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Application of Gutzwiller’s Correlated Method to the Electronic Effective Mass of Degenerate N-Type Silicon

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Applications of Statistical and Field Theory Methods to Condensed Matter

Part of the book series: NATO ASI Series ((NSSB,volume 218))

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Abstract

The effective mass m* of Si:P is calculated for donor concentration N at which experimental data are available. Within the framework of Gutzwiller’s variational method for highy correlated system1, we have performed the calculation following a Brinkman-Rice-Berggren-Ferreira da Silva scheme1.Here we have applied a variational treatment which takes into account the many-valley effect of the silicon semiconductor 3. The m* obtained is written as

$$\rm{m^\ast\ =\ \mid 1\ -\ (U/U^2_0)\mid^{-^1}}\ ,$$
(1)

where U is the Hubbard correlation energy and Uo is the average energy without correlation2. The results are given in Table 1. The quantitative agreement between our calculation and experiment4 is certainly satisfactory.

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References

  1. M. C. Gutzwiller, Phys. Rev. 137:A1726 (1965).

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  2. W. F. Brinkman and T. M. Rice, Phys. Rev. B2:4302 (1970); K.-F. Berggren, Phil. Mag. 30:1 (1970); A. Ferreira da Silva, Phys. Rev. B38: 10055 (1988).

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  3. A. Ferreira da Silva, Phys. Rev. Lett. 59:1263 (1987); Phys. Rev. B37:4499 (1988).

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  4. N. Kobayashi, S. Ikehata, S. Kobayashi, Solid State Commun. 24:67 (1977).

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© 1990 Plenum Press, New York

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Ferreira da Silva, A. (1990). Application of Gutzwiller’s Correlated Method to the Electronic Effective Mass of Degenerate N-Type Silicon. In: Baeriswyl, D., Bishop, A.R., Carmelo, J. (eds) Applications of Statistical and Field Theory Methods to Condensed Matter. NATO ASI Series, vol 218. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5763-6_27

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  • DOI: https://doi.org/10.1007/978-1-4684-5763-6_27

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5765-0

  • Online ISBN: 978-1-4684-5763-6

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