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Emission Spectroscopy of the Microwave Plasma Used for Diamond Depostion: Importance of the C3 Radical

  • A. Campargue
  • M. Chenevier
  • F. Stoeckel
  • B. Marcus
  • M. Mermoux
  • F. Vinet
  • S. Ljungström
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

Knowledge of intermediate species present in the plasma during chemical vapor deposition (CVD) of diamond is a necessary first step to the understanding of this complex process. Several hydrocarbons have been proposed as such key intermediate species for diamond deposition. Frenklach and Spear [1] suggested a growth mechanism from acetylene, C2H2, while other authors assumed that the methyl radical, CH3 plays the most important role [2–6]. A mechanism considering only the CHn radicals has been recently proposed by Chen [7].

Keywords

Methane Concentration Diamond Film Microwave Plasma Substrate Holder Diamond Deposition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • A. Campargue
    • 1
  • M. Chenevier
    • 1
  • F. Stoeckel
    • 1
  • B. Marcus
    • 2
  • M. Mermoux
    • 2
  • F. Vinet
    • 2
  • S. Ljungström
    • 3
  1. 1.Laboratoire de Spectrométrie PhysiqueUniversité Joseph-Fourier/Grenoble 1 (associé CNRS UA 08)Saint-Martin d’Hères CédexFrance
  2. 2.S2MC (associé CNRS UA 143)Saint-Martin d’Hères CédexFrance
  3. 3.Department of PhysicsChalmers University of TechnologyGöteborgSweden

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