Some Properties of CVD-Diamond Semiconducting Structures

  • A. E. Alexenko
  • B. V. Spitsyn
Part of the NATO ASI Series book series (NSSB, volume 266)


Semiconducting diamond structures — models of solid state electronic devices — were made by means of chemical crystallization of diamond films from the gaseous phases1. Doping by boron and phosphorus during growth made it possible to obtain homoepitaxial diamond films of p-and n-type conductivity2. The simplest device of this type is a thermistor. There are diamond thermistors, made of synthetic crystals doped by boron, obtained by the method of superhigh pressures. Diamond thermistors appear to be a good starting device owing to their ability to operate over a wide temperature range, high thermal stability and low inertia due to high thermal conductivity.


Diamond Film Reverse Current Dielectric Film Asymmetry Coefficient Chemical Transport reactionS 
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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • A. E. Alexenko
    • 1
  • B. V. Spitsyn
    • 1
  1. 1.Institute of Physical Chemistry of the Academy of Sciences of the USSRMoscowUSSR

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