Abstract
Knowledge of intermediate species present in the plasma during chemical vapor deposition (CVD) of diamond is a necessary first step to the understanding of this complex process. Several hydrocarbons have been proposed as such key intermediate species for diamond deposition. Frenklach and Spear [1] suggested a growth mechanism from acetylene, C2H2, while other authors assumed that the methyl radical, CH3 plays the most important role [2–6]. A mechanism considering only the CHn radicals has been recently proposed by Chen [7].
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© 1991 Plenum Press, New York
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Campargue, A. et al. (1991). Emission Spectroscopy of the Microwave Plasma Used for Diamond Depostion: Importance of the C3 Radical. In: Clausing, R.E., Horton, L.L., Angus, J.C., Koidl, P. (eds) Diamond and Diamond-like Films and Coatings. NATO ASI Series, vol 266. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5967-8_43
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DOI: https://doi.org/10.1007/978-1-4684-5967-8_43
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