Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy

  • A. Ourmazd
Part of the NATO ASI Series book series (NSSB, volume 202)


Modern growth techniques allow the fabrication of multi-layered systems, with electronic properties that can be turned to the particular application in mind. These systems necessarily contain many interfaces, whose structure can profoundly influence their electronic characteristics. Since the individual layers are sometimes only a few lattice parameters thick, a full characterization of these interfaces requires atomic resolution both spatially and chemically.


High Resolution Transmission Electron Microscopy High Resolution Transmission Electron Microscopy Interfacial Roughness Interfacial Oxide Atomic Column 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    For a detailed discussion of HRTEM, see e.g.: J. C. H. Spence, Experimental High Resolution Transmission Electron Microscopy (Oxford University Press, New York, 1980).Google Scholar
  2. 2.
    A. Ourmazd, K. Ahlborn, K. Ibeh, and T. Honda; Appl Phys Lett 47, 685 (1985).ADSCrossRefGoogle Scholar
  3. 3.
    S. T. Pantelides and M. Long, in Physics of SiO 2 and its interfaces, ed. S. T. Pantelides (Pergamon Press, New York, 1978), p. 339.Google Scholar
  4. 4.
    See, e.g., S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy and O. L. Krivanek, Phys Rev B 32, 8171 (1985).ADSCrossRefGoogle Scholar
  5. 5.
    A. Ourmazd, D. W. Taylor, J. A. Rentschler and J. Bevk, Phys Rev Lett, 59, 213 (1987).ADSCrossRefGoogle Scholar
  6. 6.
    A. Ourmazd, J. A. Rentschler and D. W. Taylor, Phys Rev Lett, 57, 3073 (1986).ADSCrossRefGoogle Scholar
  7. 7.
    A. Ourmazd, W. T. Tsang, J. A. Rentschler and D. W. Taylor, Appl Phys Lett, 50, 1417 (1987).ADSCrossRefGoogle Scholar
  8. 8.
    A. Ourmazd, D. W. Taylor, J. Cunningham, and C. W. Tu, to be published.Google Scholar
  9. 9.
    Y. O. Kim, A. Ourmazd, R. D. Feldman, J. A. Rentschler, D. W. Taylor, and R. F. Austin, to be published.Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. Ourmazd
    • 1
  1. 1.AT&T Bell LaboratoriesHolmdelUSA

Personalised recommendations