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Studies on the Formation of Diamond Nucleation Sites on <100> Silicon Substrates

  • Joseph A. Baglio
  • Barry C. Farnsworth
  • Sandra Hankin
  • Changmo Sung
  • Jesse Hefter
  • Marvin Tabasky
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

A number of challenges present themselves in successfully growing diamond on non-diamond substrates. Among them are the formation of a high density of nucleation sites and the creation of appropriate nucleation sites for films of desired orientation and perfection. Abrasion techniques, used to increase nucleation densities, are not amenable to normal semiconductor processing sequences. The focus of this investigation is to evaluate techniques to increase the nucleation density while maintaining the perfection of diamond deposited on <100> oriented Si wafers.

Keywords

Nucleation Density Diamond Coating High Microwave Power Diamond Growth Diamond Nucleation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    H. Kawarada, K. Nishimura, K.S. Mar, Y. Yokota, J. Suzuki, T. Ito, A. Hiraki, “Diamond and Diamond-Like Materials Synthesis”, Extended Abstracts, Materials Research Society, April 5–9, 89–92 (1988).Google Scholar
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    J.A. Mucha, D.L. Flamm, D.E. Ibbotson, J. Apply. Phys., 65 (9), 3448–3452 (1989).ADSCrossRefGoogle Scholar
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    Y. Muranaka, H. Yamashita, K. Sato, H. Miyadera, J. Apply. Phys., 67 (10), 6247–6254 (1990).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • Joseph A. Baglio
    • 1
  • Barry C. Farnsworth
    • 1
  • Sandra Hankin
    • 1
  • Changmo Sung
    • 1
  • Jesse Hefter
    • 1
  • Marvin Tabasky
    • 1
  1. 1.GTE Laboratories IncorporatedWalthamUSA

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