Silicon Nitride-Silicon Dioxide Combinations

  • John T. Milek


While it would be desirable to replace completely SiO2 by Si3N4, such structures exhibit hysteresis in surface behavior and charge instability due to the high number of surface charges, tunneling and trapping at the Si-Si3N4 interface as noted in the previous sections of this survey. Two major approaches have been taken to solve these problems: (1) mixed oxy-nitride system, (2) nitride-oxide layer composite structure. Each approach will be discussed separately and has been investigated by numerous investigators.


Silicon Nitride Thermal Oxide Etch Rate Breakdown Voltage Composite Layer 
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Copyright information

© IFI/Plenum Data Corporation, a Subsidiary of Plenum Publishing Corporation 1971

Authors and Affiliations

  • John T. Milek
    • 1
  1. 1.Electronic Properties Information CenterHughes Aircraft CompanyCulver CityUSA

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