Fabrication of Buried GalnAs/InP Quantum Wires by One-Step Movpe Growth

  • Y. D. Galeuchet
  • P. Roentgen
  • S. Nilsson
  • V. Graf
Part of the NATO ASI Series book series (NSSB, volume 214)


One- or zero-dimensional structures such as quantum well wires (QWWs) or quantum dots (QDs) have received considerable attention in recent years because of their physical properties and their potential device application. Nanostructures with two or three dimensions smaller than the de Broglie wavelength of the electrons and holes have shown interesting phenomena such as for example quantum interference effects in small rings, quenching of the Hall effect in quantum wires or quantization of the ballistic resistance in narrow conducting channels.1 New optical properties such as increased exciton binding energy 2 or strong nonlinear effects 3 are also expected in such structures. Some theoretical calculations have shown that semiconductor lasers with QWWs or QDs as active region should result in ultimate device performance.4


Quantum Wire Scanning Electron Microscope Picture Metalorganic Vapor Phase Epitaxy Selective Area Growth Quantum Interference Effect 
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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • Y. D. Galeuchet
    • 1
  • P. Roentgen
    • 1
  • S. Nilsson
    • 1
  • V. Graf
    • 1
  1. 1.IBM Research DivisionZurich Research LaboratoryRüschlikonSwitzerland

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