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Dry-Etching Damage in Nano-Structures

  • C. D. W. Wilkinson
  • S. P. Beaumont
Part of the NATO ASI Series book series (NSSB, volume 214)

Abstract

In the past few years a great deal of new physics has emerged from the examination of structures made in semi-conducting materials with dimensions on a nano-metric scale -some examples are the observation of Aranhov-Bohm oscillations in a ring, the quantised resistance observed with point contacts and in wires with restrictions and the continuing saga of the photoluminescence from quantum dots and the allied hope of more efficient laser performance.

Keywords

Ideality Factor Gallium Arsenide Indium Phosphide Schottky Junction Silicon Tetrachloride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1).
    R.Cheung, S.Thoms, I.Mclntyre, C.D.W.Wilkinson and S.P.Beaumont,’Passivation of donors in electron beam defined nanostructures after methane/hydrogen reactive ion etching’, J.Vac.Sci.Techno1. 6, 1911, 1988CrossRefGoogle Scholar
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  3. 3).
    M.Watt,C.M.Sotomayor-Torres,R.Cheung,C.D.W.Wilkinson, H.E.G.Arnot and S.P.Beaumont ‘Raman scattering of reactive ion etched GaAs’,J.Mod.Optics, 35, 365, 1988ADSCrossRefGoogle Scholar
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    S.Thoms,S.P.Beaumont,C.D.W.Wilkinson,J.Frost and C.R.Stanley,’ Ultrasmall Device Fabrication using dry etching of GaAs’, Microelectronic Engineering, 5, 249. 1986CrossRefGoogle Scholar
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    R.Cheung,Y.H.Lee,C.M.Knoedler,K.Y.Lee,T.P.Smith III and D.P.Kern, ‘Sidewall damage in n+ GaAs quantum wires from reactive ion etching’, Appl. Phys. Lettrs., 54, 2130, 1989ADSCrossRefGoogle Scholar
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    R.Cheung,A.Birnie,J.N.Chapman and C.D.W.Wilkinson, ‘Evaluation of dry etch damage by direct TEM observation’ to be published in Proc.Microcircuit Engineering 1989 (Cambridge). Google Scholar

Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • C. D. W. Wilkinson
    • 1
  • S. P. Beaumont
    • 1
  1. 1.Department of Electronics and Electrical EngineeringThe UniversityGlasgowScotland, UK

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