Abstract
Solute segregation at (or near) grain boundaries (GB) of polycrystalline solids has been widely observed and it is recognized1 to be driven by an electrical field (in the case of charged species) or by an elastic-strain field at inherently distorted GB regions, in close similarity with the case of dislocations, where elastic strain is known to produce the so called “Cottrell atmosphere” or a solute impurity cloud2.
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© 1989 Plenum Press, New York
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Pizzini, S., Borsani, F., Sandrinelli, A., Narducci, D., Allegretti, F. (1989). Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon. In: Benedek, G., Cavallini, A., Schröter, W. (eds) Point and Extended Defects in Semiconductors. NATO ASI Series, vol 202. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5709-4_8
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DOI: https://doi.org/10.1007/978-1-4684-5709-4_8
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