Silicon Junction Field-Effect Transistors in Low-Noise Circuits: Research in Progress and Perspectives
The interest for Silicon junction field-effect transistors as front-end devices in preamplifiers for radiation detectors is very well alive by virtue of their very good noise characteristics and of their small noise-sensitivity to the absorbed radiation. This paper discusses some recent achievements in the area of preamplifiers based on Si JFETs.
KeywordsDrain Current Gate Width Monolithic Integration Noise Behaviour MICROSTRIP Detector
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