Dry-Etching Damage in Nano-Structures

  • C. D. W. Wilkinson
  • S. P. Beaumont
Part of the NATO ASI Series book series (NSSB, volume 214)


In the past few years a great deal of new physics has emerged from the examination of structures made in semi-conducting materials with dimensions on a nano-metric scale -some examples are the observation of Aranhov-Bohm oscillations in a ring, the quantised resistance observed with point contacts and in wires with restrictions and the continuing saga of the photoluminescence from quantum dots and the allied hope of more efficient laser performance.


Ideality Factor Gallium Arsenide Indium Phosphide Schottky Junction Silicon Tetrachloride 
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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • C. D. W. Wilkinson
    • 1
  • S. P. Beaumont
    • 1
  1. 1.Department of Electronics and Electrical EngineeringThe UniversityGlasgowScotland, UK

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