On the Impact of Low-Dimensionality in Quantum-Well, Wire, Dot-Semiconductor Lasers

  • Claude Weisbuch
  • Julien Nagle
Part of the NATO ASI Series book series (NSSB, volume 214)


The impact of semiconductor quantum wells on lasing, electrooptic and nonlinear properties is by now well established1. The improved material parameters originate in such various physical phenomena as reduced Density-of-States (DOS), quantum-confined wavefunctions, increased light-matter interaction through room-temperature excitons, square two-dimensional DOS, etc. It is therefore natural to expect that using lower dimensionality structures such as quantum wires or quantum dots one should obtain even better properties. We will restrict our discussion here to quantum wire and quantum dot lasers. Some recent papers have discussed the impact of low dimensional structures in the electro-optic2,3 and nonlinear fields4,5.


Quantum Wire Threshold Current Modal Gain Gain Curve Differential Gain 


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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • Claude Weisbuch
    • 1
  • Julien Nagle
    • 1
  1. 1.Laboratoire Central de RecherchesThomson-CSFOrsay cedexFrance

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