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Lateral Surface Superlattices and Quasi-One-Dimensional Structures in GaAs

  • D. A. Antoniadis
  • K. Ismail
  • Henry I. Smith
Part of the NATO ASI Series book series (NSSB, volume 214)

Abstract

Two types of field-effect transistors on a modulation-doped GaAs/GaA1As heterostructure will be discussed. The first type has a gate electrode that consists of a 0.2 µm-period Ti/Au grid which presents a tunable, two-dimensional periodic potential modulation (lateral surfacesuperlattice, LSSL) to electrons traveling from source to drain. The other type consists of 100 parallel GaAs/GaAlAs channels, each about 40 nm-wide where the electron density is controlled by backgate bias or illumination. Conductance measurements at 4.2 K exhibit clearly a super-lattice effect (i.e., coherent back-diffraction) and provide evidence of sequential resonant tunneling in the LSSL-type device. Similar measurements show clear evidence of quasi-one-dimensional (Q1D) density of states and corresponding electron mobility modulation in the Q1D type devices.

Keywords

Fermi Energy Substrate Bias Gate Bias Negative Differential Resistance AlGaAs Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • D. A. Antoniadis
    • 1
  • K. Ismail
    • 1
  • Henry I. Smith
    • 1
  1. 1.Massachusetts Institute of TechnologyCambridgeUSA

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