Gallium-Indium-Phosphorus System

  • M. Neuberger


Gallium Arsenide Liquid Phase Epitaxy Photoluminescence Excitation Indium Phosphide Gallium Phosphide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Gallium-Indium-Phosphide Bibliography

  1. ABAGYAN, S.A. and V.K. SUBASHIEV. Direct Transitions and Spin-Orbital Splitting of the Valence Band in Gallium Phosphide. SOVIET PHYS. SOLID STATE, v. 6, no. 10, Apr. 1965. p. 2529–2530.Google Scholar
  2. ALIBERT, C. et al. Study of Gallium Indium Phosphides by Electroreflectivity (In Fr.). ACAD. DES SCI., C.R., v. 274, no. 9, Ser. B, Feb. 28, 1972. p. 653–655.Google Scholar
  3. BACHRACH, R.Z. and B.W. HAKKI. Radiative Processes in Direct and Indirect Band Gap In1-xGaxP. J. OF APPLIED PHYS., v. 42, no. 12, Nov. 1971. p. 5102–5108.CrossRefGoogle Scholar
  4. BURNHAM, R.D. et al. Stimulated Emission in In Ga P. APPLIED PHYS. LETTERS, v. 17, no. 10, Nov. 15, 1970. p. 430–432.Google Scholar
  5. BURNHAM, R.D. et al. Spectral Behavior, Carrier Lifetime, and Pulsed and cw Laser Operation (77°K) of In1_xGaxP. APPLIED PHYS. LETTERS, v. 18, no. 4, Feb. 15, 1971. p. 160–162.Google Scholar
  6. DEAN, P.J. et al. Intrinsic Optical Absorption of Gallium Phosphide Between 2.33 and 3.12 eV. J. OF APPLIED PHYS., v. 38, no. 9, Aug. 1967. p. 3551–3556.CrossRefGoogle Scholar
  7. FOSTER, L.M. and J.E. SCARDEFIELD. The Solidus Boundary in the GaP-InP Pseudobinary System. ELECTROCHEM. SOC., J., v. 117, no. 4, Apr. 1970. p. 534–536.CrossRefGoogle Scholar
  8. GIESECKE, G. and H. PFISTER. Precision Determination of the Lattice Constant of III-V Compounds. ACTA CRYSTALLOGRAPHICA, v. 11, 1958. p. 369–371.CrossRefGoogle Scholar
  9. HAKKI, B.W. Growth of Inl_xGaxP p-n Junction by Liquid phase Epitaxy. ELECTROCHEM. SOC., J., v. 118, no. 9, Sept. 1971. p. 1469–1473.CrossRefGoogle Scholar
  10. HAKKI, B.W. et al. Band Structure of InGaP from Pressure Experiments. J. OF APPLIED PHYS., v. 41, no. 13, Dec. 1970. p. 5291–5296.CrossRefGoogle Scholar
  11. ITOH, H. et al. Reproducible Preparation of Homogeneous Inl_xGaxP Mixed Crystals. APPLIED PHYS. LETTERS, v. 19, no. 9, Nov. 1, 1971. p. 348–349.Google Scholar
  12. KAJIYAMA, K. The In-Ga-P Ternary Phase Diagram. JAPAN. J. OF APPL. PHYS., v. 10, no. 5, May 1971. p. 561565.Google Scholar
  13. KOESTER, W. and W. ULRICH. Isomorphy in III-V Compounds (In Ger.). Z. FUER METALLKUNDE, v. 49, no. 7, July 1956. p. 365–367.Google Scholar
  14. KYSER, D.S. et al. Indirect Transitions in GaP via Electroreflectance and Electroabsorption. AMERICAN PHYS. SOC., BULL., Ser. 2, v. 15, no. 3, Mar. 1970. p. 288.Google Scholar
  15. LAUGIER, A. and J. CHEVALLIER. About the Band Structure of GaxInl_xP Alloys. SOLID STATE COMMUNICATIONS, v. 10, no. 4, Feb. 1972. p. 353–356.CrossRefGoogle Scholar
  16. LETTINGTON, A.H. et al. Thermoreflectance Studies of Thin Epitaxially Deposited (InGa)P Alloys. J. OF PHYS, C, v. 4, no. 12, Aug. 1971. p. 1534–1539.CrossRefGoogle Scholar
  17. LOGAN, R.A. et al. Electroluminescence in GaAsxP1-x, InxGal_xP, and AlxGa1-xP Junctions with x about 0.01. J. OF APPLIED PHYS., v. 42, no. 6, May 1971. p. 2328–2335.CrossRefGoogle Scholar
  18. LORENZ, M.R. et al. Band Structure and Direct Transition Electroluminescence in the Inl_xGaxP Alloys. APPLIED PHYS. LETTERS, v. 13, no. 12, Dec. 15, 1968. p. 421–423.Google Scholar
  19. LUCOVSKY, G. et al. Long-Wavelength Optical Phonons in Gai_xInxP. PHYS. REV., B, Ser. 3, v. 4, no. 6, Sept. 15, 1971. p. 1945–1949.Google Scholar
  20. MABBITT, A.W. The Cathodoluminescence of GaxInl_xP Alloys. SOLID STATE COMMUNICATIONS, v. 9, no. 3, Feb. 1971. p. 245–247.CrossRefGoogle Scholar
  21. MACKSEY, H.M. et al. Inl_xGaxP p-n Junction Lasers. APPLIED PHYS. LETTERS, v. 19, no. 8, Oct. 15, 1971. p. 271–273.Google Scholar
  22. NUESE, C.J. et al. The Preparation and Properties of Vapor-Grown Ini_xGaxP. METALLURGICAL TRANS., v. 2, no. 3, Mar. 1971. p. 789–794.CrossRefGoogle Scholar
  23. ONTON, A. and R.J. CHICOTKA. Photoluminescence Processes in Inl_xGaxP at 2°K. PHYS. REV. B, Ser. 3, v. 4, no. 6, Sept. 15, 1971. p. 1847–1853.Google Scholar
  24. ONTON, A. et al. Electronic Structure and Luminescence Processes in Inl_xGaxP Alloys. J. OF APPLIED PHYS., v. 42, no. 9, Aug. 1971. p. 3420–2432. [A]Google Scholar
  25. ONTON, A. et al. Direct Optical Observation of the Subsidiary Xlc Conduction Band and Its Donor Levels in InP. AMERICAN PHYS. SOC., BULL., v. 17, no. 3, Ser. 11, Mar. 1972. p. 326.Google Scholar
  26. PANISH, M.B. and H.C. CASEY, JR. Temperature Dependence of the Energy Gap in Gallium Arsenide and Gallium Phosphide. J. OF APPLIED PHYS., v. 40, no. 1, Jan. 1969. p. 163–167.CrossRefGoogle Scholar
  27. PIERRON, E.D. et al. Coefficient of Expansion of Gallium Arsenide, Gallium Phosphide and Gallium Arsenic Phosphide Compounds from 62 to 200°C. J. OF APPLIED PHYS., v. 38, no. 12, Nov. 1967. p. 4669–4671.CrossRefGoogle Scholar
  28. RICHMAN, D. Dissociation Pressure of Gallium Arsenide, Gallium Phosphide and Indium Phosphide and the Nature of III-V Melts. J. OF PHYS. AND CHEM. OF SOLIDS, v. 24, no. 9, Sept. 1963. p. 1131–1139.CrossRefGoogle Scholar
  29. RODOT, H. et al. Preparation and Optical Properties of Gallium-Indium Phosphorus Alloys (In Fr.). ACAD. DES SCI., C.R., v. 269, no. 9, Ser. B, Sept. 1, 1969. p. 381–384.Google Scholar
  30. SCIFRES, D.R. et al. Optically Pumped Ini_xGaxP Platelet Lasers from the Infrared to the Yellow (8900–5800 Â, 77°K). J. OF APPLIED PHYS., v. 43, no. 3, Mar. 1972. p. 1019–1022.CrossRefGoogle Scholar
  31. SCIFRES, D.R. et al. Optically Pumped Volume-Excited cw Room Temperature Inl_xGaxP (x =0.60) Platelet Lasers. APPLIED PHYS. LETTERS, v. 20, no. 5, Mar. 1972. p. 184–186.Google Scholar
  32. TURNER, W.J. et al. Exciton Absorption and Emission in Indium Phosphide. PHYS. REV., v$1136, no. 5A, Nov. 1964. p. A1467 - A1470.Google Scholar
  33. WHITE, A.M. et al. Applications of Photoluminescence Excitation Spectroscopy to the Study of Indium Gallium Phosphide Alloys. J. OF PHYS., D, v. 3, no. 9, Sept. 1970. p. 1322–1328.CrossRefGoogle Scholar
  34. WHITE, A.M. et al. Infra-Red and Visible Photoluminescence in Inl_xGaxP. PHYS. STATUS SOLIDI, v. 30, no. 2, Dec. 1968. p. K125 - K126.CrossRefGoogle Scholar
  35. WILLIAMS, E.W. et al. Evidence for a Pair Band Associated with Zinc in (In,Ga)P. SOLID STATE COMMUNICATIONS, v. 8, no. 7, Apr. 1970. p. 501–503.CrossRefGoogle Scholar
  36. WILLIAMS, E.W. et al. (In,Ga)P Alloys: Photoluminescence Excitation and Cathodoluminescence of Zinc Doped Indirect Gap Alloys. J. OF PHYS., C, v. 3, no. 2, Feb. 1970. p. L55 - L57.Google Scholar
  37. ZALLEN, R. and W. PAUL. Band Structure of Gallium Phosphide from Optical Experiments at High Pressures. PHYS. REV., v$1134, no. 6A, June 1964. p. A1628 - A1641.Google Scholar
  38. NUESE, C.J. et al. Orange Laser Emission and Bright Electroluminescence from In1-xGaxP Vapor-Grown p-n Junctions. APPLIED PHYS. LETTERS, v. 20, no. 11, June 1972. p. 431–434.CrossRefGoogle Scholar
  39. OKUNO, Y. et al. Bright Yellow Luminescence from In1-xGaxP p-n Junctions. JAPAN. J. OF APPL. PHYSICS, v. 11, no. 5, May 1972. p. 757.Google Scholar

Copyright information

© IFI/Plenum Data Corporation 1972

Authors and Affiliations

  • M. Neuberger
    • 1
  1. 1.Electronic Properties Information CenterHughes Aircraft CompanyCulver CityUSA

Personalised recommendations