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Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy

  • A. Ourmazd
Part of the NATO ASI Series book series (NSSB, volume 202)

Abstract

Modern growth techniques allow the fabrication of multi-layered systems, with electronic properties that can be turned to the particular application in mind. These systems necessarily contain many interfaces, whose structure can profoundly influence their electronic characteristics. Since the individual layers are sometimes only a few lattice parameters thick, a full characterization of these interfaces requires atomic resolution both spatially and chemically.

Keywords

High Resolution Transmission Electron Microscopy High Resolution Transmission Electron Microscopy Interfacial Roughness Interfacial Oxide Atomic Column 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. Ourmazd
    • 1
  1. 1.AT&T Bell LaboratoriesHolmdelUSA

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