Silicon Junction Field-Effect Transistors in Low-Noise Circuits: Research in Progress and Perspectives

  • P. F. Manfredi
  • V. Speziali
Part of the NATO ASI Series book series (NSSB, volume 275)


The interest for Silicon junction field-effect transistors as front-end devices in preamplifiers for radiation detectors is very well alive by virtue of their very good noise characteristics and of their small noise-sensitivity to the absorbed radiation. This paper discusses some recent achievements in the area of preamplifiers based on Si JFETs.


Drain Current Gate Width Monolithic Integration Noise Behaviour MICROSTRIP Detector 
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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • P. F. Manfredi
    • 1
    • 3
  • V. Speziali
    • 2
  1. 1.Dipartimento di ElettronicaUniversità di PaviaPaviaItaly
  2. 2.Istituto Nazionale di Fisica NucleareMilanoItaly
  3. 3.Instrumentation DivisionBrookhaven National LaboratoryUptonUSA

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