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High-Resolution Electron Microscopy of Twin-Free (111) CdTe Layers Grown on Vicinal (001) GaAs Surfaces

  • G. Feuillet
  • Y. Gobil
  • J. Cibert
  • S. Tatarenko
  • K. Saminadayar
Part of the NATO ASI Series book series (NSSB, volume 202)

Abstract

We report here on a High-Resolution Transmission Electron Microscopy investigation of (111) epitaxial CdTe layers on (001) GaAs substrates where twinning is impeded by a suitable misorientation of the substrate surface. It is also found that the layer (111) growth planes are slightly tilted with respect to the (001) GaAs planes. This tilt is explained in terms of preferential nucleation at surface steps and of mismatch accomodation on the vicinal interface.

Keywords

GaAs Substrate Misfit Dislocation CdTe Layer Growth Plane Surface Step 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • G. Feuillet
    • 1
  • Y. Gobil
    • 2
  • J. Cibert
    • 2
  • S. Tatarenko
    • 2
  • K. Saminadayar
    • 1
  1. 1.CEA/CENG, DRF/SPh/PSCCNRSGrenoble CédexFrance
  2. 2.Lab. de Spectrométrie PhysiqueCNRSGrenoble CédexFrance

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