Prospects for II-VI Heterojunction Light Emitting Diodes

  • J. O. McCaldin
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

The difficulty of making pn junctions by conventional processing in the wider band-gap II–VIs has been attacked over the years in several ways. One way, which is the subject of this paper, is to join a p-type II–VI to an n-type II–VI to form a heterojunction (HJ). The HJ approach has been tried for over 20 years and has been quite successful in making pn junctions in these materials.

Keywords

Sulfide Recombination GaAs ZnSe Wurtzite 

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • J. O. McCaldin
    • 1
  1. 1.T. J. Watson, Sr., Laboratory of Applied PhysicsCalifornia Institute of TechnologyPasadenaUSA

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