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Changes of Electrical Properties of Silicon Caused by Plastic Deformation

  • Helmut Alexander
Part of the NATO ASI Series book series (NSSB, volume 202)

Abstract

When the interest in the electrical properties of dislocations in semiconductors started some 30 years ago plastic deformation was just a technique to introduce a dislocation density into the crystal sufficient high for producing measurable effects.

Keywords

Electron Paramagnetic Resonance Point Defect Electron Paramagnetic Resonance Spectrum Screw Dislocation Electron Paramagnetic Resonance Signal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Helmut Alexander
    • 1
  1. 1.Abteilung für Metallphysik im II. Physikalischen InstitutUniversität KölnKöln 41Deutschland

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