Gallium-Arsenic-Antimony System

  • M. Neuberger


Gallium Arsenide Epitaxial Film Indium Phosphide Indium Antimonide Gallium Phosphide 
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Gallium-Arsenic-Antimony Bibliography

  1. ANTYPAS, G.A. and L.W. JAMES. Liquid Epitaxial Growth of Gallium Arsenic Antimonide and Its Use as a High-Efficiency, Long-Wavelength Threshold Photoemitter. J. OF APPLIED PHYS., v. 41, no. 5, Apr. 1970. p. 2165–2171.CrossRefGoogle Scholar
  2. ANTYPAS, G.A. et al. Operation of III-V Semiconductor Photocathodes in the Semitransparent Mode. J. OF APPLIED PHYS., v. 41, no. 7, June 1970. p. 2888–2894.CrossRefGoogle Scholar
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  4. CARDONA, M. Fundamental Reflectivity Spectrum of Semiconductors with Zincblende Structure. J. OF APPLIED PHYS., Suppl. to v. 32, no. 10, Oct. 1961. p. 2151–2155.CrossRefGoogle Scholar
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  6. CLOUGH, R.B. and J.J. TIETJEN. Vapor-Phase Growth of Epitaxial Gallium Arsenic Antimonide Using Arsine and Stibine. AIME METALL. SOC., TRANS., v. 245, no. 3, Mar. 1969. p. 583–585.Google Scholar
  7. FOSTER, L.M. and J.F. WOODS. Thermodynamic Analysis of the III-V Alloy Semiconductor Phase Diagrams. ELECTROCHEM. SOC., J., v. 119, no. 4, Apr. 1972. p. 504–507.CrossRefGoogle Scholar
  8. KOZLOV, Yu.M. et al. Epitaxial Films of Gallium Antimonide-Gallium Arsenide Solid Solutions and Some of their Electrical and Optical Properties. SOVIET PHYS. SEMICONDUCTORS, v. 4, no. 9, Mar. 1971. p. 1571–1572.Google Scholar
  9. LE GUILLOU, G. and H.J. ALBANY. Contributions by Longitudinal and Transverse Phonons to the Lattice Thermal Conductivity in Gallium Antimonide at Low Temperatures (In Fr.). J. DE PHYSIQUE., v. 31, no. 5/6, May/June 1970.Google Scholar
  10. LUCOVSKY, G. and M.F. CHEN. Long Wave Optical Phonons in the Alloy Systems: Gallium Indium Arsenide, Gllium Arsenic Antimonide and Indium Arsenic Antimonide. SOLID STATE COMM., v. 8, no. 37, Sept. 1970. p. 1397–1401.CrossRefGoogle Scholar
  11. McSKIMIN, H.J. et al. Elastic Moduli of Gallium Antimonide Under Pressure and the Evaluation of Compression to 80 kbar. J. OF APPLIED PHYS., v. 39, no. 9, Aug. 1968. p. 4127–4128.CrossRefGoogle Scholar
  12. POTTER, R.F. and D.L. STIERWALT. Reststrahlen Frequencies for Mixed Gallium Arsenic Antimonide System. PHYS. OF SEMICONDUCTORS, PROC. OF THE 7th INTERNATIONAL CONF., ACAD. PRESS, N.Y. AND LONDON; PARIS 1964. p. 1111–1114.Google Scholar
  13. REDIKER, R.H. et al. Electrical and Electro-Optical Properties of Interface-Alloy Heterojunctions. AIME METALL. SOC. TRANS., v. 223, no. 3, 1965. p. 463–467.Google Scholar
  14. RICHMAN, D. Dissociation Pressures of Gallium Arsenide, Gallium Phosphide and Indium Phosphide and the Nature of III-V Melts. J. OF PHYS. AND CHEM. OF SOLIDS, v. 24, no. 9, Sept. 1963. p. 1131–1139.CrossRefGoogle Scholar
  15. SAHM, P.R. and T.V. PRUSS. Pressure-Sintered Gallium Antimonide-Gallium Arsenide Alloys-Densification and Thermoelectric Properties. AIME METALL. SOC., TRANS., v. 239, no. 10, Oct. 1967. p. 1523–1526.Google Scholar
  16. SHAKLEE, K.L. et al. Electroreflectance and Spin-Orbit Splitting in III-V Semiconductors. PHYS. REV. LETTERS, v. 16, no. 2, Jan. 1966. p. 48–50.CrossRefGoogle Scholar
  17. SIROTA, N.N. and E.E. MATYAS. Reflection and Absorption Spectra of Gallium Arsenic Antimonide Solid Solutions. PHYS. STATUS SOLIDI, v. 4, no. 2, Feb. 1971. p. 143–146.CrossRefGoogle Scholar
  18. STRAUMANIS, M.E. and C.D. KIM. Solid Solubility in the System Gallium Antimonide-Gallium Arsenide. ELECTROCHEM. SOC., J., v. 112, no. 1, Jan. 1965. p. 112–113.CrossRefGoogle Scholar
  19. TAYLOR, A.E. and E. FORTIN. Photoconductivity in Some III-V Alloys. CANADIAN J. OF PHYS., v. 48, no. 16, Aug. 1970. p. 1874–1878.CrossRefGoogle Scholar
  20. THOMAS, M.B. et al. Energy Gap Variation in Gallium Arsenic Antimonide Alloys. PHYS. STATUS SOLIDI, v. 2, no. 3, July 1970. p. 141–143.CrossRefGoogle Scholar
  21. WILLIAMS, E.W. and V. KEHM. Electroreflectance Studies of Indium Arsenide, Gallium Arsenide and Gallium Indium Arsenide Alloys. PHYS. REV., v. 172, no. 3, Aug. 1968. p. 798–810.CrossRefGoogle Scholar
  22. WOOLLEY, J.C. Solid Solution of III-V Compounds. In: COMPOUND SEMICONDUCTORS; Preparation of III-V Compounds, v. 1, p. 3–20. Edited by: WILLARDSON, R.K. and H.L. GOERING, Reinhold Pub. Corp., N.Y. Chapman and Hall, Ltd., London.Google Scholar
  23. ZALLEN, R. and W. PAUL. Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related Semiconductors. PHYS. REV., v. 155, no. 3, Mar. 1967. p. 703–711.CrossRefGoogle Scholar
  24. ZVARA, M. Faraday Rotation and Faraday Ellipticity in the Exciton Absorption Region of Gallium Arsenide. PHYSICA STATUS SOLIDI, v. 36, no. 2, Dec. 1969. p. 785–792.CrossRefGoogle Scholar

Copyright information

© IFI/Plenum Data Corporation 1972

Authors and Affiliations

  • M. Neuberger
    • 1
  1. 1.Electronic Properties Information CenterHughes Aircraft CompanyCulver CityUSA

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