, and R. Collongues, Compt. Rend., 257: 157 (1963)Google Scholar
  78. A. Rabenau, Compound Semiconductors — Preparation of III—V Compounds (R. K. Willardson and H. L. Goering, eds.), Reinhold Publishing Co., New York (1962), pp. 174–180Google Scholar
  79. Arrigo Addamiano, J. Electrochem. Soc., 108: 1072 (1961)CrossRefGoogle Scholar
  80. W. Kleber and H. D. Witzke, UCRL-Trans-882(L); trans. from: Z. Krist., 116: 126–133 (1961)Google Scholar
  81. T. Matsumura and Y. Tanabe, J. Phys. Soc. Japan, 15: 203 (1960)ADSCrossRefGoogle Scholar
  82. K. M. Taylor and Camille Lenie, J. Electrochem. Soc., 107: 308 (1960)CrossRefGoogle Scholar
  83. J. A. Kohn, P. G. Cotter, and R. A. Potter, Am. Mineralogist, 41: 355–359 (1956)Google Scholar
  84. Charles M. Drum, Dissertation Abstr., 64–703, 195 pp., University Microfilms, Ann Arbor, Mich.Google Scholar
  85. M. B. Panish, R. T. Lynch, and S. Sumski, Trans. Met. Soc. AIME, 245: 559 (1969)Google Scholar
  86. Hajimu Sonomura and Takeshi Miyauchi, Japan. J. Appl. Phys., 8: 1263 (1969)ADSCrossRefGoogle Scholar
  87. R. D. Baxter, E. P. Stambaugh, and F. J. Reid, Battelle Mem. Inst., Columbus, Ohio, Electronic Res. Center, NASA-CR-86043 (Jan. 1968), Contract NAS 12–107Google Scholar
  88. D. Richman, J. Electrochem. Soc., 115: 945–947 (1968)CrossRefGoogle Scholar
  89. M. Rubenstein and R. Mazelsky, AD-667 249, March 28, 1968, Contract NObs-94326 (Westinghouse Res. Labs., Pittsburgh, Pa. )Google Scholar
  90. Z. Beer, Trans. Met. Soc. AIME, 242: 424 (1968)Google Scholar
  91. Z. Beer, Part II, Trans. Met Soc. AIME, 242: 428 (1968)Google Scholar
  92. F. J. Reid, S. E. Miller, and H. L. Goering, J. Electrochem. Soc., 113: 467 (1966)CrossRefGoogle Scholar
  93. J. M. Woodall, J. Electrochem. Soc., 118: 150–152 (1971)CrossRefGoogle Scholar
  94. Zh. I. Alferov, V. M. Andreev, V. I. Murygin, and V. I. Stremin, Fiz. Tekhn. Poluprovód., 3 (10): 1470–1477 (1969)Google Scholar
  95. Zh. I. Alferov, V. M. Andreev, V. I. Murygin, and V. I. Stremin, Sov. Phys. — Semicond., 3 (10): 1234–1239 (1970)Google Scholar
  96. R. D. Burnham, N Holonyak, Jr., and D. R. Scifres, Appl. Phys. Letters, 17: 455–457 (1970)ADSGoogle Scholar
  97. M. B. Panish, R. T. Lynch, and S. Sumski, Trans. Met. Soc. AIME, 245: 559 (1969)Google Scholar
  98. A. A. Pavlyuk, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (7): 1103 (1969)Google Scholar
  99. A. A. Pavlyuk, Inorg. Mater., 5 (7): 1295 (1969)Google Scholar
  100. J. J. Tietjen, R. Clough, R. E. Enstrom, and M. Ettenberg, Radio Corp. of America, Princeton, N. J., Contract NAS12–538 NASA-CR-86306 (Sept. 1969), 14 pp.Google Scholar
  101. A. J. Noreika et al., Westinghouse Electric Corp., Pittsburgh, Pa., Interim Rept. June 1967-Nov. 1968, Contract NAS12–568, N69 22975 (Dec. 1968), 127 pp.Google Scholar
  102. A. A. Pavlyuk and N. N. Vertoprakhov, Izv. Sibirsk. Otd. Akad. Nauk SSSR, Khim. Nauk, No. 5, 130132 (1968)Google Scholar
  103. R. Cadoret and J. C. Monier, J. Crystal Growth, 1: 59–66 (1967)ADSCrossRefGoogle Scholar
  104. T. D. Dzhafarov, M. I. Stepanova, and V. K. Subashiev, Fix. Tekhn. Poluprovod., 1 (9): 1306–1310 (1967)Google Scholar
  105. T. D. Dzhafarov, M. I. Stepanova, and V. K. Subashiev, Soy, Phys. —Semicond., 1 (9): 1087–1090 (1968)Google Scholar
  106. J. F. Black and S. M. Ku, J. Electrochem. Soc., 113: 249 (1966)CrossRefGoogle Scholar
  107. J. P. David, L. Capella, L. Laude, and S. Marttnuzzi, Rev. Phys. Appl., 1: 172 (1966)CrossRefGoogle Scholar
  108. M. S. Mirgalovskaya, E. V. Skudnova, and I. A. Strel’nikova, Solid State Transformations N. N. Sirota, F. K. Gorskii, and V. M. Varikash, eds.), Consultants Bureau, New York (1966), pp. 77–81Google Scholar
  109. J. Whitaker, Solid-State Electron., 8: 649–652 (1965)ADSCrossRefGoogle Scholar
  110. D. E. Ehill and R. I. Stearns, Monsanto Research Corp., Everett, Mass., AD 610 629 (June 1964)Google Scholar
  111. W. Kischio, Z. Anorg. Allgem. Chem., 328: 187–193 (1964)CrossRefGoogle Scholar
  112. D. E. Bolger and B. E. Barry, Nature, 199: 1287 (1963)ADSCrossRefGoogle Scholar
  113. M. S. Mirgalovskaya and L A. Strel’nikova, Sov. Phys. — Solid State 3: 332 (1961)Google Scholar
  114. W. P. Allred, W. L. Mefferd, and R. K. Willardson, J. Electrochem. Soc., 107: 117–122 (1960)CrossRefGoogle Scholar
  115. W. P. Allred, W. L. Mefferd, and R. K. Willardson, Battelle Memorial Institute; 1959 Spring Meeting Electrochem. Soc.Google Scholar
  116. W. P. Allred, Bernard Paris, and M. Genser, J. Electrochem. Soc., 105: 93–96 (1958)CrossRefGoogle Scholar
  117. Werner Koster and Werner Ulrich, Stuttgart, Z. Metailk., 49: 365–367 (1958)Google Scholar
  118. Hans Achim Schell, Z. Metallk., 49: 140–144 (1958)Google Scholar

10.d. Gallium Compounds

  1. K. R. Faulkner, D. K, Wickenden, B. J. Isherwood, B. P. Richards, and I. H. Scobey, J. Mater. Sci., 5: 308–313 (1970)ADSCrossRefGoogle Scholar
  2. B. J. Isherwood and D. K. Wickenden, J. Mater, Sci., 5: 869–872 (1970)ADSCrossRefGoogle Scholar
  3. D. D. Manchon, Jr., A. S. Barker, Jr., P. J. Dean, and R. B. Zetterstrom, Solid State Commun., 8: 1227–1231 (1970)ADSGoogle Scholar
  4. R. B. Zetterstrom, J. Mater. Sci., 5: 1102–1104 (1970)ADSCrossRefGoogle Scholar
  5. H. P. Maruska and J. J. Tietjen, Appl. Phys. Letters, 15: 327 (1969)ADSCrossRefGoogle Scholar
  6. J. J. Tietjen, R. Clough, A. B. Dreeben, R. Enstrom, and D. Richman, RCA, Princeton, N. J., Contract NAS12–538, NASA-CR86192; ISR-2 (March 1969), 29 pp.Google Scholar
  7. A. Rabenau, Compound Semiconductors — Preparation of III— V Compounds, Reinhold, New York (1962) Crystal growth reviewed; 23 refs.Google Scholar
  8. A. Mottram, A. R. Peaker, and P. D. Sudlow, J. Electrochem. Soc., 118: 318–324 (1971)CrossRefGoogle Scholar
  9. S. F. Nygren, C. M. Ringel, and H. W. Verleur, J. Electrochem. Soc., 118: 306–312 (1971)CrossRefGoogle Scholar
  10. A. Y. Cho, J. Appl. Phys., 41 (2): 782–786 (1970)ADSCrossRefGoogle Scholar
  11. A. Y. Cho and Y. S. Chen, Solid State Commun., 8: 377–379 (1970)ADSCrossRefGoogle Scholar
  12. V. M. Grachev and L. I. Marina, Kristallografiya, 15 (2): 392–393 (1970)Google Scholar
  13. V. M. Grachev and L. I. Marina, Sov. Phys. — Cryst., 15 (2): 337–338 (1970)Google Scholar
  14. W. H. Hackett, Jr., R. H. Saul, H. W. Verleur, and S. J. Bass, Appl. Phys. Letters, 16(12) (June 15, 1970 )Google Scholar
  15. Iu. L. Il’in, V. S. Sorokin, and D. A. Iaskov, Izv. Akad. Nauk, SSSR Neorg. Mater., 6 (3): 447–451 (1970)Google Scholar
  16. Iu. L. Il’in, V. S. Sorokin, and D. A. Iaskov, Inorg. Mater., 6 (3): 392–395 (1970)Google Scholar
  17. L. C. Luther, Met. Trans., 1: 593–601 (1970)CrossRefGoogle Scholar
  18. R. H. Saul and W. H. Hackett, J. Electrochem. Soc., 117: 921–924 (1970)CrossRefGoogle Scholar
  19. J. J. Cuomo and R. J. Gambino, J. Electrochem. Soc., 116: 874 (1969)Google Scholar
  20. L. M. Foster and J. Scardefield, J. Electrochem. Soc., 116: 494–498 (1969)CrossRefGoogle Scholar
  21. N. A. Goryunova, S. L. Pyshkin, A. S. Borshchevskii, S. I. Radautsian, et al., Rost Kristallov, Izd. Akad. Nauk, SSSR (1968), pp. 84–89 Growth of Crystals, Vol. 8 (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1969), pp. 68–72Google Scholar
  22. R. S. Ignatkina, I. A. Kucherenko, S. S. Meskin, V. N. Ravich, B. V. Tsarenkov, and E. G. Shevchenko, Fiz. Tekhn. Poluprovod., 2 (9): 1259–1265 (1968)Google Scholar
  23. R. S. Ignatkina, I. A. Kucherenko, S. S. Meskin, V. N. Ravich, B. V. Tsarenkov, and E. G. Shevchenko, Soy. Phys. — Semicond., 2 (9): 1057–1061 (1969)Google Scholar
  24. Akinobu Kasami, Makoto Naito, Masaharu Toyama, and Keiji Maeda, Japan. J. Appl. Phys., 8: 1469–1480 (1969)ADSCrossRefGoogle Scholar
  25. H. M. Manasevit and W. I. Simpson, J. Electrochem. Soc., 116: 1725–1732 (1969)CrossRefGoogle Scholar
  26. T. S. Plaskett, IBM Research Div., Yorktown Heights, N. Y., RC 2529 (No. 12165), July 2, 1969Google Scholar
  27. Starting material for large single crystals Also: J. Electrochem. Soc., 116: 1722–1725 (1969)Google Scholar
  28. R. H. Saul, J. Appl. Phys., 40: 3273 (1969)ADSCrossRefGoogle Scholar
  29. R. W. Thomas, J. Electrochem. Soc., 116: 1449 (1969)CrossRefGoogle Scholar
  30. Masaharu Toyama, Makoto Naito, and Akinobu Kasami, Japan. J. Appl. Phys., 8: 358 (1969)ADSCrossRefGoogle Scholar
  31. J. A. W. van der Does de Bye and R. C. Peters, Philips Res. Repts., 24: 210–230 (1969)Google Scholar
  32. J. P. Besselere and J. M. Leduc, Mater. Res. Bull., 3: 797–806 (1968)CrossRefGoogle Scholar
  33. Walter Brenner and Yoshiyuki Okamoto, New York University, New York, N. Y., AD-674766 (1968), 232 pp.Google Scholar
  34. R. J. Dean, C. J. Frosch, and C. H. Henry, J. Appl. Phys., 39: 5631 (1968)ADSCrossRefGoogle Scholar
  35. Ferranti, Ltd., England, AD-845 517 (Dec. 1968), 54 pp.Google Scholar
  36. L. M. Foster, J. F. Woods, and J. E. Lewis, International Business Machines, Research Div., Y orktown Heights, N. Y., preprint RC 2227 (No. 11071), Oct. 2, 1968Google Scholar
  37. L. I. Marina, A. Ya. Nashel’skii, and B. A. Sakharov, Izv. Akad. Nauk SSSR, Neorg. Mater, 4(90467–1470 (1968) Inorg. Mater., 4 (9): 1283–1285 (1968)Google Scholar
  38. R. K. Purohit, J. Materials Sci., 3: 330–332 (1968)ADSCrossRefGoogle Scholar
  39. R. C. Taylor, J. F. Woods, and M. R. Lorenz, IBM Corp., Research Div., Yorktown Heights, New York, RC-2093 (#10628), May 15, 1968Google Scholar
  40. R. C. Taylor, J. F. Woods, and M. R. Lorenz, J. Appl. Phys., 39: 5404 (1968)ADSCrossRefGoogle Scholar
  41. W. Westerveld and W. P. De Graaf, North American Philips Co., U. S. Patent 3,394,085 (appl. Neth., Aug. 29, 1964; pubi. July 23, 1968 )Google Scholar
  42. D. R. Wight, J. Phys. C (Proc. Phys. Soc.), Ser. 2, 1: 1759–1767 (1968)ADSCrossRefGoogle Scholar
  43. Louis G. Bailey, Trans. AIME, 239: 310 (1967)Google Scholar
  44. Yu. L. H’in and D. A. Yaskov, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (2):296–300 (1967) Inorg. Mater., 3 (2): 264–266 (1967)Google Scholar
  45. R. Kern and B. Simon, Acta Met., 15: 911–920 (1967)CrossRefGoogle Scholar
  46. Douglas Henry Loescher, Stanford Univ., California, Ph. D. thesis (1967), 72 pp. University Microfilms, Ann Arbor, Mich., No. 67–7945 Epitaxial single crystals of GaP doped with either sulfur or zincGoogle Scholar
  47. G. L. Pearson, Stanford University, Solid State Electronic Lab., Quarterly Prog. Rept., N67–40312 (Sept. 30, 1967 ), 20 pp.Google Scholar
  48. H. Scholz, Philips Tech. Rev., 28: 220 (1967)Google Scholar
  49. H. Seki and H. Araki, Japan. J. Appl. Phys., 6: 1414–1418 (1967)ADSCrossRefGoogle Scholar
  50. Peter R. Wagner, Electrochem. Tech., 5: 64 (1967)Google Scholar
  51. Zh. I. Alferov, V. I. Korolkov, M. K. Trukan, and S. P. Chashchin, Krist. Tech., 1 (2): 205–211 (1966)CrossRefGoogle Scholar
  52. J. W. Burd and W. O. Groues, Monsanto Co., French Patent 1,509,254 (Jan. 12, 1968 ); U. S. appl. Jan. 3, 1966 - Dec. 16, 1966, 23 pp.Google Scholar
  53. O. G. Folberth, Siemens-Schuckertwerke AG, German Patent 1,219,241 appl. July 1960; publ. June 16, 1966 ), 2 pp.Google Scholar
  54. N. A. Goryunova, A. S. Borshchevskii, G. A. Kalyuzhnaya, A. D. Smirnova, and N. K. Takhtareva, Krist. Tech., 1 (1): 85–91 (1966)CrossRefGoogle Scholar
  55. E. W. Mehal and G. R. Cronin, Electrochem. Tech., 4: 540 (1966)Google Scholar
  56. S. L. Pyskin, A. S. Borscevskij, S. I. Radaucan, G. A. Kaljuznaja, and Ju. I. Maksimov, Acta Cryst. (Internat.) 21, Pt. 7, Suppl., A242 (Dec. 1966 ) Seventh International Congress and Symposium International Union of Crystallography, Moscow (1966)Google Scholar
  57. B. Schwartz, Vapor Deposition, John Wiley and Sons, Inc., New York (1966), p. 612Google Scholar
  58. H. Sonomura, N. Yamamoto, and T. Miyauchi, Bull. Univ. Osaka Prefecture, Ser. A, 15: 91 (1966)Google Scholar
  59. F. A. Trumbore, M. Gershenzon, and D. G. Thomas, Appl. Phys. Letters, 9: 4 (1966)ADSCrossRefGoogle Scholar
  60. T. Arizumi and T. Nishinaga, J. Appl. Phys., 4: 165 (1965)CrossRefGoogle Scholar
  61. E. F. Hockings and H. W. Leverenz, RCA Labs., David Sarnoff Research Center, Princeton, N. J., Tech. Rept. No. 4; AD-475 116 (1965), 95 pp.Google Scholar
  62. A. Rabenau, Philips Tech. Rev., 26: 117 (1965)Google Scholar
  63. Ya. A. Ugai and O. Ya. Gukov, Izv. Akad. Nauk SSSR, 1 (6): 857–860 (1965)Google Scholar
  64. Ya. A. Ugai and O. Ya. Gukov, Inorg. Mater., 1 (6): 787–789 (1965)Google Scholar
  65. H. Flicker, B. Goldstein, and P. A. Hoss, J. Appl. Phys., 35: 2959 (1964)ADSCrossRefGoogle Scholar
  66. M. Gershenzon and R. M. Mikulyak, J. Appl. Phys., 35: 2132 (1964)ADSCrossRefGoogle Scholar
  67. W. O. Groves and A. S. Epstein, Monsanto Research Corp., Dayton, Ohio, Qtr. Rept. No. 3, Dec. 1963-Apr. 1964, NASA Contract NAS3–2776, NASA CR-53986 (1964), 52 pp.Google Scholar
  68. N. Holonyak, Trans. AIME, 230: 276–281 (1964)Google Scholar
  69. W. Krieglstein, H. Pfister, and G. Ziegler, Z. Angew. Phys., 17: 295 (1964)Google Scholar
  70. A. Ya. Nashelskii, L. I. Marina, and S. V. Yakobson, U. S. S. R. Patent 163,362 (appl. Feb. 1962; pubi. July 1964 )Google Scholar
  71. A. Pfahnl, J. Electrochem. Soc., 111: 58C (1964)Google Scholar
  72. D. G. Thomas, M. Gershenzon, and F. A. Trumbore, Phys. Rev., 133: A269 (1964)ADSCrossRefGoogle Scholar
  73. C. D. Thurmond and C. J. Frosch, J. Electrochem. Soc., 111: 184 (1964)CrossRefGoogle Scholar
  74. M. Weinstein and A. I. Mlaysky, J. Appl. Phys., 35: 1892–1894 (1964)ADSCrossRefGoogle Scholar
  75. L. R. Weisberg and E. A. Miller, Synthesis and characterization of electronically active materials, RCA Labs. Tech. Rept. No. 1 covering period May 15, 1963, to Feb. 15, 1964, Contract SD-182, ARPA Order 446.Google Scholar
  76. L. R. Weisberg and H. W. Leverenz, eds. (March 15, 1964 ), pp. 21–25Google Scholar
  77. J. F. Gibbons and P. C. Prehn, Solid-State Electronics Lab., Stanford Univ., Calif., Interim Tech. Rept. No. 4711–1, Oct. 1961-Aug, 1963, Contract AF 33(616)-7726, SEL-63–105; RTD-TDR-63–4238; AD-434756 (Oct. 1963 ), 52 pp.Google Scholar
  78. D. Richman, J. Phys. Chem. Solids, 24: 1131–1139 (1963)ADSCrossRefGoogle Scholar
  79. L. J. Bodi, J. Electrochem. Soc., 109: 497 (1962)CrossRefGoogle Scholar
  80. S. Iijima and M. Kikuchi, Kogyo Kagaku Zasshi, 65: 1722–1725 (1962)CrossRefGoogle Scholar
  81. S. Iijima and M. Kikuchi, Chem. Abstr., 58:9854B/CGoogle Scholar
  82. J. F. Miller, Compound Semiconductors–Preparation of III— V Compounds, Reinhold (1962), pp. 194–206Google Scholar
  83. F. A. Pizzarello, J. Electrochem. Soc., 109: 226 (1962)CrossRefGoogle Scholar
  84. J. Blanc, R. H. Bube, R. D. Gold, B. Goldstein, et al., RCA Labs., Princeton, N. J., AD-260 767 (1961), 55 pp.Google Scholar
  85. H. G. Grimmeiss, A. Rabenau, and H. Koelmans, J. Appl. Phys., 32: 2123–2127 (1961)ADSCrossRefGoogle Scholar
  86. M. Lorant, Chem. Rundschau, 14: 469 (1961)Google Scholar
  87. Arrigo Addamiano, J. Am. Chem. Soc., 82: 1537 (1960)CrossRefGoogle Scholar
  88. R. E. Davis, Properties of Elemental and Compound Semiconductors, Inter-science, 1960, pp. 295–3 02Google Scholar
  89. D. Effer and G. R. Antell, J. Electrochem. Soc., 107: 252 (1960)CrossRefGoogle Scholar
  90. G. J. Frosch, M. Gershenzon, and D. F. Gibbs, 1960 Spring Mtg. Electrochem. Soc.Google Scholar
  91. L. R. Weisberg et al., RCA, Sci. Rep. No. 2, pp. 1–22, 28–38 (June 1960), AD 243 363 BridgmanGoogle Scholar
  92. H. T. Minden, J. Cryst. Growth, 8: 37–44 (1971)ADSCrossRefGoogle Scholar
  93. T. S. Plaskett, J. M. Woodall, and A. Segmuller, J. Electrochem. Soc., 118: 115–117 (1971)CrossRefGoogle Scholar
  94. M. E. Weiner, D. T. Lassota, and B. Schwartz, J. Electrochem. Soc., 118: 301–306 (1971)CrossRefGoogle Scholar
  95. H. Araks, G. Iwane, and T. Aoki, Rev. Electrical Commun. Lab., 18 (9–10): 608–617 (1970)Google Scholar
  96. A. Boucher and L. Hollan, J. Electrochem. Soc., 117: 932–936 (1970)CrossRefGoogle Scholar
  97. A. Y. Cho, J. Appl. Phys., 41: 2780 (1970)ADSCrossRefGoogle Scholar
  98. M. Ya. Dashevsky and B A Sakharov, Izv. Akad. Nauk SSSR, Neorg. Mater., 6(9):1557–1560 (1970) In RussianGoogle Scholar
  99. F. A. Gimel’farb, B. D. Lainer, M. G. Mil’vidskii, and V. I. Fistul’, Kristallografiya, 15: 201–202 (1970)Google Scholar
  100. F. A. Gimel’farb, B. D. Lainer, M. G. Mil’vidskii, and V. I. Fistul’, Soy. Phys. — Cryst., 15: 169–170 (1970)Google Scholar
  101. W. A. Gutierrez, Solid-State Electron., 13: 1199–1200 (1970)ADSCrossRefGoogle Scholar
  102. E. D. Jungbluth, Met. Trans., 1: 575–585 (1970)CrossRefGoogle Scholar
  103. B. D. Lainer, A. V. Berkova, M. G. Mil’vidskii, and V. V. Rakov, Soy. Phys. — Cryst., 15: 743–746 (1970)Google Scholar
  104. L. G. Lavrent’eva, M. D. Vilisova, S. P. Gaidareva, and O. M. Ivleva, Izv. Vyssh. Ucheb. Zaved., Fiz., 13 (2): 31–35 (1970)Google Scholar
  105. K. Lindeke, W. Sack, and J. J. Nickl, J. Electrochem. Soc., 117 (10): 1316–1318 (1970)CrossRefGoogle Scholar
  106. M. Moldovanova, P. Gladkov, J. Georglev, and B. Arnaudov, God. Soft’. Univ., Fiz. Fak., Bulg., 62:161–166 (1967–1968) (pub. 1970 )Google Scholar
  107. M. Ohyama, J. Phys. Soc. Japan, 29: 706–710 (1970)CrossRefGoogle Scholar
  108. M. B. Panish and S. Sumskt, J. Appt. Phys., 41: 3195–3196 (1970)ADSCrossRefGoogle Scholar
  109. E. Papp, S. Zsindely, T. Legat, and B. Podor, Acta Tech. Hung., 68 (1–2): 245–253 (1970)Google Scholar
  110. F. E. Resztoczy, F. Ermanis, I. Hayashi, and B. Schwartz, J. Appl. Phys., 41: 264–270 (1970)ADSCrossRefGoogle Scholar
  111. Dawsons of Pall Mall, Cannon House, Park Farm Road, Folkestone, Kent, England (April 1971)Google Scholar
  112. L. N. Alexandrov, Krist. Tech., 4: K17 - K24 (1969)CrossRefGoogle Scholar
  113. E. André and J. M. LeDuc, R. T. C. R.diotechnique-Compelec, 14-Caen, Rapp. final D. G. R. S. T., Action concertée: Electron., Contrat No. 6600141 (1969), 8 pp.Google Scholar
  114. R. D. Baxter, J. F. Miller, H. L. Leonard, and A. C. Beer, Battelle Memorial Inst., Columbus, Ohio, NASA-Cr-86277; ISR 2 (Dec. 1969), 26 pp.Google Scholar
  115. A. E. Blakeslee and B. K. Bischoff, IBM, Yorktown Heights, N. Y., RC 2448 (11873) (April 24, 1969 )Google Scholar
  116. L. Castet, L. Mayet, and G. Mesnard, Rev. Phys. Appl., 4: 431–435 (1969)CrossRefGoogle Scholar
  117. A. Y. Cho, Surface Sci., 17 (2): 494–503 (1969)ADSCrossRefGoogle Scholar
  118. M. Ya. Dashevskii and A. N. Poterukhin, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (11): 2012–2014 (1969)Google Scholar
  119. M. Ya. Dashevskii and A. N. Poterukhin, Inorg. Mater., 5 (11): 1713–1715 (1969)Google Scholar
  120. M. Ya. Dashevskii, G. V. Kukuladze, V. B. Lazarev, and M. S. Mirgalovskaya, Rost Kristallov, Izd. Akad. Nauk, SSSR (1968), pp. 104–107 Growth of Crystals, Vol. 8 (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1969), pp. 85–90Google Scholar
  121. A. R. Goodwin, C. D. Dobson, and J. Franks, Gallium Arsenide, Proc. 2nd International Symposium 1968, (C. I. Pedersen, ed.), Institute of Physics and the Physics Society, London, England (1969), pp. 36–40Google Scholar
  122. J. S. Harris and W. L. Snyder, Solid-State Electron., 12: 337–340 (1969)ADSCrossRefGoogle Scholar
  123. H. G. B. Hicks and D. F. Manley, Solid State Commun., 7: 1463–1465 (1969)ADSCrossRefGoogle Scholar
  124. Kenneth L. Klohn and Lothar Wandiner, Army Electronics Command, Fort Monmouth, N. J., AD-700134; ECOM-3198 (Nov. 1969), 29 pp. Review; Czochralski, floating zone, Bridgman, and gradient freezeGoogle Scholar
  125. A. P. Kulshreshtha, T. Mookherji, and G. M. Arnett, National Aeronautics and Space Administration, Marshall Flight Center, Huntsville, Ala., in its Space Processing and Manufacturing Meeting (Oct. 21, 1969 ), pp. 306–322Google Scholar
  126. B. D. Lainer, V. V. Rakov, and M. G. Mil’vidskii, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (1): 25–29 (1969)Google Scholar
  127. B. D. Lainer, V. V. Rakov, and M. G. Mil’vidskii, Inorg. Mater., 5 (1): 20–23 (1969)Google Scholar
  128. B. D. Lainer, V. V. Rakov, and M. G. Mil’vidskii, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (8): 1370–1372 (1969)Google Scholar
  129. B. D. Lainer, V. V. Rakov, and M. G. Mil’vidskii, Inorg. Mater., 5 (8): 1169–1171 (1969)Google Scholar
  130. B. D. Lainer, V. V. Voronkov, M. G. Mil’vidskii, and V. V. Rakov, Kristallografiya, 14 (3): 537–538 (1969)Google Scholar
  131. B. D. Lainer, V. V. Voronkov, M. G. Mil’vidskii, and V. V. Rakov, Sov. Phys.–Cryst., 14 (3): 451–453 (1969)Google Scholar
  132. H. M. Manasevit and W. I. Simpson, J. Electrochem. Soc., 116: 1725–1732 (1969)CrossRefGoogle Scholar
  133. H. T. Minden, Solid State Tech., 12 (4): 25–35 (1969)Google Scholar
  134. E. Papp, B. Podor, S. Zsindely, and T. Legat, Hiradastechnica Magyar, 20 (12): 368–373 (1969)Google Scholar
  135. O. V. Pelevin, B. G. Girich, and M. G. Mil’vidskii, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (7): 1200–1202 (1969)Google Scholar
  136. O. V. Pelevin, B. G. Girich, and M. G. Mil’vidskii, Inorg. Mater., 5 (7): 1021–1023 (1969)Google Scholar
  137. P. Rai-Choudhury, J. Electrochem. Soc., 116: 1745–1746 (1969)CrossRefGoogle Scholar
  138. V. V. Rakov, B. D. Lainer, and M. G. Mil’vidskii, Inorg. Mater., 5: 1242–1243 (1969)Google Scholar
  139. V. V. Rakov et al., Izv. Akad. Nauk SSSR 5: 1458–1459 (1969)Google Scholar
  140. Yu. M. Rumyantsev and F. A. Kuznetsov, Izv. Sibersk. Otd. Akad. Nauk SSSR, 5 (12): 66–72 (1969)Google Scholar
  141. Takashi Shimoda and Shin-ichi Akai, Japan. J. Appl. Phys., 8: 1352 (1969)ADSCrossRefGoogle Scholar
  142. H. Teshima, Y. Tarui, and O. Takeda, Bull. Electrotech. Lab. (Japan), 33 (6): 692–699 (1969)Google Scholar
  143. V. N. Vasilevskaja, L.I. Dacenko, and L. N. Mikhajlov, Ukr. Fiz. Zh., 14 (5): 867–870 (1969)Google Scholar
  144. E. N. Zhelikhovskaya and L. A. Borisova, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (12): 2205–2206 (1969)Google Scholar
  145. E. N. Zhelikhovskaya and L. A. Borisova, Inorg. Mater., 5 (12): 1885–1886 (1969)Google Scholar
  146. John W. Burd and Warren O. Groues, Monsanto Co., French Patent 1,509,254 (Jan. 12, 1968 ) 23 pp.Google Scholar
  147. C. Constantinescu, P. Mihailovici, I. Petrescu-Prahova, and G. Popovici, Rev. Roum. Phys., 13 (5): 489–490 (1968)Google Scholar
  148. M. Ya. Dashevskii and A. V. Zakharova, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (9): 1471–1473 (1968)Google Scholar
  149. M. Ya. Dashevskii and A. V. Zakharova, Inorg. Mater., 4 (9): 1286–1288 (1968)Google Scholar
  150. J. Frey, Electronics and Appl. Phys. Div., U. K. A. E. A. Research Group, Atomic Energy Research Establishment, Harwell, England, AERE-R 5757 (March 1968)Google Scholar
  151. Fumio Hasegawa and Takeshi Saito, Japan. J. Appl. Phys., 7: 1342 (1968)ADSCrossRefGoogle Scholar
  152. Bert Jeppsson and L. F. Eastman, Cayuga Associates, Inc., Cornell Research Park, Ithaca, New York 14850, ECOM-0397–1 (U. S. Army Electronics Command, Fort Monmouth, N. J. 07703 ) (Dec. 1968), 18 pp.Google Scholar
  153. Harold M. Manasevit, Appl. Phys. Letters, 12: 156 (1968)ADSCrossRefGoogle Scholar
  154. Eugene S. Meieran, Trans. AIME, 242: 413 (1968)Google Scholar
  155. O. V. Pelevin and M. G. Mil’vidskti, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (11): 1864–1868 (1968)Google Scholar
  156. O. V. Pelevin and M. G. Mil’vidskti, Inorg. Mater., 4 (11): 1625–1628 (1968)Google Scholar
  157. T. S. Plaskett, J. M. Woodall, and A. Segmuller with A. H. Parsons, and W. C. Wuestenhoefer, IBM, Yorktown Heights, N. Y., RC-2052 (No. 10495) (April 10, 1968 )Google Scholar
  158. V. A. Presnov, V. A. Selivanova, and S. S. Khludkov, Rost Kristallov, Izd. Akad. Nauk SSSR (1965), pp. 275–280 Growth of Crystals, Vol. 6B (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1968), pp. 86–90Google Scholar
  159. F. E. Resztoczy, F. Ermanis, I. Hayashi, and B. Schwartz, Bull. Am. Phys. Soc., 13: 375 (1968)Google Scholar
  160. H. R. Winteler, and U. Zimmerli, Helv. Phys. Acta, 41: 1210–1220 (1968)Google Scholar
  161. W. A. Tiller, J. Cryst. Growth, 2: 62–79 (1968)ADSGoogle Scholar
  162. Ulrich Zimmerli, Ph. D. thesis, Eidgnössische Technische Hochschule, Zurich, Switzerland (1968), DISS-4072, 41 pp.Google Scholar
  163. Louis G. Bailey, Trans. AIME, 239: 310 (1967)Google Scholar
  164. S. J. Bass and P. E. Oliver, Proc. Internat. Symposium on Gallium Arsenide, Reading, September 1966 (1967), pp. 41–45Google Scholar
  165. Bell Telephone Laboratories (Technical Information Libraries, Public Relations and Publication Div., Murray Hill, N. J.), Bibliography No. 109 (March 1967)Google Scholar
  166. D. E. Bolger, J. Franks, J. Gordon, and J. Whitaker, Proc. Internat. Symp. on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 16–22Google Scholar
  167. J. C. Brice, J. A. Roberts, and G. Smith, J. Mater. Sci., 2: 131–138 (1967)ADSCrossRefGoogle Scholar
  168. N. Braslau, J. M. Woodall, C. Lanza, and A. E. Blakeslee (IBM, Yorktown Heights, N. Y. 10598), 8th Quart. Progr. Rept. — April 1, 1967, to June 30, 1967; 7th Quart. Rept. — Jan. 1, 1967, to March 31, 1967; 5th Quart. Rept. —July 1 to Sept. 30, 1966 (1967)Google Scholar
  169. R. Cadoret and J. C. Monier, J. Cryst. Growth, 1: 59–66 (1967)ADSCrossRefGoogle Scholar
  170. D. V. Eddolls, J. R. Knight, and B. L. H. Wilson, Proc. Internat. Symp. on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 3–9Google Scholar
  171. J. L. Fertin, J. Lebailly, and E. Deyris, Proc. Internat. Symp. on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 46–51Google Scholar
  172. A. Hruban, Bul. Wojsk. Akad. Tech., 16: 89–95 (1967)Google Scholar
  173. B. D. Joyce and J. B. Mullin, Proc. Internat. Symp. on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 23–26Google Scholar
  174. C. S. Kang and P. E. Greene, Appl. Phys. Letters, 11: 171–173 (1967)ADSCrossRefGoogle Scholar
  175. Hiroyuki Kasano and Shinya Ilda, Japan. J. Appl. Phys., 6: 1038 (1967)ADSCrossRefGoogle Scholar
  176. J. E. Knappet and S. J. T. Owen, J. Metals and Mat. (Nov. 1967), p..369Google Scholar
  177. J. E. Knappet and S. J. T. Owen, Phys. Stat. Sol., 21: K99 (1967)ADSCrossRefGoogle Scholar
  178. A. V. Kovda and S. A. Semiletow, Kristallografiya, 12 (3): 535–536 (1967)Google Scholar
  179. A. V. Kovda and S. A. Semiletow, Sov. Phys. — Cryst., 12 (3): 468–469 (1967)Google Scholar
  180. Takao Nakano, Japan. J. Appl. Phys., 6: 854 (1967)ADSCrossRefGoogle Scholar
  181. M. B. Panish, J. Electrochem. Soc., 114: 91–95 (1967)CrossRefGoogle Scholar
  182. D. W. Shaw, R. W. Conrad, E. W. Mehal, and O. W. Wilson, Proc. Internat. Symp. on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 10–15Google Scholar
  183. N. N. Sheftal’ and Kh. A. Magomedov, Kristallografiya, 12 (1): 152–153 (1967)Google Scholar
  184. N. N. Sheftal’ and Kh. A. Magomedov, Soy. Phys. — Cryst., 12 (1): 129–131 (1967)Google Scholar
  185. Proc. Internat. Symp., Reading, England, September 1966 ( A. C. Strickland, ed.), Institute of Physics and Physical Society, London (1967)Google Scholar
  186. R. C. Taylor, IBM, Yorktown Heights, N. Y., NC-684 (Jan. 19, 1967 )Google Scholar
  187. J. J. Tietjen, R. Clough, and D. Richman, RCA, Princeton, N. J., NASA-CR-90110; QTR-1 (June 1967), 16 pp.Google Scholar
  188. E. W. Williams and D. M. Blacknall, Trans. AIME, 239: 387 (1967)Google Scholar
  189. F. V. Williams, Proc. Internat. Symp. on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 27–31Google Scholar
  190. J. M. Woodall, Trans. AIME, 239: 378 (1967)Google Scholar
  191. M. S. Abrahams and C. J. Buiocchi, J. Appl. Phys., 37: 1974 (1966)Google Scholar
  192. I. Akasaki, Cyo Butsuri, 35 (8): 597 (1966)Google Scholar
  193. J. F. Black and S. M. Ku, J. Electrochem. Soc., 113: 249–254 (1966)CrossRefGoogle Scholar
  194. L. C. Bobb, H. Holloway, K. H. Maxwell, and E. Zimmerman, J. Appl. Phys., 37: 3909 (1966)ADSCrossRefGoogle Scholar
  195. L. C. Bobb, H. Holloway, K. H. Maxwell, and E. Zimmerman, J. Phys. Chem. Solids, 27: 1679–1685 (1966)ADSCrossRefGoogle Scholar
  196. E. N. Bojko, L. A. Borisova, and K. E. Mironov, Acta Cryst., 21, Pt. 7, Suppl., A258 (Dec. 30, 1966 ) Seventh Intern. Congr. Symp. Intern. Union of Crystallography, Moscow, 1966Google Scholar
  197. P. Bourgeois, Le Vide, No. Special A. B. I. SEM (Oct., 1966 ), p. 34Google Scholar
  198. J. C. Brice and G. D. King, Nature, 209: 1346 (1966)ADSCrossRefGoogle Scholar
  199. J. C. Brice, R. E. Hunt, G. D. King, and H. C. Wright, Solid-State Electronics, 9: 853–857 (1966)ADSCrossRefGoogle Scholar
  200. Yu. M. Chashchinov and V. A. Mokievskii, Fiz. Tverd. Tela, 8 (5): 1511–1516 (1966)Google Scholar
  201. Yu. M. Chashchinov and V. A. Mokievskii, Sov. Phys. — Solid State, 8 (5): 1201–1205 (1966)Google Scholar
  202. R. W. Conrad and R. W. Haisty, J. Electrochem. Soc., 113: 199 (1966)CrossRefGoogle Scholar
  203. W. R. Derby and A. M. Herzog, Monsanto Co., U. S. Patent 3,240,568 (March 15, 1966 ), 7 pp.Google Scholar
  204. H. J. Dersin and E. Sirti, Z. Naturforsch., 21a: 332 (1966)ADSGoogle Scholar
  205. Tohru Hara and Isamu Akasaki, Japan. J. Appl. Phys., 5: 1255–1256 (1966)ADSCrossRefGoogle Scholar
  206. P. L. Hoyt and R. W. Haisty, J. Electrochem. Soc., 113: 296–297 (1966)CrossRefGoogle Scholar
  207. S. Iida and Y. Sugita, Appl. Phys. Letters, 8: 77 (1966)ADSCrossRefGoogle Scholar
  208. P. Jona, IBM, Yorktown Heights, N. Y., AFOSR-68–2887; AD 680049 (1966), 18 pp.Google Scholar
  209. B. A. Joyce, The Use of Thin Films in Physical Investigations, Academic Press, New York, 1966, p. 87Google Scholar
  210. B. D. Joyce and J. B. Mullin, Solid State Commun., 4: 463 (1966)ADSCrossRefGoogle Scholar
  211. Peter Knoll and Rainer Zuleeg, J. Appl. Phys., 37: 5006–5007 (1966)ADSCrossRefGoogle Scholar
  212. S. M. Ku, J, Electrochem. Soc., 113: 813–816 (1966)CrossRefGoogle Scholar
  213. K. L. Lawley, J. Electrochem. Soc., 113: 240 (1966)CrossRefGoogle Scholar
  214. W. K. Liebmann and G. Kampschulte, Solid-State Electronics, 9: 828–830 (1966)ADSCrossRefGoogle Scholar
  215. E. W. Mehal and G. R. Cronin, Electrochem. Tech., 4: 540 (1966)Google Scholar
  216. E. W. Mehal, R. W. Haisty, and D. W. Shaw, Trans. AIME, 236: 263 (1966)Google Scholar
  217. R. R. Moest, J. Electrochem. Soc., 113: 141 (1966)CrossRefGoogle Scholar
  218. K. K. Ozolis and E. Yu. Kokorish, Rost Kristallov, Izd. Akad. Nauk SSSR (1964), pp. 181–202 Growth of Crystals, Vol. 4 (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1966), pp. 150–166Google Scholar
  219. M. Rubenstein and E. Myers, J. Electrochem. Soc., 113: 365 (1966)CrossRefGoogle Scholar
  220. R. G. Schulze, J. Appl. Phys., 37: 4295 (1966)ADSCrossRefGoogle Scholar
  221. B. Schwartz, Vapor Deposition, John Wiley and Sons, Inc., New York (1966), p. 612Google Scholar
  222. Don W. Shaw, J. Electrochem. Soc., 113: 904 (1966)CrossRefGoogle Scholar
  223. Robert I. Stearns and James B. McNeely, J. Appl. Phys., 37: 933–934 (1966)ADSCrossRefGoogle Scholar
  224. J. J. Tietjen, G. Kupsky, and H. Gossenberger, Solid-State Electronics, 9: 1049–1053 (1966)ADSCrossRefGoogle Scholar
  225. M. Weinstein, H. E. Labelle, and A. I. Mlaysky, J. Appl. Phys., 37: 2913–2914 (1966)ADSCrossRefGoogle Scholar
  226. C. M. Wolfe, T. M. Quist, and A. J. Strauss, ESD-TR-66–207, Lincoln Laboratory, Mass. Inst. of Technology, Cambridge, Mass., pp. 7–8Google Scholar
  227. J. M. Woodall and J. F. Woods, Solid State Commun., 4: 33–36 (1966)ADSCrossRefGoogle Scholar
  228. M. Yamaguchi, Y. Mizushima, S. Hirota, and H. Noake, J. Electrochem. Soc., 113: 294–296 (1966)CrossRefGoogle Scholar
  229. E. M. N. Baldwin, J. C. Brice, and E. J. Millett, J. Sci. Instr., 42: 883–884 (1965)ADSCrossRefGoogle Scholar
  230. H. R. Barkemeyer, W. J. McAleer, and P. I. Pollak, Merck and Co., U. S. Patent 3,206,406 (Sept. 14, 1965 )Google Scholar
  231. R. L. Barns and W. C. Ellis, J. Appl. Phys., 36: 2296–2301 (1965)ADSCrossRefGoogle Scholar
  232. S. E. Blum, M. Pilkuhn, T. S. Plaskett, H. Rupprecht, R. S. Title, J. M. Woodall, and J. F. Woods, IBM, Yorktown Heights, N. Y., RC-1351 (Feb. 9, 1965 )Google Scholar
  233. Yu. M. Burdukov, I. T. Voronina, O. V. Emel’yanenko, and T. S. Lagunova, Izv. Akad. Nauk SSSR, Neorg. Mater., 1 (9): 1459–1461 (1965)Google Scholar
  234. Yu. M. Burdukov, I. T. Voronina, O. V. Emel’yanenko, and T. S. Lagunova, Inorg. Mater., 1 (9): 1332–1334 (1965)Google Scholar
  235. B. Ciszewski, K. Wieczffinski, A. Kalinowski, S. Himmel, J. Luty, and H. Ziencik, Biul. Wojskowej Akad. Tech., 14 (157): 79–107 (1965)Google Scholar
  236. B. Ciszewski, K. Wieczffinski, A. Kalinowski, S. Himmel, J. Luty, and H. Ziencik, Chem. Abstr., 65(6):8094–8095Google Scholar
  237. D. Effer, J. Electrochem. Soc., 112: 1020 (1965)CrossRefGoogle Scholar
  238. W. C. Ellis, W. G. Pfann, and R. S. Wagner, Western Electric Company, Belg. Patent 658,975 (May 17, 1965 ), 18 pp.Google Scholar
  239. N. A. Goryunova, G. K. Averkieva, and A. A. Vaipolin, Fiz. Dokl. K 23-El Nauchn. Konf. Leningr. lnzh.-Stroit. Inst. Leningrad. Sb. (1965), pp. 52–53Google Scholar
  240. N. A. Goryunova, G. K. Averkieva, and A. A. Vaipolin, Chem. Abstr., 64: 11957–11958Google Scholar
  241. G. Hellbardt, J. Electrochem. Soc., 112: 443 (1965)CrossRefGoogle Scholar
  242. C. Hilsum, Progress in Semiconductors, Vol. 9 (Alan F. Gibson and R. E. Burgess, eds.), A Heward Book, Temple Press Books, Ltd., London (1965), pp. 135–178Google Scholar
  243. Hitachi, Ltd., Netherlands Appl. 291,059 (Jan. 25, 1965 ), 7 pp.Google Scholar
  244. W. Hoffmeister, G. Kampschulte, and W. K. Liebmann, Phys. Vehr. D. P. G., Dtsch., 5 (4): 130 (1965)Google Scholar
  245. H. Holloway, K. Wollmann, and A. S. Joseph, Phil. Mag., 11: 263 (1965)ADSCrossRefGoogle Scholar
  246. J. R. Knight, D. Effer, and P. R. Evans, Solid-State Electronics, 8: 178 (1965)ADSCrossRefGoogle Scholar
  247. W. Krieglstein and B. Reiss, Siemens-Schuckerwerke AG, U. S. Patent 3,168,423 (Feb. 2, 1965 ), 6 pp.Google Scholar
  248. H. R. Leonhardt, J. Electrochem. Soc., 112: 237–240 (1965)CrossRefGoogle Scholar
  249. V. J. Lyons, IBM Corp., U. S. Patent 3,198,606 (Aug. 3, 1965 )Google Scholar
  250. Kh. A. Magomedov and N. N. Sheftal’, Izv. Akad. Nauk SSSR, Neorg. Mater., 1 (12): 2113–2119 (1965)Google Scholar
  251. Kh. A. Magomedov and N. N. Sheftal’, Inorg. Mater., 1 (12): 1911–1917 (1965)Google Scholar
  252. Kh. A. Magomedov and N. N. Sheftal,’ Kristallografiya, 9 (6): 902–909 (1964)Google Scholar
  253. Kh. A. Magomedov and N. N. Sheftal,’ Sov. Phys.—Cryst., 9 (6): 756–760 (1965)Google Scholar
  254. A. Magomedov and Yu. N. Yarmukhamedov, Izv. Akad. Nauk SSSR, Neorg. Mater., 1 (12): 2120–2127 (1965)Google Scholar
  255. A. Magomedov and Yu. N. Yarmukhamedov, Inorg. Mater., 1 (12): 1918–1924 (1965)Google Scholar
  256. M. Michelitsch, J. Electrochem. Soc., 112: 747 (1965)CrossRefGoogle Scholar
  257. M. F. Millea and W. R. Wilcox, J. Electrochem. Soc., 112: 872–874 (1965)CrossRefGoogle Scholar
  258. M. G. Mil’vidskii and O. V. PBlevin, Izv. Akad. Nauk SSSR, Neorg. Mater., 1 (9): 1454–1458 (1965)Google Scholar
  259. M. G. Mil’vidskii and O. V. PBlevin, Inorg. Mater., 1 (9): 1328–1331 (1965)Google Scholar
  260. J. B. Mullen, B. W. Straughan, and W. S. Brickell, J. Phys. Chem. Solids, 26: 782–784 (1965)ADSCrossRefGoogle Scholar
  261. John L. Richards, Philco Corp., Blue Bell, Penn., AFCRL-65–412 (April 30, 1965 )Google Scholar
  262. R. A. Sehr, Contract DA 28–043 AMC-00235 (E) (U. S. Army Electronics Command, Fort Monmouth, N. J., AMSEL-RDPFM ) (July 1965), 11 pp.Google Scholar
  263. Siemens and Halske AG, British Patent 993,701 (June 2, 1965)Google Scholar
  264. F. W. Tausch, Jr., and A. G. Lapierre, III, J. Electrochem. Soc., 112: 706 (1965)CrossRefGoogle Scholar
  265. G. A. Wolff and A. I. Mlaysky, Colloques Internationaux du Centre National de la Rècherche Scientifique, No. 152, Adsorption et Croissance Cristalline, Nancy, 6–12 juin 1965, Editions du Centre National de la Recherche Scientifique, 15, quai Anatole-France, Paris 7e (1965), pp. 711–722Google Scholar
  266. B. G. Zakharov, Kristallografiya, 10 (3): 442–443 (1965)Google Scholar
  267. B. G. Zakharov, Soy. Phys. — Cryst., 10 (3): 366–367 (1965)Google Scholar
  268. G. Ziegler, Siemens-Schuckertwerke AG, German Patent 1,201,319 (Sept. 23, 1965 ), 3 pp.Google Scholar
  269. M. A. Zuegel, J. Electrochem. Soc., 112: 1153 (1965)CrossRefGoogle Scholar
  270. M. F. Amsterdam, R. H. Moss, and S. O’Hara, Westinghouse Electric Corp., AS-606891 (May 1964)Google Scholar
  271. G. R. Cronin and R. W. Haisty, J. Electrochem. Soc., 111: 874–877 (1964)CrossRefGoogle Scholar
  272. H. J. Dersin and E. Sirtl, Z. Metallk., 55: 536–543 (1964)Google Scholar
  273. R. E. Ewing and P. E. Greene, J. Electrochem. Soc., 111: 1266 (1964)CrossRefGoogle Scholar
  274. J. W. Faust and H. F. John, J. Phys. Chem. Solids, 25: 1407–1415 (1964)ADSCrossRefGoogle Scholar
  275. R. R. Ferguson and T. Gabor, J. Electrochem. Soc., 111: 585 (1964)CrossRefGoogle Scholar
  276. T. Gabor, J. Electrochem. Soc., 111: 817 (1964)CrossRefGoogle Scholar
  277. T. Gabor, J. Electrochem. Soc., 111: 821 (1964)CrossRefGoogle Scholar
  278. T. Gabor, J. Electrochem. Soc., 111: 825 (1964)CrossRefGoogle Scholar
  279. P. G. Herkart and L. R. Weisberg, RCA, Belg. Patent 641,009 (April 1, 1964 )Google Scholar
  280. A. Ito, M. Ishii, and M. Ito, Mitsubishi Denki Lab. Rept., 5: 501 (1964)Google Scholar
  281. He Bong Kim and Richard Longini, Carnegie Inst. of Tech., Pittsburgh, Penn., NASA-CR76429 (1964)Google Scholar
  282. W. Kriegstein, H. Pfister, and G. Ziegler, Z. Angew. Phys., 17: 295 (1964)Google Scholar
  283. O. Madelung, John Wiley and Sons, New York (1964)Google Scholar
  284. M. Michelitsch, W. Kappallo, and G. Hellbardt, J. Electrochem. Soc., 111: 1248 (1964)CrossRefGoogle Scholar
  285. W. Miederer, G. Ziegler, and R. Doetzer, Siemens-Schuckertwerke AG, German Patent 1,176,102 (Aug. 20, 1964 )Google Scholar
  286. M. F. Millea and W. R. Wilcox, Aerospace Corp., El Segundo, Calif., SSD-TDR-64–263; TDR-469 (9230–03) -1; AD-455135 (Dec. 30, 1964 )Google Scholar
  287. Philips Electrical Industries, Ltd., British Patent 958,870 (May 27, 1964 )Google Scholar
  288. V. A. Presnov and V. A. Selivanova, Pverkhn. i Kontaktn Yavleniya v Poluprov, Sibirsk Fiz. Tekhn. Nauchn. Issled. Inst. Pro. Tomskom. Gos. Univ. (1964) (in Russian), pp. 495–503Google Scholar
  289. D. Richman, Synthesis and characterization of electronically active materials, tech. rept. No. 2 (RCA, Princeton, N. J.) (Dec. 15, 1964 ), pp. 17–20Google Scholar
  290. H. Schafer, Academic Press, New York (1964), p. 59Google Scholar
  291. V. J. Silvestri and F. Fang, J. Electrochem. Soc., 111: 1164–1167 (1964)CrossRefGoogle Scholar
  292. R. S. Title, IBM, Yorktown Heights, N. Y., Third semiannual tech. summary rept., May 31-Dec. 31, 1964 (1964)Google Scholar
  293. W. J. Turner and H. Rupprecht, IBM, Yorktown Heights, N, Y., AD-442598 (1964), 33 pp.Google Scholar
  294. F. V. Williams, J. Electrochem. Soc., 111: 886 (1964)CrossRefGoogle Scholar
  295. Forrest V. Williams, Solid-State Electronics, 7: 833–834 (1964)CrossRefGoogle Scholar
  296. J. M. Woodall, IBM Corp., French Patent 1,440,448, May 27, 1966; British Patent 1,049,356, Nov. 23, 1966Google Scholar
  297. J. M. Woodall, Chem. Abstr., 66(81:33006; 66(101:41726Google Scholar
  298. J. M. Woodall, Electrochem. Technol., 2: 167–169 (1964)Google Scholar
  299. Hugh H. Woodbury, Manuel Aven, Robert N. Hall, Richard Baertsch, and Frederick K. Heumann, General Electric Research Laboratory, AFCRL-64–1007 (Nov. 1964)Google Scholar
  300. Single-Crystal Films, Macmillan Company, New York (1964), p. 283Google Scholar
  301. James A. Amick, RCA Rev., 24: 555–573 (1963)Google Scholar
  302. M. F. Amsterdam, R. H. Moss, S. O’Hara, R. K. Riel, H. F. John, et al., Air Force Materials Lab., Wright-Patterson AFB, Ohio, MLTDR-64–129; AD-606891 (May 1964), 138 pp.Google Scholar
  303. G. R. Cronin, Morton E. Jones, and O. Wilson, J. Electrochem. Soc., 110: 582–584 (1963)CrossRefGoogle Scholar
  304. E. Enk, H. Jacob, and J. Nickl, Wacker-Chemie GmbH, U. S. Patent 3,077,384 (Feb. 12, 1963 )Google Scholar
  305. James F. Gibbons and Preben C. Prehn, Solid State Electronics Lab., University of Stanford, Calif., SEL-63–105; RTD-TDR-63–4238; AD-434756 (Oct. 1963), 52 pp.Google Scholar
  306. N. Goldsmith, J. Electrochem. Soc., 110: 588 (1963)CrossRefGoogle Scholar
  307. N. Goldsmith and W. Oshinsky, RCA Rev., 24: 546–554 (1963)Google Scholar
  308. G. Eugene Gottlieb and John F. Corboy, RCA Rev., 24: 585–595 (1963)Google Scholar
  309. A. P. Izergin, V. N. Chernigovskaya, and A. P. Kalashnikov, Foreign Tech. Div., Air Force Systems Command, Wright-Patterson AFB, Ohio, FTD-HT-66–675; AD-64’7725 [trans. Russian Patent No. 169064 (Appl. No. 833269/23–4, 26 Apr. 19631Google Scholar
  310. A. P. Izergin, V. A. Selivanova, and V. N. Chernigovskaya, Izv. Vyssh. Ucheb. Zaved. Fiz., 3: 23–26 (1963)Google Scholar
  311. Kazuhiro Kurata, Junji Shirafuji, and Takao Endo, Japan. J. Appl. Phys., 2: 64–65 (1963)ADSCrossRefGoogle Scholar
  312. Charlotte Z. LeMay, J. Appl. Phys., 34: 439 (1963)ADSCrossRefGoogle Scholar
  313. A. I. Mlaysky and M. Weinstein, J. Appl. Phys., 34: 2885–2892 (1963)ADSCrossRefGoogle Scholar
  314. H. Nelson, RCA Rev., 24: 603–615 (1963)Google Scholar
  315. Takasi Okada, Japan. J. Appl. Phys., 2: 206 (1963)ADSCrossRefGoogle Scholar
  316. T. Okada, T. Kano, and S. Kikuchi, Japan. J. Appl. Phys., 2: 780 (1963)ADSCrossRefGoogle Scholar
  317. F. A. Pizzarello, J. Electrochem. Soc., 110: 1059 (1963)CrossRefGoogle Scholar
  318. D. Richman, RCA Rev., 24, 596–602 (1963)Google Scholar
  319. P. H. Robinson, RCA Rev., 24: 574–584 (1963)Google Scholar
  320. E. Sirtl, J. Phys. Chem. Solids, 24: 1285 (1963)ADSCrossRefGoogle Scholar
  321. A. Steinemann and U. Zimmerli, Solid-State Electronics, 6: 597–604 (1963)ADSCrossRefGoogle Scholar
  322. M. Weinstein, M. A. Wright, L. B. Griffiths, and A. I. Mlaysky, NASA Report N63–20412 (1963), 72 pp.Google Scholar
  323. Westinghouse Elec. Corp., quarterly report (May 1963) (U. S. Gov. Res. Rep., 38 (20):125)Google Scholar
  324. J. T. Woods and N. G. Ainslie, J. Appl. Phys., 34: 1469–1475 (1963)ADSCrossRefGoogle Scholar
  325. N. V. Philips, Gloeilampenfabrieken, Belg. Patent 625,139 (May 21, 1963 ) 11 pp.Google Scholar
  326. W. P. Allred, Conf. on the Ultrapurification of Semiconductor Materials, Boston, 1961, Proc. (1962), pp. 550–567Google Scholar
  327. G. R. Antell, Compound Semiconductors, Reinhold Publishing Corp., New York (1962), p. 288Google Scholar
  328. A. I. Bennet, Westinghouse Electric Corp., U. S. Patent 3,031,403 (April 24, 1962 ), 9 pp.Google Scholar
  329. G. R. Booker, J. Appl. Phys., 33: 750 (1962)ADSCrossRefGoogle Scholar
  330. C. N. Cochran and L. M. Foster, J. Electrochem. Soc., 109: 149 (1962)CrossRefGoogle Scholar
  331. A. J. Crocker, J. Appl. Phys., 33: 2840 (1962)ADSCrossRefGoogle Scholar
  332. F. A. Cunnell, W. R. Harding, and R. Wickham, Conf. on the Ultrapurification of Semiconductor Materials, Boston, Proc. (1962), pp. 513–520Google Scholar
  333. L. Ekstrom and L. R. Weisberg, J. Electrochem. Soc., 109: 322–327 (1962)CrossRefGoogle Scholar
  334. K. Harada, S. Yamada, M. Kitao, O. Ohtsuki, and S. Narita, Kogyo Kagaku Zasshi, 65: 1726–1729 (1962)CrossRefGoogle Scholar
  335. K. Harada, S. Yamada, M. Kitao, O. Ohtsuki, and S. Narita, Chem. Abstr., 58: 8467Google Scholar
  336. S. W. big, Jr., and H. T. Minden, J. Electrochem. Soc., 109: 995 (1962)CrossRefGoogle Scholar
  337. G. A. Kataev, A. G. Gregor’eva, and L. N. Rozanova, Tr. Tomskogo Gos. Univ. Ser. Khim., 154: 193–194 (1962)Google Scholar
  338. H. T. Minden, J. Appl. Phys., 33: 243–244 (1962)ADSCrossRefGoogle Scholar
  339. R. R. Moest and B. R. Shupp, J. Electrochem. Soc., 109: 1061 (1962)CrossRefGoogle Scholar
  340. R. R. Monchamp, W. J. McAleer, and P. I. Pollak, J. Electrochem. Soc., 109: 1108 (1962)CrossRefGoogle Scholar
  341. F. A. Pizzarello, J. Electrochem. Soc., 109: 226 (1962)CrossRefGoogle Scholar
  342. L. R. Weisberg, J. Blanc, and E. J. Stofko, J. Electrochem. Soc., 109: 642–643 (1962)CrossRefGoogle Scholar
  343. G. R. Anteil, Brit. J. Appl. Phys., 12: 687–690 (1961)ADSCrossRefGoogle Scholar
  344. N. Holonyak, Jr., D. C. Jillson, and S. F. Bevacqua, Metallurgy of Semiconductors Materials, Interscience Publishers, Inc., New York (1961), p. 49Google Scholar
  345. J. R. Knight, Nature, 190:1001 (June 10, 1961 )Google Scholar
  346. V. J. Lyons and V. J. Silvestri, J. Electrochem. Soc., 108: 117C (1961)Google Scholar
  347. W. J. McAleer, H. R. Barkemeyer, and P. I. Pollak, J. Electrochem. Soc., 108: 1168 (1961)CrossRefGoogle Scholar
  348. R. L. Newman and N. Goldsmith, J. Electrochem. Soc., 108: 1127 (1961)CrossRefGoogle Scholar
  349. T. Okada, T. Kano, and Y. Sasaki, J. Phys. Soc. Japan, 16: 2591 (1961)ADSCrossRefGoogle Scholar
  350. S. J. Silverman, J. Electrochem. Soc., 108: 585–588 (1961)CrossRefGoogle Scholar
  351. L. J. Vieland and S. Skalski, Conf. on the Metallurgy of Elemental and Compound Semi- conductors, Boston, 1960, Proc. (1961), pp. 303–315Google Scholar
  352. D. Effer and G. R. Antell, J. Electrochem. Soc., 107: 252 (1960)CrossRefGoogle Scholar
  353. R. H. Moss and H. C. Nicholson, Fall Meeting, Electrochemical Society, Houston, 1960, abstract in: J. Electrochem. Soc., 107:198C (1960)Google Scholar
  354. J. L. Richards, J. Appl. Phys., 31: 600 (1960)ADSCrossRefGoogle Scholar
  355. F. D. Rosi, D. Meyerhofer, and R. V. Jensen, J. Appl. Phys., 31: 1105–1108 (1960)ADSCrossRefGoogle Scholar
  356. K. Weiser and S. Blum, Fall Meeting, Electrochemical Society, Houston, 1960, abstract in: J. Electrochem. Soc., 107:189C (1960)Google Scholar
  357. J. M. Whelan, J. D. Struthers, and J. A. Ditzenberger, Properties of Elemental and Compound Semiconductors, Metals Society Conferences, Vol. 5, 1959, Interscience, New York (1960), pp. 41–54Google Scholar
  358. L. R. Weisberg, F. D. Rosi, and P. G. Herkart, Properties of Elemental and Compound Semiconductors, Metallurgy Society Conferences, Vol. 5, 1959, Interscience, 1959, New York (1960), pp. 25–67Google Scholar
  359. G. R. Antell and D. Effer, J. Electrochem. Soc., 106: 509 (1959)CrossRefGoogle Scholar
  360. S. G. Ellis, J. Appl. Phys., 30: 947–948 (1959)ADSCrossRefGoogle Scholar
  361. J. M. Whelan and G. H. Wheatley, Phys. Chem. Solids, 6: 169–172 (1958)ADSCrossRefGoogle Scholar
  362. R. Gremmelmaier, Siemens-Schuckertwerke Akt. Ges., German Patent 1,002,741 (Feb. 21, 1957 )Google Scholar
  363. J. M. Whelan and G. H. Wheatley, Bull. Am. Phys. Soc., 2: 120 (1957)Google Scholar
  364. R. Gremmelmaier, Z. Naturforsch., lla: 511–513 (1956)Google Scholar
  365. O. G. Folberth, Z. Naturforsch., 10a: 502 (1955)ADSGoogle Scholar
  366. W. Albers and J. Verberkt, Philips Res. Rept., 25 (1): 17–20 (1970)Google Scholar
  367. G. A. Antypas, J. Electrochem. Soc., 117: 700–703 (1970)CrossRefGoogle Scholar
  368. G. A. Antypas and L. W. James, J. Appl. Phys., 41: 2165–2171 (1970)ADSCrossRefGoogle Scholar
  369. A. E. Blakeslee, IBM Thomas J. Watson Research Center, Yorktown Heights, New York, RC 3055 (Sept. 1970)Google Scholar
  370. F. A. Gimelfarb, E. M. Kistova, V. N. Maslov, B. A. Sakharov, and V. I. Fistul’, Izv. Akad. Nauk SSSR, Neorg. Mater., 6 (3): 461–467 (1970)Google Scholar
  371. F. A. Gimelfarb, E. M. Kistova, V. N. Maslov, B. A. Sakharov, and V. I. Fistul’, Inorg. Mater., 6 (3): 405–411 (1970)Google Scholar
  372. K. K. Shih, J. Electrochem. Soc., 117: 387–389 (1970)CrossRefGoogle Scholar
  373. R. D. Baxter, J. F. Miller, H. L. Leonard, and A. C. Beer Battelle Memorial Institute, Columbus, Ohio, Contract, NAS12–632, ISR-2; NASA-CR-86277 (Dec. 1969), 26 pp.Google Scholar
  374. R. B. Clough and J. J. Tietjen, Trans. AIME, 245: 583 (1969)Google Scholar
  375. R. W. Hamaker and W. B. White, J. Electrochem. Soc., 116: 478–482 (1969)CrossRefGoogle Scholar
  376. I. S. Kovaleva, N. P. Luzhnaya, and S. B. Martikyan, Zh. Neorg. Khim., 14: 2860–2863 (1969)Google Scholar
  377. A. V. Lishina, V. N. Maslov, R. L. Petrusevich, and N. V. Troneva, Rost Kristallov, Izd. Aka.d. Nauk, SSSR (1968), pp. 273–277 Growth of Crystals, Vol. 8 (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1969), pp. 224–227Google Scholar
  378. H. M. Manasevit and W. I. Simpson, J. Electrochem. Soc., 116: 1725–1732 (1969)CrossRefGoogle Scholar
  379. M. B. Panish, J. Phys. Chem. Solids, 30: 1083–1090 (1969)ADSCrossRefGoogle Scholar
  380. M. B. Panish, R. T. Lynch, and S. Sumski, Trans. AIME, 245: 559 (1969)Google Scholar
  381. Huguette Rodot, Jaromir Horak, Georges Rouy, and Jacques Bourneix, Compt. Rend., 269B: 381–384 (1969)Google Scholar
  382. J. J. Tietjen, R. Clough, A. B. Dreeben, R. Enstrom, and D. Richman, Radio Corp. of America, Princeton, N. J., Contract NAS12–538, NASA-CR-86192; ISR-2 (March 1969), 29 pp.Google Scholar
  383. J. M. Woodall, H. Rupprecht, and W. Reuter, J. Electrochem. Soc., 116 (6): 899–903 (1969)CrossRefGoogle Scholar
  384. R. K. Purohit, J. Mater. Sci., 3: 330–332 (1968)ADSCrossRefGoogle Scholar
  385. L. R. Weisberg and B. Goldstein, Nucleonics in Aerospace, Proceedings of the Second International Symposium, Columbus, Ohio, July 12–14, 1967, Instrument Society of America, New York (1968), pp. 182–186Google Scholar
  386. G. A. Wolff, H. E. LaBelle, Jr., and B. N. Das, Trans. AIME, 242: 436 (1968)Google Scholar
  387. R. W. Conrad, P. L. Hoyt, and D. D. Martin, J. Electrochem. Soc., 114: 164 (1967)CrossRefGoogle Scholar
  388. E. D. Hinkley and R. H. Rediker, Lincoln Lab., Massachusetts Institute of Technology, Lexington, Contract AF 19(628)-5167, ESD-TR-67–468; TN-1967–40; AD-65777 (August 1967), 54 pp.Google Scholar
  389. H. Kasano and S. Iida, Japan. J. Appl. Phys., 6: 1038 (1967)ADSCrossRefGoogle Scholar
  390. J. I. Pankova, H. Nelson, J. J. Tietjen, I. J. Hegyi, and H. P. Maruska, RCA Review, 28: 560 (1967)Google Scholar
  391. G. L. Pearson, Grant NsG-555, Proj. 5109, NASA-CR-87418 (June 1967), 17 pp.Google Scholar
  392. J. J. Tietjen, J. I. Pankove, I. J. Hegyi, and H. Nelson, Trans. AIME, 239: 385 (1967)Google Scholar
  393. F. V. Williams, Trans. AIME, 239: 702 (1967)Google Scholar
  394. Y. S. Chen, W. Shockley, and G. L. Pearson, Phys. Rev., 151: 648–656 (1966)ADSCrossRefGoogle Scholar
  395. J. K. Howard and R. H. Cox, Adv. X-Ray Anal., 9: 35–50 (1966)Google Scholar
  396. C. J. Nuese, G. E. Stillman, M. D. Sirkis, and N. Holonyak, Jr., Solid-State Electron., 9: 735–749 (1966)ADSCrossRefGoogle Scholar
  397. J. J. Tietjen and J. A. Amick, J. Electrochem. Soc., 113: 724 (1966)CrossRefGoogle Scholar
  398. N. A. Goryunova, G. K. Averkieva, and A. A. Vaipolin, Fiz. Dokl. k XXIII-ei Nauchn. Konf. Leningr. Inzh.-Stroit. Inst., Leningrad (1965), pp. 52–53Google Scholar
  399. N. A. Goryunova et al., Symposium–Protsessy Sinteza i Rosta Kristallov i Plenok Poluprovodnik. Materialov, Tesizy Dokl., Sb., Novosibirsk (1965), pp. 7–8Google Scholar
  400. G. E. Gottlieb, J. Electrochem. Soc., 112: 192 (1965)CrossRefGoogle Scholar
  401. H. T. Minden, J. Electrochem. Soc., 112: 300 (1965)CrossRefGoogle Scholar
  402. M. Rubenstein, J. Electrochem. Soc., 112: 426 (1965)CrossRefGoogle Scholar
  403. C. M. Wolfe, Dissert. Abstr., 26: 2834 (1965)Google Scholar
  404. C. M. Wolfe, C. J. Nuese, and N. Holonyak, Jr., J. Appl. Phys., 36: 3790–3801 (1965)ADSCrossRefGoogle Scholar
  405. Nich Holonyah, Jr., and C. M. Wolfe, Appl. Phys. Letters, 5: 19 (1964)ADSGoogle Scholar
  406. N. C. Tombs, J. F. Fitzgerald, and W. J. Croft, Inorg. Chem., 2: 1073–1074 (1963)CrossRefGoogle Scholar
  407. V. I. Ivanov-omsky, N. K. Kiseleva, and B. T. Kolomiets, Fiz. Tverd. Tela, 3 (5): 1621–1622 (1961)Google Scholar
  408. V. I. Ivanov-omsky, N. K. Kiseleva, and B. T. Kolomiets, Soy. Phys. — Solid State, 3 (5): 1175–1176 (1961)Google Scholar
  409. Werner Koster and Werner Ulrich, Z. Metallk., 49: 365 (1958)Google Scholar
  410. R. G. Hunsperger and O. J. Marsh, Met. Trans., 1: 603–607 (1970)CrossRefGoogle Scholar
  411. W. A. Schmidt and J. E. Davey, Naval Research Lab., Washington, D. C., NRL-7100 (April 23, 1970), 21 pp. (Also AD 705 486 )Google Scholar
  412. T. I. Voronina, Yu. A. Gol’dberg, O. V. Emel’yanenko, and F. P. Kesamanly, Fiz. Tekh. Poluprovod., 3 (10): 1591–1593 (1969)Google Scholar
  413. T. I. Voronina, Yu. A. Gol’dberg, O. V. Emel’yanenko, and F. P. Kesamanly, Sov. Phys.—Semicond., 3 (10): 1338–1339 (1970)Google Scholar
  414. G. W. Arnold and D. K. Brice, Phys. Rev., 178: 1399–1403 (1969)ADSCrossRefGoogle Scholar
  415. G. Horak, Solid-btate Electron., 12: 743–746 (1969)ADSCrossRefGoogle Scholar
  416. R. G. Hunsperger and O. J. Marsh, J. Electrochem. Soc., 116: 488–492 (1969)CrossRefGoogle Scholar
  417. B. D. Lainer, V. V. Voronkov, M. G. Mil’vidskii, and V. V. Rakov, Kristallografiya, 14 (3) 537–539 (1969)Google Scholar
  418. B. D. Lainer, V. V. Voronkov, M. G. Mil’vidskii, and V. V. Rakov, Sov. Phys. —Cryst., 14 (3) 451–453 (1969)Google Scholar
  419. Y.-Z. Liu, J. L. Moll, and W. E. Spicer, Appl. Phys. Letters, 14: 275 (1969)ADSCrossRefGoogle Scholar
  420. E. Nebauer, Phys. Stat. Sol., 33 (1): K51 - K54 (1969)ADSCrossRefGoogle Scholar
  421. O. V. Pelevin and M. G. Mil’vidskii, Inorg. Mater., 5: 1417–1440 (1969)Google Scholar
  422. P. E. Roughan and K. E. Manchester, J. Electrochem. Soc., 116: 278–279 (1969)CrossRefGoogle Scholar
  423. D. Shaw and S. R. Showan, Phys. Stat. Sol., 32: 109–118 (1969)ADSCrossRefGoogle Scholar
  424. Brian Tuck, J. Phys. Chem. Solids, 30: 253–260 (1969)ADSCrossRefGoogle Scholar
  425. B. Tuck, Phys. Stat. Sol., 36285 (1969)Google Scholar
  426. G. R. Antell, Brit. J. Appl. Phys., 1: 113 (1968)Google Scholar
  427. H. C. Casey, Jr., and M. B. Panish, Trans. AIME, 242: 406 (1968)Google Scholar
  428. B. Darek, Darek Arch. Elektrotech., 17: 871–887 (1968)Google Scholar
  429. S. P. Fedotov, V. A. Presnov, and V. K. Bashenov, Japan. J. Appl. Phys., 7: 436 (1968)ADSCrossRefGoogle Scholar
  430. P.-A. Hoss, L. A. Murray, and J. J. Rivera, J. Electrochem. Soc., 115: 553–556 (1968)CrossRefGoogle Scholar
  431. R. G. Hunsperger, H. L. Dunlap, and O. J. Marsh, Hughes Research Labs., Malibu, Calif., Contract NAS12124, Report NASA-CR-86142 (Oct. 1968), 61 pp.Google Scholar
  432. R. G. Hunsperger, O. J. Marsh, and C. A. Mead, Appl. Phys. Letters, 13295 (1968)Google Scholar
  433. C. J. Hwang, J. Appl. Phys., 49: 4307–4312 (1968)ADSCrossRefGoogle Scholar
  434. G. K. Malysk, Fiz. Tverd. Tela, 10: 310 (1968)Google Scholar
  435. G. K. Malysk, Soviet Phys. —Solid State, 10246–247 (1968)Google Scholar
  436. Mitsuhiro Maruyama, Japan. J. Appl. Phys., 7: 476–484 (1968)ADSCrossRefGoogle Scholar
  437. Eugene S. Meieran, Trans. AIME, 242: 413 (1968)Google Scholar
  438. S. N. Mukerjee, P. B. Parikh, and B. L. Sharma, J. Inst. Telecommun. Eng., 14: 236–238 (1968)Google Scholar
  439. O. V. Pelevin and M. G. Mil’vidskii, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (11): 1864–1868 (1968)Google Scholar
  440. O. V. Pelevin and M. G. Mil’vidskii, Inorg. Mater., 4 (11): 1625–1628 (1968)Google Scholar
  441. A. Steinemann, H. R. Winteler, and U. Zimmerli, Helv. Phys. Acta, 41: 1210–1212 (1968)Google Scholar
  442. C. H. Ting and G. L. Pearson, Bull. Am. Phys. Soc., 13: 375 (1968)Google Scholar
  443. N. G. Basov, P. G. Eliseev, I. Ismailov, A. Ya, Nashel’skii, I. Z. Pinsker, and S. V. Yakobson, Fiz. Tverd. Tela, 8(9)2610–2615 (1966)Google Scholar
  444. N. G. Basov, P. G. Eliseev, I. Ismailov, A. Ya, Nashel’skii, I. Z. Pinsker, and S. V. Yakobson, Sov. Phys. —Solid State, 8(9)2087–2092 (1967)Google Scholar
  445. S. J. Bass and P. E. Oliver, Proc. International Symposium on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 41–45Google Scholar
  446. J. F. Black, J. Electrochem. Soc., 114: 1292 (1967)CrossRefGoogle Scholar
  447. J. F. Black and E. D. Jungbluth, J. Electrochem. Soc., 114: 181 (1967)CrossRefGoogle Scholar
  448. J. F. Black and E. D. Jungbluth, J. Electrochem. Soc., 114: 188 (1967)CrossRefGoogle Scholar
  449. J. F. Black and E. D. Jungbluth, J. Electrochem. Soc., 114297 (1967)Google Scholar
  450. B. I. Boltaks and T. D. Dzhafarov, Phys. Stat. Sol., 19: 705 (1967)ADSCrossRefGoogle Scholar
  451. N. Breslau, J. M. Woodall, and C. Lanza, IBM, T. J. Watson Research Ctr., Yorktown Heights, N. Y., 5th qtr. report, 1 July to 30 Sept. 1966, Contract DA 28043 AMC-01550(E), ECOM-01550–5 (Jan. 1967 )Google Scholar
  452. H. C. Casey, M. B. Panish, and L. L. Chang, Phys. Rev., 162: 660 (1967)ADSCrossRefGoogle Scholar
  453. J. L. Fertin, J. Lebailly, J. Thillays, and J. C. Dubois, Proc. International Symposium on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 72–77Google Scholar
  454. H. Frank and S. A. Azim, Solid-State Electron., 10: 727 (1967)ADSCrossRefGoogle Scholar
  455. M. Fujimoto, Y. Sato, and K. Kudo, Japan. J. Appl. Phys., 6: 848 (1967)ADSCrossRefGoogle Scholar
  456. C. J. Hwang, J. Appl. Phys., 38; 4811 (1967)ADSCrossRefGoogle Scholar
  457. K. Kudo, Radioisotopes (Tokyo), 16: 199–203 (1967)Google Scholar
  458. Kh. A. Magomedov, Yu. N. Yarmukhamedov, and N. N. Sheftal’, Kristallografiya, 11 (4): 673–680 (1966)Google Scholar
  459. Kh. A. Magomedov, Yu. N. Yarmukhamedov, and N. N. Sheftal’, Soy. Phys. — Cryst., 11 (4): 578–582 (1967)Google Scholar
  460. R. Sh. Malkovich and G. K. Malysh, Fiz. Tverd. Tela, 9 (2): 553–558 (1967)Google Scholar
  461. R. Sh. Malkovich and G. K. Malysh, Soy. Phys. — Solid State, 9 (2): 423–427 (1967)Google Scholar
  462. O. J. Marsh, R. G. Hunsperger, H. L. Dunlap, and J. W. Mayer, Hughes Research Labs., Malibu, Calif., Contract NAS12–124, NASA-CR-86014 (Oct. 1967), 84 pp.Google Scholar
  463. J. W. Mayer, O. J. Marsh, R. Mankarious, and R. Bower, J. Appl. Phys., 38: 1975 (1967)Google Scholar
  464. Walter Miederer and Richard Doetzer, Siemens A.-G., German Patent, 1,251,288 (Oct. 5, 1967; appl. May 2, 1964 ), 4 pp.Google Scholar
  465. C. van Opdorp, J. Appl. Phys., 38: 5411 (1967)ADSCrossRefGoogle Scholar
  466. V. B. Osvenskii, G. P. Proshko, and M. G. Mil’vidskii, Fiz. Tekhn. Poluprovod., 1 (6): 911–917 (1967)Google Scholar
  467. V. B. Osvenskii, G. P. Proshko, and M. G. Mil’vidskii, Soy. Phys. —Semicond., 1 (6): 755–760 (1967)Google Scholar
  468. M. B. Panish and H. C. Casey, Jr., J. Phys. Chem. Solids, 28: 1673 (1967)ADSCrossRefGoogle Scholar
  469. Manfred H. Pilkuhn and Hans S. Rupprecht, (To International Business Machines Corp.), U. S. Patent 3,349,476 (Cl. 29–590), Oct. 31, 1967 (appl. Nov. 26, 1963), 4 pp.Google Scholar
  470. H. J. Queisser and M. B. Panish, J. Phys. Chem. Solids, 28: 1177 (1967)ADSCrossRefGoogle Scholar
  471. J. B. Schroeder and H. D. Dieselman, Proc. IEEE, 55: 125 (1967)CrossRefGoogle Scholar
  472. H. Strack, Proc. International Symposium on Gallium Arsenide, Reading, Sept. 1966 (1967), pp. 206–212Google Scholar
  473. Andrzej Uszynski, Przegl. Elektron., 8 (12): 597–599 (1967)Google Scholar
  474. W. Von Muench, Solid-State Electron., 9: 619 (1966)ADSCrossRefGoogle Scholar
  475. C. J. Nuese, G. E. Stillman, M. D. Sirkis, and N. Holonyak, Jr., Solid-State Electron., 9: 735 (1966)ADSCrossRefGoogle Scholar
  476. R. F. Peart, K. Weiser, J. Woodall, and R. Fern, Thomas J. Watson Research Center, Yorktown Heights, NC-624 (June 1966)Google Scholar
  477. N. P. Sazhin, M. G. Mil’vidskii, V. B. Osvenskii, and O. G. Stolyarov, Fiz. Tverd. Tela, 8 (5): 1539–1544 (1966)Google Scholar
  478. N. P. Sazhin, M. G. Mil’vidskii, V. B. Osvenskii, and O. G. Stolyarov, Sov. Phys. — Solid State, 8 (5): 1223–1227 (1966)Google Scholar
  479. D. A. Shaw, K. A. Hughes, N. F. B. Neve, D. V. Sulway, P. R. Thornton, and C. Gooch, Solid-State Electron., 9: 664 (1966)ADSCrossRefGoogle Scholar
  480. Kwang Kuo Shih, Stanford Univ., Calif., Ph. D. thesis (1966), 80 pp. University Microfilms, Ann Arbor, Mich.Google Scholar
  481. S. Yamashita, T. Kajiwara, T. Abe, and T. Nakano, Japan. J. Appl. Phys., 5: 843 (1966)ADSCrossRefGoogle Scholar
  482. G. H. Gooch, Phys. Letters., 14: 183 (1965)ADSCrossRefGoogle Scholar
  483. HP Associates, Palo Alto, California, interim engineering rept. No. 6, 15 July - 15 Oct. 1965, Contract NObsr-89489, AD-620267 (Oct. 1965 ), 46 pp.Google Scholar
  484. R. A. Sehr, Korad Corporation, Santa Monica, California, third quarterly progress report - 1 Jan. through 31 March 1965, (July 1965), Contract DA 28–043 AMC-00235 (E)Google Scholar
  485. H. Becks, D. Flatley, W. Kern, and D. Stolnitz, Trans. AIME, 230: 307 (1964)Google Scholar
  486. J. Black, J. Electrochem. Soc., 111: 924 (1964)CrossRefGoogle Scholar
  487. B. I. Boltaks, T. D. Dzhafarov, V. I. Sokolov, and F. S. Shishiyanu, Fiz. Tverd. Tela, 6 (5): 1511–1519 (1964)Google Scholar
  488. B. I. Boltaks, T. D. Dzhafarov, V. I. Sokolov, and F. S. Shishiyanu, Sov. Phys.–Solid State, 6 (5): 1181–1188 (1964)Google Scholar
  489. P. Gansauge, Phys. Verh. Dtsch., 15: 91 (1964)Google Scholar
  490. L. Li-Gong Chang, Stanford Univ., California, Dissertation Abstr., 25: 1094 (1964)Google Scholar
  491. Rajendra Mehta, SEL-64–062; AROD-2895–15; AD-610262 (June 1964). 71 pp. Contract DA-31–124-ARO(D)-155; AF 33(616)-7726Google Scholar
  492. H. Rupprecht and C. Z. LeMay, J. Appl. Phys., 35: 1970 (1964)Google Scholar
  493. A. Shirata, Solid-State Electron., 7 215 (1964)ADSCrossRefGoogle Scholar
  494. S. R. Shortes, J. A. Kanz, and E. C. Wurst, Jr., Trans. AIME, 230: 300 (1964)Google Scholar
  495. V. J. Silverstri and F. Fang, J. Electrochem. Soc., 111: 1164 (1964)CrossRefGoogle Scholar
  496. L. R. Weisberg, Trans. AIME, 230291 (1964)Google Scholar
  497. R. W. Fane and A. J. Goss, Solid-State Electron., 6: 383 (1963)ADSCrossRefGoogle Scholar
  498. J. O. McCaldin, J. Appl. Phys., 34: 1748 (1963)ADSCrossRefGoogle Scholar
  499. G. L. Pearson, M. G. Buehler, and N. C. Berglund, Bull. Am. Phys. Soc., 8229 (1963)Google Scholar
  500. L. R. Weisberg and J. Blanc, Phys. Rev., 131: 1548 (1963)ADSCrossRefGoogle Scholar
  501. K. Weiser, J. Appl. Phys., 34: 3387 (1963)ADSCrossRefGoogle Scholar
  502. T. H. Yeh, J. Electrochem. Soc., 110: 341 (1963)CrossRefGoogle Scholar
  503. R. L. Longini, Solid-State Electron., 5: 127 (1962)ADSCrossRefGoogle Scholar
  504. B. Goldstein, Compound Semiconductors, Vol. 1 (R. K. Willardson and H. L. Goering, eds.), Reinhold Publishing Corp., New York (1962), p. 345Google Scholar
  505. J. F. Black, J. Electrochem. Soc., 108: 178C (1961)Google Scholar
  506. B. Goldstein, Phys. Rev., 121: 1305 (1961)ADSCrossRefGoogle Scholar
  507. L. J. Vieland, J. Phys. Chem. Solids, 21: 318 (1961)ADSCrossRefGoogle Scholar
  508. J. W. Allen, J. Phys. Chem. Solids, 15: 134 (1960)ADSCrossRefGoogle Scholar
  509. F. A. Cunnell and C. H. Gooch, J. Phys. Chem. Solids, 15: 127 (1960)ADSCrossRefGoogle Scholar
  510. B. Goldstein, Phys. Rev., 118: 1024 (1960)ADSCrossRefGoogle Scholar
  511. D. L. Kendall and M. E. Jones, Electrochemical Society Meeting, May 1960; Solid State Device Research Conference, June 1960Google Scholar
  512. J. Lowen and R. H. Rediker, J. Electrochem. Soc., 10726 (1960)Google Scholar
  513. A. Shirata, J. Phys. Soc. Japan, 152107 (1960)Google Scholar
  514. J. W. Allen and F. A. Cunnell, Nature, 182: 1158 (1958)ADSCrossRefGoogle Scholar
  515. M. Ya. Dashevskii, G. V. Kukuladze, and M. S. Mirgalovskaya, Izv. Akad. Nauk SSSR, Neorg. Mater., 6(7):1239–1241 (1970) In RussianGoogle Scholar
  516. A. Halak and Z. Olempska, Elektronika, 4: 176–178 (1970)Google Scholar
  517. M. Kakehi, R. Shimokawa, and T. Arizumi, Japan. J. Appl. Phys., 9 (9): 1039–1044 (1970)ADSCrossRefGoogle Scholar
  518. M. Ya. Dashevskii, G. V. Kukuladze, V. B. Lazarev, and M. S. Mirgalovskaya, Rost Kristallov, Izd. Akad. Nauk, SSSR (1968), pp. 104–107 Growth of Crystals, Vol. 8 (A. V. Shubnikov and N. N., Sheftal’, eds.) Consultants Bureau, New York (1969), pp. 85–90Google Scholar
  519. M. Ya. Dashevskii, G. V. Kukuladze, and M. S. Mirgalovskaya, Izv, Akad. Nauk SSSR, Neorg. Mater., 5 (6): 1141–1142 (1969)Google Scholar
  520. M. Ya. Dashevskii, G. V. Kukuladze, and M. S. Mirgalovskaya, Inorg. Mater., 5 (6): 974–975 (1969)Google Scholar
  521. N. L. Gryazeva, Sh. M. Mavlonov, and V. N. Vigdorovich, Dokl. Akad. Nauk Tadzh. SSR, 12: 19–22 (1969)Google Scholar
  522. J. J. Tietjen, R. Clough, R. E. Enstrom, and M. Ettenberg, Contract NAS12–538, QTR.-8; NASA-CR-86306 (Sept. 1969), 14 pp.Google Scholar
  523. A. Nguyen van Mau, C. Ance and G. Bougnot, Mat. Res. Bull., 3: 901–910 (1968)CrossRefGoogle Scholar
  524. M. S. Mirgalovskaya, G. V. Kukuladze, and A. V. Kokoshkin, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (5): 694–700 (1968)Google Scholar
  525. M. S. Mirgalovskaya, G. V. Kukuladze, and A. V. Kokoshkin, Inorg. Mater., 4 (5): 606–612 (1968)Google Scholar
  526. R. S. Mroczkowski, A. F. Witt, and H. C. Gatos, J. Electrochem. Soc., 118: 545–547 (1968)CrossRefGoogle Scholar
  527. W. R. Turnbull, NOLC Rept. 745 (Naval Weapons Center Corona Laboratories, Corona, Cal. 91720), March 1, 1968, Contract AIRTASK No. A31533212/2111/R008–03–02 Supplement to NOLC Rept. 712Google Scholar
  528. M. Ya. Dashevskii and others, Dokl. Akad. Nauk SSSR, 172: 403–406 (1967)Google Scholar
  529. Y. J. van der Meulen, J. Phys. Chem. Solids, 28: 25–32 (1967)ADSCrossRefGoogle Scholar
  530. V. S. Vekshina, L. G. Elanskaya, and L. Ya. Krol, Zavod. Lab., 33 (2): 200 (1967)Google Scholar
  531. G. Cohen-Solal, Y. Marfaing, and F. Bailly, Rev. Phys. Appl., 1: 11–17 (1966)CrossRefGoogle Scholar
  532. G. M. Orlova and V. P. Bruenkova, Zh. Prikl. Khim., 39: 2644–2649 (1966)Google Scholar
  533. F. J. Reid, R. D. Baxter, and S. E. Miller, J. Electrochem. Soc., 113: 713 (1966)CrossRefGoogle Scholar
  534. E. J. Johnson, Dissertation Abstr., 26:1122 (1965) University Microfilms, Ann Arbor, Michigan 48103Google Scholar
  535. Donald Long and Robert J. Hager, J. Appl. Phys., 36: 3436 (1965)ADSCrossRefGoogle Scholar
  536. Martinus Henricus van Maaren, Thesis, March, 1965, Rijksuniversiteit of UtrechtGoogle Scholar
  537. M. S. Mirgalovskaya, V. V. Sakharov, and O. G. Karpinskii, Simp. Protsessy Sint. Rosta Krist. Plenok Poluprov. Mater., Tezisy Dokl. (Novosibirsk, 22, 1965 )Google Scholar
  538. Takeshi Miyauchi and Hazimu Sonomura, Japan. J. Appl. Phys., 4: 317–318 (1965)ADSCrossRefGoogle Scholar
  539. J. R. Peloke, R. R. Stone, and L. R. Yetter, Solid-State Electron., G. B., 8: 861–867 (1965)ADSCrossRefGoogle Scholar
  540. George Petit-Le Du, J. Phys. (Paris), Suppl., 26: 185–189A (1965)Google Scholar
  541. John L. Richards, AFCRL-65–412, April 30, 1965, Contract AF 19(628)-2937Google Scholar
  542. G. A. Wolff and A. I. Mlaysky, Colloq. Intern. C.N.R.S., No. 152, Adsorption et croissance cristalline, Nancy, June 6–12, 1965 Centre National de la Recherche Scientifique, 15, quai Anatole-France-Paris 7c (1965)Google Scholar
  543. A. Sagar, Phys. Rev., 117: 93–100 (1960)ADSCrossRefGoogle Scholar
  544. David F. Edwards and George S. Hayne, J. Opt. Soc. Am., 49: 414–415 (1959)CrossRefGoogle Scholar
  545. G. Wolff, P. H. Keck, and J. D. Broder, Phys. Rev., 94: 753 (1954)Google Scholar

10.e. Indium Compounds

  1. P R. C. Clarke, B. D. Joyce, and W. H. E. Wilgoss, Solid State Commun., 8: 1125–1128 (1970)ADSCrossRefGoogle Scholar
  2. N. R. Aigina, M. A. Gurevich, N. M. Demenkov, L. A. Zhukova, V. N. Maslov, and B. A. Sakharov, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (1): 175–176 (1967)Google Scholar
  3. N. R. Aigina, M. A. Gurevich, N. M. Demenkov, L. A. Zhukova, V. N. Maslov, and B. A. Sakharov, Inorg. Mater., 3 (1): 144–146 (1967)Google Scholar
  4. Ya. A. Ugai, L. A. Bityutskaya, and A. D. Popova, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (11): 1988–1993 (1967)Google Scholar
  5. Ya. A. Ugai, L. A. Bityutskaya, and A. D. Popova, Inorg. Mater., 3 (11): 1730–1734 (1967)Google Scholar
  6. V. Ya. Chernzkh and N. D. Talanov, Zh. Neorg. Khim., 11: 971–976 (1966)Google Scholar
  7. R. J. Guire and K. Weiser, RCA, U. S. Patent 2,871, 100, Jan. 1959Google Scholar
  8. J.-C. Transhart, Acta Electronica, 13: 13–20 (1970)Google Scholar
  9. B. P. Pyregov, I. S. Aver’yanov, S. V. Mashin, and A. S. Krasnov, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (9): 1474–1477 (1968)Google Scholar
  10. B. P. Pyregov, I. S. Aver’yanov, S. V. Mashin, and A. S. Krasnov, Inorg. Mater., 4 (9): 1289–1291 (1968)Google Scholar
  11. M. A. C. S. Brown and P. Porteous, Solid-State Electron., 10: 76–77 (1967) Liquid-phase epitaxyGoogle Scholar
  12. G. R. Cronin and S. R. Borrello, J. Electrochem. Soc., 114: 1079 (1967)CrossRefGoogle Scholar
  13. Kh. D. Koppel, Z. S. Medvedeva, and N. P. Luzhnaya, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (2): 300–310 (1967)Google Scholar
  14. Kh. D. Koppel, Z. S. Medvedeva, and N. P. Luzhnaya, Inorg. Mater., 3 (2): 267–274 (1967)Google Scholar
  15. J. P. McCarthy, Solid-State Electron., 10: 649–655 (1967)ADSCrossRefGoogle Scholar
  16. G. R. Cronin, R. W. Conrad, and S. R. Borrello, J. Electrochem. Soc., 113: 1336 (1966)CrossRefGoogle Scholar
  17. H. Blumberg, Exper. Tech. Phys., 13: 414–419 (1965)Google Scholar
  18. Masami Yokozawa, Morio Inoue, Rikusei Kohara, and Yoichi Okabayashi, Japan. J. Appl. Phys., 4: 546 (1965)ADSCrossRefGoogle Scholar
  19. R. H. Harada and A. J. Strauss, J. Appl. Phys., 30: 121 (1959)ADSCrossRefGoogle Scholar
  20. E. A. Dem’yanov, Sov. Phys.–Cryst., 15 (4): 690–692 (1971)Google Scholar
  21. R. P. Howson and V. Malin, J. Phys. D, Appl. Phys., 3: 871–876 (1970)ADSCrossRefGoogle Scholar
  22. O. Roder, U. Heim, and M. H, Pilkuhn, J. Phys. Chem. Solids, 31: 2625–2634 (1970)ADSCrossRefGoogle Scholar
  23. A. F. Witt, C. J. Herman, and H. C. Gatos, J. Materials Sci., 5: 822–824 (1970)ADSCrossRefGoogle Scholar
  24. M. I. Dashevski, V. V. Khasikov, and L. I. Gutman, Izv. Akad. Nauk SSSR, Neorg. Mater., 5 (9): 1491–1495 (1969)Google Scholar
  25. M. I. Dashevski, V. V. Khasikov, and L. I. Gutman, Inorg. Mater., 5 (9): 1267–1270 (1969)Google Scholar
  26. Gary L. Dorer and Hans E. Bommel, J. Appl. Phys., 40: 670 (1969)ADSCrossRefGoogle Scholar
  27. U. M. Kulish and A. P. Vyatkin, Rost Kristallov, Izd. Akad. Nauk SSSR (1968), pp. 59–62 Growth of Crystals, Vol. 8 (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1969) pp. 72–77Google Scholar
  28. U. Merten, K. D. Vos, and A. P. Hatcher, J. Phys. Chem. Solids, 30: 627–641 (1969)ADSCrossRefGoogle Scholar
  29. Yu. G. Nosov, P. I. Antonov, and A. V. Stepanov, Izv. Akad. Nauk SSSR, Ser. Fiz., 33: 2008–2009 (1969)Google Scholar
  30. August F. Witt and Harry C. Gatos, Electrochem. Soc., 116: 511–513 (1969)CrossRefGoogle Scholar
  31. M. Ya. Dashevskii, L. S. Okun, and G. Z. Plotkina, Moscow Institute of Steel and Alloys, U.S.S.R. 228,792 (Oct. 17, 1968 ); Izobret. Prom. Obraztsy, Tovarnye Znaki, 45: 40 (1968)Google Scholar
  32. M. Ya. Dashevskii and A. N. Poterukhin, Izv. Akad. Nauk SSSR, Neorg. Mater., 4 (9): 1478–1482 (1968)Google Scholar
  33. M. Ya. Dashevskii and A. N. Poterukhin, Inorg. Mater., 4 (9): 1292–1295 (1968)Google Scholar
  34. N. M. Demenkov and V. N. Maslov, Kristallografiya, 12 (4): 737–738 (1967)Google Scholar
  35. N. M. Demenkov and V. N. Maslov, Soy. Phys. -Cryst., 12 (4): 650–651 (1968)Google Scholar
  36. Raymond W. Hamaker and William B. White, J. Appl. Phys., 39: 1758 (1968)ADSCrossRefGoogle Scholar
  37. L. P. Kalnach, Rost Kristallov, Izd. Akad. Nauk SSSR (1965), pp. 365–373Google Scholar
  38. L. P. Kalnach, Rost Kristallov, Growth of Crystals, Vol. 6B (A. V. Shubnikov and N. N. Sheftal’, eds.) Consultants Bureau, New York (1968), pp. 170–179Google Scholar
  39. K. Morizone, A. F. Witt, and H. C. Gatos, J. Electrochem. Soc., 115: 747 (1968)CrossRefGoogle Scholar
  40. W. V. Ramana and P. R. Dastidar, J. Inst. Telecomm. Engrs., 14: 287–295 (1968)Google Scholar
  41. S. K. Sharma and V. K. Jain, Solid-State Electron., 11: 423–428 (1968)ADSCrossRefGoogle Scholar
  42. August F. Witt and Harry C. Gatos, J. Electrochem. Soc., 115: 70 (1968)CrossRefGoogle Scholar
  43. K. C. Barua and A. Goswami, Indian J. Pure Appl. Phys., 5: 480–481 (1967)Google Scholar
  44. R. Cadoret and J. C. Monier, J. Crystal Growth, 1: 59–66 (1967)ADSCrossRefGoogle Scholar
  45. W. Gilbert Clark and R. A. Isaacson, J. Appl. Phys., 38: 2284 (1967)ADSCrossRefGoogle Scholar
  46. K. Morizane, A. Witt, and H. C. Gatos, J. Electrochem. Soc., 114: 738 (1967)CrossRefGoogle Scholar
  47. Susumu Namba, Akira Kawazu, Norio Kanekama and Toshiaki Akimoto, Japan. J. Appl. Phys., 6: 1464–1465 (1967)ADSCrossRefGoogle Scholar
  48. N. F. Teede, Proc. Inst. Radio Electron. Engrs. Australia, 28: 115–117 (1967)Google Scholar
  49. N. F. Teede, Solid State Electron., 10: 1069–1076 (1967)ADSCrossRefGoogle Scholar
  50. Viliam Benc and Marian Morvic, Elektrotech. Casopis XVII, Cislo, 6: 458–460 (1966)Google Scholar
  51. A. R. Murray, J. A. Baldrey, J. B. Mullin, and O. Jones, J. Mater. Sci., 1: 14–28 (1966)ADSCrossRefGoogle Scholar
  52. H. P. Utech and M. C. Flemings, J. Appl. Phys., 372021 (1966)Google Scholar
  53. L. K. Vodop’yanov and N. I. Kurdiani, Fiz. Tverd. Tela, 8 (1): 72–76 (1966)Google Scholar
  54. L. K. Vodop’yanov and N. I. Kurdiani, Sov. Phys.–Solid State, 8 (1): 55–58 (1966)Google Scholar
  55. A. F. Witt and H. C. Gatos, J. Electrochem. Soc., 113: 808 (1966)CrossRefGoogle Scholar
  56. A. A. Chernov, Vestn. Akad. Nauk SSSR (Moscow), 3:122–123 (1964), FTD-TT-65–538/1 + 4; AD-619470 (July 1965), 8 pp.Google Scholar
  57. K. F. Hulme, (Royal Radar Establishment, Malvern, Worcs., England) Materials Used in Semiconductor Devices (C. A. Hogarth, ed.), Interscience Publishers, New York, London, Sydney (1965), p. 115Google Scholar
  58. S. G. Parker, O. W. Wilson, and B. H. Barbee, J. Electrochem. Soc., 112: 80 (1965)CrossRefGoogle Scholar
  59. J. L. Richards, Philco Applied Research Lab., Blue Bell, Penn., final report covering period 1 Oct. 1964 to 30 March 1965, Contract AF 19(628)-2937. AFCRL-65–412 (April 1965 )Google Scholar
  60. E. A. D. White, Brit. J. Appl. Phys., 16: 1415 (1965)ADSCrossRefGoogle Scholar
  61. C. Juhasz and J. C. Anderson, Phys. Letters, 12: 163 (1964)ADSCrossRefGoogle Scholar
  62. I. A. Mirckhulava, Z. N. Chigogidze, N. I. Kurdiani, L. V. Khvedelidze, and R. B. Dzhanelidze, Soobshch. Akad. Nauk Gruz. SSR, 35: 299 (1964)Google Scholar
  63. A. Muller and M. Wilhelm, Z. Naturforsch., 19: 254 (1964)ADSGoogle Scholar
  64. G. Veiss, Izv. Akad. Nauk SSSR, Ser. Fiz., 28: 969 (1964)Google Scholar
  65. N. Albon and A. E. Owen, J. Phys. Chem. Solids, 24: 899 (1963)ADSCrossRefGoogle Scholar
  66. H. Nicholson and J. W. Faust, Jr., J. Electrochem. Soc., 110: 940 (1963)CrossRefGoogle Scholar
  67. J. L. Richards, P. B. Hart, and L. M. Gallone, J. Appl. Phys., 34: 3418 (1963)ADSCrossRefGoogle Scholar
  68. R. G. Seidensticker and D. R. Hamilton, J. Phys. Chem. Solids, 24: 1587 (1963)CrossRefGoogle Scholar
  69. K. I. Vinogradova, V. V. Golovanov, and D. N. Nasledov, Fiz. Metal. i Metalloved., 16: 385–393 (1963)Google Scholar
  70. T. Cheron, Aerospace Corp., El Segundo, California, Bibliography (1950–61, Contract AF 04(647)930, AD-274642 (Jan. 1962)Google Scholar
  71. K. F. Hulme and J. B. Mullin, Solid-State Electron., 5211 (1962)Google Scholar
  72. F. D. Loomis, C. W. Graver, and I. Mockrin, Penn-Salt Chemicals Corp., Wyndmoor, Pa., Technical Report No. 1, Contract Nonr-3142(00), NR No. 356–423 (1962)Google Scholar
  73. A. J. Strauss, Solid-State Electron., 5: 97 (1962)ADSCrossRefGoogle Scholar
  74. H. C. Gorton, A. R. Zacaroli, F. J. Reid, and C. S. Peet, J. Electrochem. Soc., 108: 354 (1961)CrossRefGoogle Scholar
  75. R. K. Mueller and R. L. Jacobson, J. Appl. Phys., 33: 550 (1961)ADSCrossRefGoogle Scholar
  76. W. P. Allred and R. K. Willardson, Battelle Memorial Inst., Columbus, Ohio, 1960 Spring Meeting Electrochem. Soc.Google Scholar
  77. H. C. Gatos, P. L. Moody, and M. C. Lavine, J. Appl. Phys., 31: 212 (1960)ADSCrossRefGoogle Scholar
  78. M. S. Mirgalovskaya and L. I. Matkova, Zh. Neorgan. Khim., 5: 1551–1554 (1960)Google Scholar
  79. J. B. Mullin, Royal Radar Establishment, Gt. Malvern, Worcs., England, 1960 Spring Meeting Electrochem. Soc.Google Scholar
  80. J. B. Mullin and K. F. Hulme, J. Phys. Chem. Solids, 17: 1 (1960)ADSCrossRefGoogle Scholar
  81. K. F. Hulme and J. B. Mullin, Phil. Mag., 4: 1286 (1959)ADSCrossRefGoogle Scholar
  82. H. T. Minden, Semicond. Prod., 2: 30 (1959)Google Scholar
  83. K. I. Vinogradova, V. V. Talavanova, D. N. Nasledov, and L. I. Solov’eva, Fiz. Tverd. Tela, 1 (3): 403–406 (1959)Google Scholar
  84. K. I. Vinogradova, V. V. Talavanova, D. N. Nasledov, and L. I. Solov’eva, Sov. Phys. -Solid State, 1 (3): 364–367 (1959)Google Scholar
  85. W. D. Lawson and S. Nielsen, Butterworths Publ. and Acad. Press, New York (1958), p. 255Google Scholar
  86. Siemens and Halske, Brit. Pat. 806,697 (issued Dec. 31, 1958 )Google Scholar
  87. M. F. Millea and C. T. Tomizuka, J. Appl. Phys., 27: 96 (1956)ADSCrossRefGoogle Scholar
  88. H. A. Allen and E. W. Mehal, J. Electrochem. Soc., 117: 1081–1082 (1970)CrossRefGoogle Scholar
  89. R. O. Bell, S. C. Foote, C. B. Lamport, A. A. Menna, and G. A. Wolff (Tyco Labs., Inc., Waltham, Mass.), NASA-CR-113907 (July 1970), 60 pp.Google Scholar
  90. R. D. Burnham, N. Holonyak, Jr., D. L. Keune, D. R. Scifres, and P. D. Dapkus, Appl. Phys. Letters, 17: 430–432 (1970)ADSGoogle Scholar
  91. L. A. Egorov and O. D. Torbova, Izv. Akad. Nauk SSSR, Neorg. Mater., 5:173–174 (1969) Inorg. Mater., 5: 144–145 (1969)Google Scholar
  92. C. Hilsum, Royal Radar Establishment Newsletter and Research Review, No.8 (1969), pp. 5/1–5/2Google Scholar
  93. J. J. Tietjan, H. P. Maruska, and R. B. Clough, J. Electrochem. Soc., 114: 492–494 (1969)CrossRefGoogle Scholar
  94. Ya. A. Ugai, E. G. Goncharov, Z. V. Kitina, and T.N. Shvyreva, Izv. Akad, Nauk SSSR, Neorg. Mater., 4 (3): 348–351 (1968)Google Scholar
  95. Ya. A. Ugai, E. G. Goncharov, Z. V. Kitina, and T.N. Shvyreva, Inorg. Mater., 4 (3): 291–293 (1968)Google Scholar
  96. L. A. Egorov, P. V. Shakhanov, O. D. Torbova, and I. V. Gordeev, Izv. Akad. Nauk SSSR, Neorg. Mater., 3 (5): 881–883 (1967)Google Scholar
  97. L. A. Egorov, P. V. Shakhanov, O. D. Torbova, and I. V. Gordeev, Inorg. Mater., 3 (5): 787–789 (1967)Google Scholar
  98. W. Burns, S. Kaye, D. B. Medved, M. B. Prince, and G. P. Rolik, J. Appl. Phys., 38: 5388 (1967)ADSCrossRefGoogle Scholar
  99. N. G. Basov, A. V. Dudenkova, A. I. Krasil’nikov, V. V. Nikitin, and K. P. Fedoseev, Fiz. Tverd. Tela, 8 (4): 1060–1063 (1966)Google Scholar
  100. N. G. Basov, A. V. Dudenkova, A. I. Krasil’nikov, V. V. Nikitin, and K. P. Fedoseev, Sov. Phys.- Solid State, 8 (4): 847–849 (1966)Google Scholar
  101. E. W. Mehal and G. R. Cronin, Electrochem. Tech., 4: 540 (1966)Google Scholar
  102. I. S. Baukin, V. I. Ivanov-Omskii, and B. T. Kolomiets, News of the Acad. of Sci, of the USSR (June 5, 1965 ), pp. 23–26Google Scholar
  103. V. I. Ivanov-Omskii, N. K. Kiseleva, and B. T. Kolomiets, Fiz, Tverd. Tela, 3 (5): 1621 (1961)Google Scholar
  104. V. I. Ivanov-Omskii, N. K. Kiseleva, and B. T. Kolomiets, Sov. Phys.-Solid State, 3 (5): 1175–1176 (1961)Google Scholar

Copyright information

© IFI/Plenum Data Corporation 1972

Authors and Affiliations

  • T. F. Connolly
    • 1
  1. 1.Research Materials Information Center, Solid State DivisionOak Ridge National LaboratoryOak RidgeUSA

Personalised recommendations