Magnetotransport and Infrared Resonances in Laterally Periodic Nanostructures
Quantum confinement of electrons at a semiconductor interface results in quasi-two-dimensional (2D) electron systems in which the electronic motion is unbound within the interface plane but quantized perpendicularly to it. The unique electronic properties of such 2D electron systems have been widely investigated for more than two decades. Refined lithographic technologies now make it possible to further restrict the electronic motion at semiconductor interfaces in the lateral directions to dimensions in the range around 100 nm which are becoming comparable to the Fermi wavelength of electrons in 2D electron systems in semiconductor heterostructures.1 At low temperatures and for high quality device structures such as GaAs-AlGaAs heterojunctions other relevant electronic length scales such as the elastic mean free path and the phase coherence length can easily exceed 1 μm and thus can be much larger than lateral confinement dimensions W. Under these conditions lateral quantization phenomena have recently become observable in a variety of semiconductor nanostructures using various confinement schemes.
KeywordsGate Voltage Effective Mass Approximation Semiconductor Interface Gate Voltage Versus Inversion Channel
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