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Electronic Structure of Diamond, Its Defects and Surfaces

  • J. Robertson
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

Diamond has the potential to become an important high temperature electronic material because it has the highest thermal conductivity, electron velocity and breakdown voltage of any semiconductorl. Additionally, the vapour phase deposition techniques offer the promise of thin film devices and controlled impurity contents2. However, a number of problems must first be resolved, such as an improved n-type doping facility and a further development of the vapour deposition process. To this end, the electronic structure of diamond, its vacancies, interstitials, substitutional impurities and surfaces is reviewed. It is noted that vacancies mediate atomic diffusion, that P is a shallow but low solubility donor and that hydrogen abstraction from the hydrogenated diamond surface is often the rate-limiting step in diamond deposition.

Keywords

Hydrogen Abstraction Migration Energy Dangling Bond Diamond Surface Bond Centre 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • J. Robertson
    • 1
  1. 1.National Power LabsSurreyUK

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