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Temperature Measurement of Silicon Wafers Using Photoacoustic Techniques

  • Y. J. Lee
  • C. H. Chou
  • B. T. Khuri-Yakub
  • K. Saraswat
  • M. Moslehi
Chapter
Part of the Review of Progress in Quantitative Nondestructive Evaluation book series

Abstract

Semiconductor processing temperatures are currently measured using either pyrometers or thermocouples, both of which have significant limitations. Temperature measurements based on the temperature dependance of the Lamb wave velocities in silicon and longitudinal waves through the ambient directly above the wafer are explored.

Keywords

Acoustic Wave Silicon Wafer Probe Beam Lamb Wave Nitrogen Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media New York 1990

Authors and Affiliations

  • Y. J. Lee
    • 1
  • C. H. Chou
    • 1
  • B. T. Khuri-Yakub
    • 1
  • K. Saraswat
    • 2
  • M. Moslehi
    • 3
  1. 1.Edward L. Ginzton Laboratory Hansen Laboratories of PhysicsStanford UniversityStanfordUSA
  2. 2.Center for Integrated SystemsStanford UniversityUSA
  3. 3.Texas InstrumentsSemiconductor Process and Design CenterUSA

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