Advertisement

Radiation Response of Diamond Films

  • N. K. Annamalai
  • Reginald F. Blanchard
  • Joseph Chapski
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

Diamond is expected to be a radiation hardened material due to its tight bonding. In this work, we are reporting the total dose response of CVD diamond films, 2 μm thick, grown on 3″ p-type silicon wafers, in terms of electrical parameters such as conductivity and high frequency capacitance. It is proposed that diamond be used as a buried insulating layer in a silicon-on-insulator (SOI) technology.

Keywords

Diamond Film Capacitive Current Threshold Voltage Shift Total Leakage High Frequency Capacitance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Jean-Pierre Colinge, “Thin-Film SOI Technology: The Solution to Many Submicron CMOS Problems”, IEDM Technical Digest, pp. 817–820 (1989).Google Scholar
  2. [2]
    K.V. Ravi and M.I. Landstrass, “Silicon-on-Insulator Technology Using CVD Diamond Films”, Proceedings of the First International Symposium on Diamond and Diamond-Like Films, The Electrochemical Society, (1989).Google Scholar
  3. [3]
    M.I. Landstrass and D.M. Fleetwood, “Total Dose Radiation Hardness of Diamond-Based Silicon-on-Insulator Structures”, Applied Physics Letters, Vol$156, No. 23., pp. 2316–2318 (1990).Google Scholar
  4. [4]
    E. H. Nicollian and J. R. Brews, MOS Physics and Technology ( John Wiley & Sons, New York, 1982 ), pp. 435–440.Google Scholar
  5. [5]
    N. K. Annamalai and J. Chapski, “SOI Buried Oxide Leakage Currents,” Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices, The Electrochemical Society, Vol. 90–6, pp. 337–350 (1990).Google Scholar
  6. [6]
    A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions ( Academic Press, New York, 1972 ), Chapter 2.Google Scholar
  7. [7]
    Robert F. Pierret, Modular Series on Solid State Devices, Volume IV, Field Effect Devices ( Addison-Wesley, Reading, Mass., 1983 ), p. 54.Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • N. K. Annamalai
    • 1
  • Reginald F. Blanchard
    • 1
  • Joseph Chapski
    • 1
  1. 1.Solid State Sciences DirectorateRome Air Development CenterUSA

Personalised recommendations