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RF Plasma Deposition of a-C:H Films: Diagnostics and Modeling

  • V. Barbarossa
  • O. Martini
  • S. Mercuri
  • R. Tomaciello
  • F. Galluzzi
Part of the NATO ASI Series book series (NSSB, volume 266)

Abstract

The low temperature deposition of amorphous carbon films from hydrocarbons plasmas has been the subject of several recent works 3 but the relationship between plasma processes and film growth is still not completely understood. As a contribution to this topic we report an experimental and theoretical study of plasma processes in the RF deposition of a-C:H films from methane/hydrogen gas mixtures. The plasma is characterized by both electrical probes and optical emission spectroscopy, obtaining electron density, electron mean energy, atomic hydrogen and CH radical concentrations. Deposition rates of carbon layers are measured as a function of feedstock gases composition. A simplified kinetic model of plasma bulk is also developed and calculated equilibrium distributions of chemical species are compared with experimental data.

Keywords

Deposition Rate Plasma Bulk Amorphous Carbon Film Amorphous Silicon Thin Film Stiff Ordinary Differential Equation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • V. Barbarossa
    • 1
  • O. Martini
    • 1
  • S. Mercuri
    • 1
  • R. Tomaciello
    • 1
  • F. Galluzzi
    • 1
  1. 1.Eniricerche S.p.A.Monterotondo (Rome)Italy

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