Semiconductor Device Development with Homoepitaxial Diamond Films
Diamond has many physical properties that make it an attractive semiconductor material for high-temperature and high power electronic devices1. Natural diamonds and synthetic bulk diamond fabricated by the traditional ultra high-pressure high-temperature method have been used to produce rudimentary active devices2,3. Schottky diodes and point contact transistors have operated at high temperatures3,4. However, the high cost of fabrication combined with the difficulty in controlling dopants for either natural or synthetic (high-pressure, high-temperature) diamond severely limit the applicability of these devices. Recently, several groups succeeded in fabricating the first semiconductor devices (Schottky diodes) based on p-type thin-film diamond deposited using an activated CVD process5–8. However, until now, the quality of the diamond films did not allow investigation of high-temperature device characteristics.
KeywordsOhmic Contact Schottky Diode Natural Diamond Diamond Surface Boron Doping
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