Indium-Arsenic-Antimony System

  • M. Neuberger


Faraday Rotation Ternary Phase Diagram Property Symbol Indium Antimonide Indium Arsenide 
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Indium-Arsenic-Antimony Bibliography

  1. ADACHI, E. Energy Band Parameters of Indium Arsenide at Various Temperatures. PHYS. SOC. OF JAPAN, J., v. 24, no. 5, May 1968. p. 1178.CrossRefGoogle Scholar
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  7. CARDONA, M. et al. Electroreflectance at a Semiconductor-Electrolyte Interface. PHYS. REV., v. 154, no. 3, Feb. 1967. p. 696–720.CrossRefGoogle Scholar
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  9. CODERRE, W.M. and J.C. WOOLLEY. Conduction Bands of GaxIn1−xAs and InAsxSb1−x Alloys. CANADIAN J. OF PHYS., v. 48, no. 4, Feb. 1970. p. 463–469. (B)CrossRefGoogle Scholar
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  13. LUKES, F. and E. SCHMIDT. The Fine Structure and the Temperature Dependence of the Reflectivity and Optical Constants of Germanium, Silicon and III-V Compounds. INTERNAT. CONF. ON THE PHYSICS OF SEMICONDUCTORS, PROC., Exeter, July 1962. Edited by: A.C. STICKLAND, London, Inst. of Phys. and the Phys. Soc. p. 389–394.Google Scholar
  14. PIDGEON, C.R. and R.N. BROWN. Interband Magneto-Absorption and Faraday Rotation in Indium Antimonide. PHYS. REV., v. 146, no. 2, June 1966. p. 575–583.Google Scholar
  15. POTTER, R.F. Optical Properties of Multisource Thermally Evaporated III-V Semiconductor Compounds. APPLIED OPTICS, vo. 5, no. 1, Jan. 1966. p. 35–40.Google Scholar
  16. POTTER, R.F. and G.G. KRETSCHMAR. Optical Properties of InAsySb1−y Layers Prepared by Thermal Evaporation. INFRARED PHYS., v. 4, no. 1, Mar. 1964. p. 57–65.CrossRefGoogle Scholar
  17. SHIN, C. and E.A. PERETTI. The Phase Diagram of the System InAs-Sb. AMERICAN SOC. FOR METALS, TRANS., v. 46, 1954. p. 389–396.Google Scholar
  18. STEININGER, J. Thermodynamics and Calculation of the Liquidus-Solidus Gap in Homogeneous, Monotonic Alloy Systems. J. OF APPLIED PHYS., v. 41, no. 6, May 1970. p. 2713–2724.CrossRefGoogle Scholar
  19. STRINGFELLOW, G.B. Calculation of Ternary Phase Diagrams of III-V Systems. J. OF PHYS. AND CHEM. OF SOLIDS, v. 33, no. 3, Mar. 1972. p. 665–677.CrossRefGoogle Scholar
  20. STRINGFELLOW, G.B. and P.E. GREENE. Calculation of III-V Ternary Phase Diagrams: In-Ga-As and In-As-Sb. J. OF PHYS. AND CHEM. OF SOLIDS, v. 30, no. 7, July 1969. p. 1779–1791.CrossRefGoogle Scholar
  21. THOMAS, M.B. and J.C. WOOLLEY. Plasma Edge Reflectance Measurements in GaxIn(1−x)As and InAsxSb(1−x) Alloys. CANADIAN J. OF PHYS., v. 49, no. 5, Aug. 1971. p. 2052–2060.Google Scholar
  22. VAN DEN BOOMGAARD, J. and K. SCHOL. The P-T-x Phase Diagrams of the Indium-Arsenic, Gallium-Arsenic and Indium-Phosphorus Systems. PHILIPS RES. REPTS., v. 12, no. 1, Apr. 1957. p. 127–140.Google Scholar
  23. VAN TONGERLOO, E.H. and J.C. WOOLLEY. Free-Carrier Faraday Rotation in InAsxSb1−xAlloys. CANADIAN J. OF PHYS., v. 46, no. 10, Pt. 1, May 15, 1968. p. 1199–1206.Google Scholar
  24. VISHNUBHATLA, S.S. et al. Electroreflectance Measurements in Mixed III-V Alloys. CANADIAN J. OF PHYS., v. 47, no. 16, Aug. 1969. p. 1661–1670.Google Scholar
  25. WOOLLEY, J.C. and B.A. SMITH. Solid Solution in III-V Compounds. PHYS. SOC., PROC., v. 72, 1958. p. 214–223.Google Scholar
  26. WOOLLEY, J.C. and J. WARNER. Preparation of InAs-InSb Alloys. ELECTROCHEM. SOC., J., v. 111, no. 10, Oct. 1964. p. 1142–1145. (A)Google Scholar
  27. WOOLLEY, J.C. and J. WARNER. Optical Energy-Gap Variation in AnAs-InSb Alloys. CANADIAN J. OF PHYS., v. 42, no. 10, Oct. 1964. p. 1879–1885. (8)CrossRefGoogle Scholar
  28. ZWERDLING, S. et al. Oscillatory Magnetoabsorption in Semiconductors. PHYS. REV., v. 108, no. 6, Dec. 1967.Google Scholar

Copyright information

© IFI/Plenum Data Corporation 1972

Authors and Affiliations

  • M. Neuberger
    • 1
  1. 1.Electronic Properties Information CenterHughes Aircraft CompanyCulver CityUSA

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