Abstract
It is well established that the dependence of the dislocation velocity on applied stress a and temperature T in Ge and Si can be described by the equation1–4
This behaviour can be explained under the assumption that the dislocations move by overcoming a high primary Peierls potential (HKPF) by kink pair formation (KPF) and the secondary Peierls barriers (HKM) by single kink migration (KM) along the dislocation line.
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© 1989 Plenum Press, New York
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Haasen, P., Jendrich, U., Laszig, D. (1989). Internal Friction Due to Defects in Semiconductors. In: Benedek, G., Cavallini, A., Schröter, W. (eds) Point and Extended Defects in Semiconductors. NATO ASI Series, vol 202. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5709-4_5
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