Boronated Diamond Films Deposited by Radio Frequency Plasmas

  • T. B. Kustka
  • R. O. Dillon
  • T. Furtak
Part of the NATO ASI Series book series (NSSB, volume 266)


P-type doping of diamond films is required to fabricate electronic devices. Several doping techniques have been used. Firstly, solid boron has been placed next to the substrate in microwave assisted chemical vapor deposition (CVD)1–7. Secondly, diborane gas has been used in reactant gases as a dopant. Thirdly, Okano et alb have dissolved boron oxide in methanol to produce a doping gas. Since the chemical reaction in this third method produces trimethyl borate (TMB), (CH3O)3B, we decided in this work to investigate the use of TMB directly as a dopant. This is important since TMB is much less toxic than diborane.


Diamond Film Boron Concentration Mott Transition Impurity Band Chemical Vapor Deposition Diamond 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    M.W. Geis, D.D. Rathman, J.J. Zayhowski, D. Smythe, D.K. Smith, and G.A. Ditmer, in “Diamond and Diamond-Like Materials Synthesis”, G.H. Johnson, A.R. Badzian, and M.W. Geis, eds., ( Materials Research Society, 1988 ), p. 115Google Scholar
  2. 2.
    K.V. Ravi and M.L. Landstrass, Presented at “High Frequency Power Conversion 89”, Naples, Florida, May, 1989, p. 1Google Scholar
  3. 3.
    M. Kamo, H. Yurimoto, Y. Sato, and N. Setaka, J. Vac. Sci. Technol. A 6 (3), 1818 (1988)Google Scholar
  4. 4.
    G.S. Gildenblat, S.A. Grot,C.W. Hatfield, C.R. Wronski, A.R. Badzian, T. Badzian, and R. Messier, Mat. Res. Bull., 25, 129 (1990)CrossRefGoogle Scholar
  5. 5.
    A.W. Phelps and R. Koba, in “Proceedings of the First International Symposium on Diamond and Diamond-Like Films”, J.P. Dismukes, A.J. Purdes, K.E. Spear, B.S. Meyerson, K.V. Ravi, T.D. Moustakas, M. Yoder, eds., 89(12) (Electrochemical Society, 1989 ) p. 38Google Scholar
  6. 6.
    K. Nishimura, K. Das, J. Glass, K. Kumagai, K. Miyata, K. Kobashi, and Y. Kawate, in SDIO/IST-ONR Diamond Technology Initiative Symposium Book of Abstracts, p.TH2, July, (1989)Google Scholar
  7. 7.
    J. Mort, D. Kuhman, M. Machonkin M. Morgan, F. Jansen, K. Okumura, Y.M. LeGrice, and R.J. Nemanich, Appl. Phys. Lett. 55 (11), 1121 (1989)ADSCrossRefGoogle Scholar
  8. 8.
    K. Okano, H. Naruki, Y. Akiba, T. Kurosu, M. Iida, and Y. Hirose, Jap. J. Appl. Phys. 27 (2), L173 (1988)ADSCrossRefGoogle Scholar
  9. 9.
    D.E. Meyer, R.O. Dillon, and J.A. Woollam, J. Vac. Sci. Technol. A 72 (3), 2325 (1989)ADSGoogle Scholar
  10. 10.
    D.E. Meyer, R.O. Dillon, and J.A. Woollam, Proceedings of the First International Symposium on Diamond and Diamond-Like Films, Electrochemical Society, 494 (1989)Google Scholar
  11. 11.
    J. Bernholc, A. Antonelli, T.M. DelSole, Y. Bar-Yam, and S.T. Pantelides, Phys. Rev. Lett. 61 (23), 2689 (1988)ADSCrossRefGoogle Scholar
  12. 12.
    R.E. Shroder, R.J. Nemanich, and J.T. Glass, SPIE Diamond optics, Vol. 969 (1988) p. 79Google Scholar
  13. 13.
    J. C. Bourgion, J. Krynicki, and B. Blanchard, Phys. Stat. Sol.(a), 52, 293, (1979)ADSCrossRefGoogle Scholar
  14. 14.
    G.S. Snadhu, W.K. Chu, M.L. Swanson, and J.F. Prins, SPIE Diamond Optics, 969, 37, (1988)Google Scholar
  15. 15.
    C. J. Rauch, in “Proc of Int. Conf. on the Physics of Semiconductors”, A. C. Strichland ed, The Inst. of Phys. and the Physical Soc., London, 276–80 (1962)Google Scholar
  16. 16.
    A. T. Collins, and E. C. Lightowlers in “The Properties of Diamond”, edited by J. E. Field, Academic Press, 82, (1979)Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • T. B. Kustka
    • 1
  • R. O. Dillon
    • 1
  • T. Furtak
    • 1
  1. 1.Electrical Engineering Department and Center of Microelectronic and Optical Materials ResearchUniversity of NebraskaLincolnUSA

Personalised recommendations