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The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds

  • B. Cockayne
  • P. J. Wright
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

The potential device interest in the wide band gap II–VI materials, based principally on compounds of the group II elements (Zn, Cd) with the group VI elements (O, S, Se, Te) has been recognised for a long time.1,2 These materials are known to have band gaps which are compatible with emission in the visible region of the electromagnetic spectrum and to exhibit non-linear optical effects.3 These properties are currently being investigated in applications such as light emitting devices, optical wave guides and optical switches.

Keywords

Hydrogen Sulphide Solid Composition ZnSe Layer Hydrogen Selenide Dimethyl Selenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • B. Cockayne
    • 1
  • P. J. Wright
    • 1
  1. 1.Royal Signals and Radar EstablishmentMalvern, WorcsUK

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