Abstract
The Electronic Properties Information Center, with its world-wide literature coverage of all materials having a potential application in the field of electronic technology, was utilized for this survey. The availability of the Center’s computer storage and retrieval system eliminated the need to conduct a formal literature search. Over 134 references were reviewed for this survey. The Center has previously prepared interim reports dealing with bulk silicon nitride (1) and thin film silicon nitride capacitors (2).
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Introduction-References
NEUBERGER, M.S. Collected Data and Bibliography on Silicon Nitride. HUGHES AIRCRAFT COMPANY, Electronic Properties Information Center, Culver City, Calif. IR-19, Feb. 1966. 41 p.
MILEK, J.T. Thin Film Dielectrics for Microelectronics, IR-63, July 3, 1968. 31 p.
BARNES, C. R. and C.R. GEESNER. Silicon Nitride Thin Film Dielectric. ELECTROCHEM. SOC., J., v. 107, no. 2, Feb. 1960. p. 98–100.
FELDMAN, C. and M. HACSKAYLO. Temperature Characteristics of Vacuum Deposited Dielectric Films. REV. OF SCIENTIFIC INSTRUMENTS, v. 33, Dec. 1962. p. 1459–1460.
STERLING, H.F. and R.C.G. SWANN. Chemical Vapour Deposition Promoted by r.f. Discharge. SOLID STATE ELECTRONICS, v. 8, no. 8, Aug. 1965. p. 653–654.
TOMBS, N.C. et al. A New Insulated-Gate Silicon Transistor. PROC. OF IEEE (Letters), v. 54, Jan. 1966. p. 87–89.
NEWMAN, R. et al. Silicon Nitride for Microelectronics. SPERRY ENGINEERING REVIEW, v. 19, no. 2, 1966. p. 2–9.
HU, S.M. Properties of Amorphous Silicon Nitride Films. ELECTROCHEM. SOC., J., v. 113, no. 7, July 1966. p. 693–698.
Doo, V.Y. Silicon Nitride, a New Diffusion Mask. IEEE TRANS. ON ELECTRON DEVICES, v. 13, 1966. p. 501–503.
ELECTROCHEMICAL SOCIETY, Symposium on Silicon Nitride, Philadelphia, Penn. Oct. 1966.
YEARGAN, J.R. and H.L. TAYLOR. Deposition of Silicon Nitride on Metal-Coated Substrates. 1967 SWIEECO Record, v. 19, pp. 16–4–1 to 16–4–8.
FEIST, W.M. et al. The Preparation of Films by Chemical Vapor Deposition. In: PHYSICS OF THIN FILMS, Edited by G. Hass and R.E. Thun, Academic Press, New York, 1969, pp. 237–322.
POPPER, P. and S.N. RUDDLESDEN. The Preparation, Properties and Structure of Silicon Nitride. BRITISH CERAMIC SOCIETY, TRANS., v. 60, Sept. 1961. p. 603–624.
PARR, N.L. Silicon Nitride-A New Ceramic for High Temperature Engineering and Other Applications. RESEARCH APPLIED IN INDUSTRY, v. 13, 1960. p. 261–269.
WELLS, W.M. Silicon Nitride as a High-Temperature Radome Material. University of California, Lawrence Radiation Laboratory, Livermore, Calif. Contract No. W.7405-eng-48, UCRL-7795. May 19, 1964. 19 p.
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© 1971 IFI/Plenum Data Corporation, a Subsidiary of Plenum Publishing Corporation
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Milek, J.T. (1971). Introduction. In: Silicon Nitride for Microelectronic Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-6162-6_1
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DOI: https://doi.org/10.1007/978-1-4684-6162-6_1
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