Characterization of the Composition, Electronic Structure and Hardness of Carbon Films Obtained by Ion Implantation, Laser Ablation, and Dual Ion Beam Sputtering
Diamond-like films were grown by C+ ion beam implantation at low energies (0.1 to 2.0 keV) on various substrates (Si, SiC, metals). The film properties were compared to those of films prepared either by dual ion beam sputtering (DIBS) of an a-C target and the substrate, magnetron sputtering or laser ablation.
KeywordsLaser Ablation Amorphous Semiconductor Tauc Plot Implantation Energy Nuclear Reaction Analysis
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- 2.A. P. Mashel, J. Mater. Res., 4(No. 5 ) (1989) 1358.Google Scholar
- J. C. Pivin, F. Pons, J. Bernas in “Materials Science by High Fluence Ion Beams,” ed. R. Kelly and M. F. da Silva, NATO ASI Series 155, 547; and other references in these texts.Google Scholar
- 4.SIMS profiles were recorded with the CAMECA IMS 3F microscope of ETCA, 16 bis Av. Prieur de la Cote d’Or, ARCUEIL, FRANCE. Ellipsometry data were obtained with one of the MOSS spectrometers of SOPRA, 68 Rue P. Joigneaux, BOIS COLOMBES, FRANCE.Google Scholar