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Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process

  • K. L. Moazed
  • J. R. Zeidler
  • M. J. Taylor
  • C. A. Hewett
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

The recognized need for devices that can perform under severe operating conditions and recent advances in the growth of diamond films at moderate temperatures and low pressures has generated great interest in the exploitation of the many unique properties of diamond for solid state devices. Among these properties are high strength, high thermal conductivity, high band gap energy, high carrier mobility, and high resistance to degradation by exposure to radiation, heat, and corrosives[1,2].

Keywords

Ohmic Contact Auger Electron Spectroscopy Diamond Film Gold Wire Diamond Surface 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • K. L. Moazed
    • 1
  • J. R. Zeidler
    • 1
  • M. J. Taylor
    • 1
  • C. A. Hewett
    • 1
  1. 1.North Carolina State UniversityRaleighUSA

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