Electronic Properties of Doping Quantum Wires

  • Gerrit E. W. Bauer
  • Aart A. van Gorkum
Part of the NATO ASI Series book series (NSSB, volume 214)


Self-consistent calculations of the electronic structure of Doping Quantum Wires (DQW’s) arc presented. DQW’s in a GaAs host arc characterized by many occupied subbands and extended electron distributions with enhanced mobilities and strong effects of magnetic fields. The electrons of a DQW in a Si matrix are found to he in the one-dimensional quantum limit. In spite of the strong confinement of the conduction electrons to the doping line charge, screening effects still render an improved mobility.


Doping Density Impurity Potential Wire Axis Improve Mobility Philips Research Laboratory 
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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • Gerrit E. W. Bauer
    • 1
  • Aart A. van Gorkum
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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