Abstract
Many optical and transport experiments on layered semiconductor structures involve the continuous energy spectrum. One important example are the quantum wells in a homogeneous electric field; the overall spectrum becomes continuous, bound states transform into resonances. Another example are the tunnelling structures (single barrier or double barrier). Very often the analysis of the continuous spectrum is performed in order to determine the dynamic characteristics of the structures, e.g. lifetimes of quasi-bound states1,2, high-frequency properties of tunneling diodes3,4 etc. Resonances are often treated with perturbative methods, i.e. the interaction between the discrete state and the continuum is assumed to be weak.
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W.Trzeciakowski and M.Gurioli: to be published
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© 1991 Plenum Press, New York
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Trzeciakowski, W., Gurioli, M. (1991). Study of the Continuous Spectrum of Semiconductor Heterostructures. In: Bishop, A.R., Pokrovsky, V.L., Tognetti, V. (eds) Microscopic Aspects of Nonlinearity in Condensed Matter. NATO ASI Series, vol 264. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5961-6_25
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DOI: https://doi.org/10.1007/978-1-4684-5961-6_25
Publisher Name: Springer, Boston, MA
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