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Point Defects in GaAs

  • E. R. Weber
  • K. Khachaturyan
  • M. Hoinkis
  • M. Kaminska
Part of the NATO ASI Series book series (NSSB, volume 202)

Abstract

In the last five years, rapid progress has been made in the identification of electrically active defects in GaAs and related compounds. Part of this progress is due to the application of spectroscopic experimental techniques sensitive to defect symmetries, such as electron paramagnetic resonance, which has been successfully used to identify a large number of defects in silicon. State-of-the art calculations of low-symmetry defect configurations have also been instrumental in this progress, demonstrating that metastability of defects in covalent crystals can be due to isolated point defects which undergo a symmetry-breaking lattice relaxation. In this paper we discuss the microscopic identity and new results concerning the electronic properties of some of the most important defects in GaAs and related compounds.

Keywords

Electron Paramagnetic Resonance Donor Level Lattice Relaxation Shallow Donor Deep Donor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • E. R. Weber
    • 1
    • 2
  • K. Khachaturyan
    • 1
    • 2
  • M. Hoinkis
    • 1
    • 2
  • M. Kaminska
    • 1
    • 2
  1. 1.Department of Materials Science and Mineral EngineeringUniversity of CaliforniaBerkeleyUSA
  2. 2.Center for Advanced MaterialsLawrence Berkeley LaboratoryBerkeleyUSA

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