Abstract
The effective mass m* of Si:P is calculated for donor concentration N at which experimental data are available. Within the framework of Gutzwiller’s variational method for highy correlated system1, we have performed the calculation following a Brinkman-Rice-Berggren-Ferreira da Silva scheme1.Here we have applied a variational treatment which takes into account the many-valley effect of the silicon semiconductor 3. The m* obtained is written as
where U is the Hubbard correlation energy and Uo is the average energy without correlation2. The results are given in Table 1. The quantitative agreement between our calculation and experiment4 is certainly satisfactory.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
M. C. Gutzwiller, Phys. Rev. 137:A1726 (1965).
W. F. Brinkman and T. M. Rice, Phys. Rev. B2:4302 (1970); K.-F. Berggren, Phil. Mag. 30:1 (1970); A. Ferreira da Silva, Phys. Rev. B38: 10055 (1988).
A. Ferreira da Silva, Phys. Rev. Lett. 59:1263 (1987); Phys. Rev. B37:4499 (1988).
N. Kobayashi, S. Ikehata, S. Kobayashi, Solid State Commun. 24:67 (1977).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Plenum Press, New York
About this chapter
Cite this chapter
Ferreira da Silva, A. (1990). Application of Gutzwiller’s Correlated Method to the Electronic Effective Mass of Degenerate N-Type Silicon. In: Baeriswyl, D., Bishop, A.R., Carmelo, J. (eds) Applications of Statistical and Field Theory Methods to Condensed Matter. NATO ASI Series, vol 218. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5763-6_27
Download citation
DOI: https://doi.org/10.1007/978-1-4684-5763-6_27
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-5765-0
Online ISBN: 978-1-4684-5763-6
eBook Packages: Springer Book Archive