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Characterization of the Composition, Electronic Structure and Hardness of Carbon Films Obtained by Ion Implantation, Laser Ablation, and Dual Ion Beam Sputtering

  • M. Allouard
  • J. C. Pivin
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

Diamond-like films were grown by C+ ion beam implantation at low energies (0.1 to 2.0 keV) on various substrates (Si, SiC, metals). The film properties were compared to those of films prepared either by dual ion beam sputtering (DIBS) of an a-C target and the substrate, magnetron sputtering or laser ablation.

Keywords

Laser Ablation Amorphous Semiconductor Tauc Plot Implantation Energy Nuclear Reaction Analysis 
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References

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    SIMS profiles were recorded with the CAMECA IMS 3F microscope of ETCA, 16 bis Av. Prieur de la Cote d’Or, ARCUEIL, FRANCE. Ellipsometry data were obtained with one of the MOSS spectrometers of SOPRA, 68 Rue P. Joigneaux, BOIS COLOMBES, FRANCE.Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • M. Allouard
    • 1
  • J. C. Pivin
    • 1
  1. 1.C.S.N.S.M.France

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