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Indium-Arsenic-Phosphorus System

  • M. Neuberger

Keywords

Injection Laser Indium Phosphide Property Symbol Soviet Phys Indium Antimonide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Indium-Arsenic-Phosphorus Bibliography

  1. ALEXANDER, F.B. et al. Spontaneous and Stimulated Infra-Red Emission from Indium Phosphide Arsenide Diodes. APPLIED PHYS. LETTERS, v. 4, no. 1, Jan. 1, 1964. p. 13–15.Google Scholar
  2. ALLEN, H.A. and E.W. MEHAL. Deposition of Epitaxial InAsxP1-x on GaAs and GaP Substrates. ELECTROCHEM. SOC., J., v. 117, no. 8, Aug. 1970. p. 1081–1082.Google Scholar
  3. ANTYPAS, G.A. and T.O. YEP. Growth and Characterization of Liquid-Phase Epitaxial InAslxPx. J. OF APPLIED PHYS., v. 42, no. 8, July 1971. p. 3201–3204.CrossRefGoogle Scholar
  4. BASOV, N.G. et al. Properties of Injection Lasers at 0.8–1.1 u. SOVIET PHYS. TECH. PHYS., v. 12, no. 2, Aug. 1967. p. 250–257.Google Scholar
  5. BELL, R.L. et al. Interfacial Barrier Effects in III-V Photoemitters. APPLIED PHYS. LETTERS, v. 19, no. 12, Dec. 15, 1971. p. 513–515.Google Scholar
  6. BOWERS, R. et al. InAsl-xPx as a Thermoelectric Material. J. OF APPLIED PHYS., v. 30, no. 7, July 1959. p. 1050–1054.CrossRefGoogle Scholar
  7. BRAUNERSREUTHER, E. et al. Hall Constant and Electron Mobility of InSb, InAs, and In (Asp 8P0 2) in Magnetic Fields (In Ger.). ZEIT. FUER NATURFORSCH., v. 15a, no. 9, Sept. 1960. p. 795–799.Google Scholar
  8. BUSCH, G.A. and R. KERN. The Magnetic Properties of the III-V Compounds (In Ger.). HELVETICA PHYSICA ACTA, v. 32, no. 1, Mar. 10, 1959. p. 24–57.Google Scholar
  9. CARDONA, M. et al. Electroreflectance at a Semiconductor-Electrolyte Interface. PHYS. REV., v. 154, no. 3, Feb. 1967. p. 696–720.Google Scholar
  10. DUBROVSKII, G.B. Dependence of the Forbidden Energy Gap Width of the Compound InPXAsl_x on Composition. SOVIET PHYS. SOLID STATE, v. 5, no. 3, Sept. 1963. p. 699–700.Google Scholar
  11. EGOROV, L.A. and O.D. TORBOVA. Crystallization of the Indium Arsenic Phosphide Solid Solution from the Gas Phase (In Russ.). AKAD. NAUK SSSR. IZV. NEORGAN. MAT., v. 5, no. 1, 1969. p. 173–174.Google Scholar
  12. EHRENREICH, H. Electron Mobility of Indium Arsenic Phosphide. J. OF PHYS. AND CHEM. OF SOLIDS, v. 12, no. 1, 1959. p. 97–104.CrossRefGoogle Scholar
  13. ELISEEV, P.G. et al. Coherent Radiation from p-n Junctions in Indium Arsenide-Phosphide. SOVIET PHYS. SOLID STATE, v. 8, no. 4, Oct. 1966. p. 1025–1026.Google Scholar
  14. FOLBERTH, O.G. Mixed Crystal Formation in AIIIBV Compounds (In Ger.). ZEIT. FUER NATURFORSCH., v, 10a, 1955. p. 502–503.Google Scholar
  15. GIESECKE, G. and H. PFISTER. Precision Determination of the Lattice Constants of III-V Compounds. ACTA CRYSTALLOGRAPHICA, v. 11, 1958. p. 369–371.Google Scholar
  16. IRZIKEVICIUS, A. et al. Electroreflectance Studies of r15r1 Transitions in InAs1_xPx Alloys. PHYS. STATUS SOLIDI B, v. 49, 1972. p. K87–K89.Google Scholar
  17. JAMES, L.W. et al. Optimization of the InAsxPl-x-Cs2O Photocathodes. J. OF APPLIED PHYS., v. 42, no. 2, Feb. 1971. p. 580–586.CrossRefGoogle Scholar
  18. KAVALIAUSKAS, J. and A. SILEIKA. Electroreflectance Studies of A3~A1 Transitions in InAsl_xPx Alloys. PHYS. STATUS SOLIDI, v. 38, no. 1, Mar. 1970. p. K73–K76.Google Scholar
  19. KROITORU, S.G. et al. Energy Structure of Several Solid State Materials on a Basis of Combinations of Groups III-V (In Russ.). AKAD. NAUK SSSR. IZV. NEORGAN. MAT., v. 2, no. 5, 1966. p. 805–809.Google Scholar
  20. MAKHALOV, Yu.A. and R.L. MELIK-DAVTYAN. Measurement of Effective Mass of Conduction Electrons in Solid Solutions of the InAs-InP System by the Faraday Effect. SOVIET PHYS. SOLID STATE, v. 11, no. 9, Mar. 1970. p. 2155–2157.Google Scholar
  21. OSWALD, F. Optical Investigations of the Semiconducting Mixed-Crystal Series In(As P) (In Ger.). ZEITSCHRIFT FUER NATURFORSCH., v. 14a, no. 4, Apr. 1959. p. 374–379.Google Scholar
  22. [A]
    [A] PIDGEON, C.R. et al. Electroreflectance Study of Interband Magneto-Optical Transitions in Indium Arsenide and Indium Antimonide at 1.5°K. SOLID STATE COMM., v. 5, no. 8, Aug. 1967. p. 677–680.Google Scholar
  23. [B]
    [B] PIDGEON, C.R. et al. Interband Magnetoabsorption in Indium Arsenide and Indium Antimonide. PHYS. REV., v. 154, no. 3, Feb. 1967. p. 737–742.Google Scholar
  24. ROSS, B. and E. SNITZER. Optical Amplification of 1.06-u InAsi_xPx Injection-Laser Emission. IEEE J. OF QUANTUM ELECTRONICS, v. QE-6, no. 6, June 1970. p. 361–366.Google Scholar
  25. SHAKLEE, K.L. et al. Electroreflectance and Spin-Orbit Splitting in III-V Semiconductors. PHYS. REV. LETTERS, v. 16, no. 3, Jan. 1966. p. 48–50.Google Scholar
  26. [A]
    SONNENBERG, H. InAsP-Cs 0, A High-Efficiency Infrared-Photocathode. APPLIED PHYS. LETTERS, v. 16, no. 6, Mar. 15, 1970. p. 245–246.Google Scholar
  27. [B]
    ONNENBERG, H. Long-Wavelength Photoemission from InAs1_ Px APPLIED PHYS. LETTERS, v. 19, no. 10, Nov. 15, 1971. p. 431–433.Google Scholar
  28. THOMPSON, A.G. et al. Preparation and Optical Properties of InAsixPx Alloys. J. OF APPLIED PHYS., v. 40, no. 8, July 1969. p. 3280–3288.Google Scholar
  29. UGAII, Ya.A. et al. Equilibrium Vapour Pressure Over Fused Solid Solutions of Indium Phosphide and Arsenide (In Russ.). AKAD. NAUK SSSR. IZV. NEORGAN. MAT., v. 3, no. 9, 1967. p. 1555–1560.Google Scholar
  30. VAN DEN BOOMGAARD, J. and K. SCHOL. The P-T-x Phase Diagram of the Indium-Arsenic, Gallium-Arsenic and Indium-Phosphorus Systems. PHILIPS RES. REPTS., v. 12, no. 1, Apr. 1957. p. 127–140.Google Scholar
  31. VISHNUBHATLA, S.S. et al. Electroreflectance Measurements in Mixed III-V Alloys. CANADIAN J. OF PHYS., v. 47, no. 16, Aug. 1969. p. 1661–1670.Google Scholar
  32. WEISS, H. Thermoelectric Power and Heat Conduction of III-V Compounds and Their Mixed Crystals (In Ger.). ANNALEN DER PHYSIK, v. 4, no. 1–5, 1959. p. 121–131.Google Scholar
  33. [A]
    BELL AND HOWELL RES. LABS., PASADENA, CALIF. Indium Arsenide-Phosphide Injection Lasers. By: WILLARDSON, R.K. et al. Contract N00014–68-C-0219. Nov. 1968. 118 p. AD 679 908.Google Scholar
  34. [B]
    BELL AND HOWELL RES. LABS., PASADENA, CALIF. Semiconductor Materials for Electroluminescence Diodes and Lasers. Tech. Summary Rept. By: WILLARDSON, R.K. et al. Contract no. N123 (62738)55582A. May 1968. AD 709 970.Google Scholar

Copyright information

© IFI/Plenum Data Corporation 1972

Authors and Affiliations

  • M. Neuberger
    • 1
  1. 1.Electronic Properties Information CenterHughes Aircraft CompanyCulver CityUSA

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