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Point and Extended Defects in Semiconductors pp 105–121Cite as

Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon

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Part of the book series: NATO ASI Series ((NSSB,volume 202))

Abstract

Solute segregation at (or near) grain boundaries (GB) of polycrystalline solids has been widely observed and it is recognized1 to be driven by an electrical field (in the case of charged species) or by an elastic-strain field at inherently distorted GB regions, in close similarity with the case of dislocations, where elastic strain is known to produce the so called “Cottrell atmosphere” or a solute impurity cloud2.

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Author information

Authors and Affiliations

  1. Dipartimento di Chimica Fisica ed Elettrochimica, Via Golgi 19, 20133, Milano, Italy

    S. Pizzini, F. Borsani, A. Sandrinelli & D. Narducci

  2. INFN, Sezione di Roma, Piazza A.Moro 2, 00185, Roma, Italy

    F. Allegretti

Authors
  1. S. Pizzini
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  2. F. Borsani
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  3. A. Sandrinelli
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  4. D. Narducci
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  5. F. Allegretti
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Editor information

Editors and Affiliations

  1. Università degli Studi di Milano, Milan, Italy

    G. Benedek

  2. Università degli Studi di Bologna, Bologna, Italy

    A. Cavallini

  3. University of Göttingen, Göttingen, Federal Republic of Germany

    W. Schröter

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© 1989 Plenum Press, New York

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Pizzini, S., Borsani, F., Sandrinelli, A., Narducci, D., Allegretti, F. (1989). Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon. In: Benedek, G., Cavallini, A., Schröter, W. (eds) Point and Extended Defects in Semiconductors. NATO ASI Series, vol 202. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5709-4_8

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  • DOI: https://doi.org/10.1007/978-1-4684-5709-4_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-5711-7

  • Online ISBN: 978-1-4684-5709-4

  • eBook Packages: Springer Book Archive

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