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Static and Dynamic Electrical Conductivity of Polycrystalline Diamond Films

  • G. A. Sokolina
  • A. A. Botev
  • L. L. Bouilov
  • S. V. Bantsekov
  • O. I. Lazareva
  • A. F. Belyanin
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

At present, owing to the findings in the field of diamond synthesis from an activated gaseous phase, diamond polycrystalline films (DPF) can be obtained on foreign substrates on areas measured in square centimeters.1,2 The high growth rates of DPF make it possible to obtain films and free diamond plates with thicknesses of tens and hundreds of microns. The total combination of valuable physical-chemical properties of DPF makes them applicable as new perspective material for creating various electronic devices.3 This encourages the development and study;of electrophysical properties of synthesized diamond films.

Keywords

Diamond Film Current Carrier Diamond Polycrystalline Energy Band Structure Middle Temperature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    L. L. Bouilov, A. E. Alexenko, A. A. Botev, and B. V. Spitsyn, “Some laws of the growth of diamond layers from activated vapor phase,” Dokl. AN SSSR 287: 888 (1986).Google Scholar
  2. 2.
    A. Sawabe, H. Yasuda, T. Inuzuka, and K. Suzuki, “Growth of diamond thin films in a DC discharge plasma,” Apvl. Surf. Sci. 33 /34: 539 (1988).ADSCrossRefGoogle Scholar
  3. 3.
    B. V. Spitsyn, “Crystal growth under thermodynamically metastable conditions,” in Growth of Crystals, 13:58, E. I. Givargizov, ed., Plenum Publishing Corp., New York (1986).Google Scholar
  4. 4.
    John Y.W. Seto, “The electrical properties of polycrystalline silicon films,” J. Appl. Phys. 46–5247 (1975).Google Scholar
  5. 5.
    G. A. Sokolina, S. V. Banstekov, A. A. Botev, L. L. Bouilov, and B. V. Spitsyn, “Electrical conductivity of polycrystalline diamond films,” Izvestiva AN SSSR. Neorganicheskie materials 24: 1215 (1988).Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • G. A. Sokolina
    • 1
  • A. A. Botev
    • 1
  • L. L. Bouilov
    • 1
  • S. V. Bantsekov
    • 1
  • O. I. Lazareva
    • 1
  • A. F. Belyanin
    • 1
  1. 1.Institute of Physical Chemistry of the Academy of Sciences of the USSRMoscowUSSR

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