Boronated Diamond Films Deposited by Radio Frequency Plasmas
P-type doping of diamond films is required to fabricate electronic devices. Several doping techniques have been used. Firstly, solid boron has been placed next to the substrate in microwave assisted chemical vapor deposition (CVD)1–7. Secondly, diborane gas has been used in reactant gases as a dopant. Thirdly, Okano et alb have dissolved boron oxide in methanol to produce a doping gas. Since the chemical reaction in this third method produces trimethyl borate (TMB), (CH3O)3B, we decided in this work to investigate the use of TMB directly as a dopant. This is important since TMB is much less toxic than diborane.
KeywordsDiamond Film Boron Concentration Mott Transition Impurity Band Chemical Vapor Deposition Diamond
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